James Kolodzey
James Kolodzey
Verified email at udel.edu
Title
Cited by
Cited by
Year
Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon
J Kolodzey, EA Chowdhury, TN Adam, G Qui, I Rau, JO Olowolafe, ...
IEEE Transactions on Electron Devices 47 (1), 121-128, 2000
2442000
Photothermal and photoconductive determination of surface and bulk defect densities in amorphous silicon films
ZE Smith, V Chu, K Shepard, S Aljishi, D Slobodin, J Kolodzey, S Wagner, ...
Applied physics letters 50 (21), 1521-1523, 1987
2031987
Room temperature operation of epitaxially grown resonant interband tunneling diodes
SL Rommel, TE Dillon, MW Dashiell, H Feng, J Kolodzey, PR Berger, ...
Applied Physics Letters 73 (15), 2191-2193, 1998
1991998
Growth of germanium‐carbon alloys on silicon substrates by molecular beam epitaxy
J Kolodzey, PA O’neil, S Zhang, BA Orner, K Roe, KM Unruh, CP Swann, ...
Applied physics letters 67 (13), 1865-1867, 1995
1191995
Thermal conductivity reduction in GaAs-AlAs distributed Bragg reflectors
J Piprek, T Troger, B Schroter, J Kolodzey, CS Ih
IEEE Photonics Technology Letters 10 (1), 81-83, 1998
1021998
Fiber optics light switch
JS Kolodzey, GR Stilwell Jr, EC Uberbacher
US Patent 4,245,886, 1981
1001981
Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy
JP Gupta, N Bhargava, S Kim, T Adam, J Kolodzey
Applied physics letters 102 (25), 251117, 2013
982013
The electrical properties of MIS capacitors with AlN gate dielectrics
T Adam, J Kolodzey, CP Swann, MW Tsao, JF Rabolt
Applied Surface Science 175, 428-435, 2001
922001
Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy
N Bhargava, M Coppinger, J Prakash Gupta, L Wielunski, J Kolodzey
Applied Physics Letters 103 (4), 041908, 2013
872013
Terahertz electroluminescence from boron-doped silicon devices
TN Adam, RT Troeger, SK Ray, PC Lv, J Kolodzey
Applied physics letters 83 (9), 1713-1715, 2003
842003
Carbon incorporation in alloys grown by molecular beam epitaxy using a single silicon–graphite source
MW Dashiell, LV Kulik, D Hits, J Kolodzey, G Watson
Applied physics letters 72 (7), 833-835, 1998
751998
Electroluminescence at 7 terahertz from phosphorus donors in silicon
PC Lv, RT Troeger, TN Adam, S Kim, J Kolodzey, IN Yassievich, ...
Applied physics letters 85 (1), 22-24, 2004
732004
Semiconductor device with controlled negative differential resistance characteristic
JP Leburton, J Kolodzey
US Patent 5,021,841, 1991
731991
Silicon carbide and silicon carbide: germanium heterostructure bipolar transistors
KJ Roe, G Katulka, J Kolodzey, SE Saddow, D Jacobson
Applied Physics Letters 78 (14), 2073-2075, 2001
692001
Initial stages of trapping in a-Si: H observed by femtosecond spectroscopy
PM Fauchet, D Hulin, A Migus, A Antonetti, J Kolodzey, S Wagner
Physical review letters 57 (19), 2438, 1986
681986
Tunnel barrier enhanced voltage signal generated by magnetization precession of a single ferromagnetic layer
T Moriyama, R Cao, X Fan, G Xuan, BK Nikolić, Y Tserkovnyak, ...
Physical review letters 100 (6), 067602, 2008
672008
Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing
MW Dashiell, RT Troeger, SL Rommel, TN Adam, PR Berger, C Guedj, ...
IEEE Transactions on Electron Devices 47 (9), 1707-1714, 2000
662000
Optical and electronic properties of SiGeC alloys grown on Si substrates
J Kolodzey, PR Berger, BA Orner, D Hits, F Chen, A Khan, X Shao, ...
Journal of crystal growth 157 (1-4), 386-391, 1995
661995
Properties of a‐Si,Ge:H,F alloys prepared by rf glow discharge in an ultrahigh vacuum reactor
J Kolodzey, S Aljishi, R Schwarz, D Slobodin, S Wagner
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 4 (6 …, 1986
661986
Thermally oxidized AlN thin films for device insulators
EA Chowdhury, J Kolodzey, JO Olowolafe, G Qiu, G Katulka, D Hits, ...
Applied physics letters 70 (20), 2732-2734, 1997
541997
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Articles 1–20