James Kolodzey
James Kolodzey
Verified email at udel.edu
Cited by
Cited by
Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon
J Kolodzey, EA Chowdhury, TN Adam, G Qui, I Rau, JO Olowolafe, ...
IEEE Transactions on Electron Devices 47 (1), 121-128, 2000
Photothermal and photoconductive determination of surface and bulk defect densities in amorphous silicon films
ZE Smith, V Chu, K Shepard, S Aljishi, D Slobodin, J Kolodzey, S Wagner, ...
Applied physics letters 50 (21), 1521-1523, 1987
Room temperature operation of epitaxially grown resonant interband tunneling diodes
SL Rommel, TE Dillon, MW Dashiell, H Feng, J Kolodzey, PR Berger, ...
Applied Physics Letters 73 (15), 2191-2193, 1998
Growth of germanium‐carbon alloys on silicon substrates by molecular beam epitaxy
J Kolodzey, PA O’neil, S Zhang, BA Orner, K Roe, KM Unruh, CP Swann, ...
Applied physics letters 67 (13), 1865-1867, 1995
Thermal conductivity reduction in GaAs-AlAs distributed Bragg reflectors
J Piprek, T Troger, B Schroter, J Kolodzey, CS Ih
IEEE Photonics Technology Letters 10 (1), 81-83, 1998
Fiber optics light switch
JS Kolodzey, GR Stilwell Jr, EC Uberbacher
US Patent 4,245,886, 1981
Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy
JP Gupta, N Bhargava, S Kim, T Adam, J Kolodzey
Applied physics letters 102 (25), 251117, 2013
The electrical properties of MIS capacitors with AlN gate dielectrics
T Adam, J Kolodzey, CP Swann, MW Tsao, JF Rabolt
Applied Surface Science 175, 428-435, 2001
Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy
N Bhargava, M Coppinger, J Prakash Gupta, L Wielunski, J Kolodzey
Applied Physics Letters 103 (4), 041908, 2013
Terahertz electroluminescence from boron-doped silicon devices
TN Adam, RT Troeger, SK Ray, PC Lv, J Kolodzey
Applied physics letters 83 (9), 1713-1715, 2003
Carbon incorporation in alloys grown by molecular beam epitaxy using a single silicon–graphite source
MW Dashiell, LV Kulik, D Hits, J Kolodzey, G Watson
Applied physics letters 72 (7), 833-835, 1998
Electroluminescence at 7 terahertz from phosphorus donors in silicon
PC Lv, RT Troeger, TN Adam, S Kim, J Kolodzey, IN Yassievich, ...
Applied physics letters 85 (1), 22-24, 2004
Semiconductor device with controlled negative differential resistance characteristic
JP Leburton, J Kolodzey
US Patent 5,021,841, 1991
Silicon carbide and silicon carbide: germanium heterostructure bipolar transistors
KJ Roe, G Katulka, J Kolodzey, SE Saddow, D Jacobson
Applied Physics Letters 78 (14), 2073-2075, 2001
Initial stages of trapping in a-Si: H observed by femtosecond spectroscopy
PM Fauchet, D Hulin, A Migus, A Antonetti, J Kolodzey, S Wagner
Physical review letters 57 (19), 2438, 1986
Tunnel barrier enhanced voltage signal generated by magnetization precession of a single ferromagnetic layer
T Moriyama, R Cao, X Fan, G Xuan, BK Nikolić, Y Tserkovnyak, ...
Physical review letters 100 (6), 067602, 2008
Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing
MW Dashiell, RT Troeger, SL Rommel, TN Adam, PR Berger, C Guedj, ...
IEEE Transactions on Electron Devices 47 (9), 1707-1714, 2000
Optical and electronic properties of SiGeC alloys grown on Si substrates
J Kolodzey, PR Berger, BA Orner, D Hits, F Chen, A Khan, X Shao, ...
Journal of crystal growth 157 (1-4), 386-391, 1995
Properties of a‐Si,Ge:H,F alloys prepared by rf glow discharge in an ultrahigh vacuum reactor
J Kolodzey, S Aljishi, R Schwarz, D Slobodin, S Wagner
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 4 (6 …, 1986
Thermally oxidized AlN thin films for device insulators
EA Chowdhury, J Kolodzey, JO Olowolafe, G Qiu, G Katulka, D Hits, ...
Applied physics letters 70 (20), 2732-2734, 1997
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