Jean-Daniel Ganiere
Jean-Daniel Ganiere
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Engineering the spatial confinement of exciton polaritons in semiconductors
RI Kaitouni, O El Daïf, A Baas, M Richard, T Paraiso, P Lugan, T Guillet, ...
Physical Review B 74 (15), 155311, 2006
Probing carrier dynamics in nanostructures by picosecond cathodoluminescence
M Merano, S Sonderegger, A Crottini, S Collin, P Renucci, E Pelucchi, ...
Nature 438 (7067), 479-482, 2005
Charged exciton dynamics in GaAs quantum wells
G Finkelstein, V Umansky, I Bar-Joseph, V Ciulin, S Haacke, JD Ganiere, ...
Physical Review B 58 (19), 12637, 1998
High spatial resolution picosecond cathodoluminescence of InGaN quantum wells
S Sonderegger, E Feltin, M Merano, A Crottini, JF Carlin, R Sachot, ...
Applied physics letters 89 (23), 232109, 2006
Exciton localization on basal stacking faults in -plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy
P Corfdir, P Lefebvre, J Levrat, A Dussaigne, JD Ganière, D Martin, ...
Journal of Applied Physics 105 (4), 043102, 2009
Radiative behavior of negatively charged excitons in CdTe-based quantum wells: A spectral and temporal analysis
V Ciulin, P Kossacki, S Haacke, JD Ganiere, B Deveaud, A Esser, ...
Physical Review B 62 (24), R16310, 2000
On the size dependence of the optical absorption due to small metal particles
JD Ganière, R Rechsteiner, MA Smithard
Solid State Communications 16 (1), 113-115, 1975
Role of point defects in the silicon diffusion in GaAs and Al0.3Ga0.7As and in the related superlattice disordering
L Pavesi, NH Ky, JD Ganiere, FK Reinhart, N Baba‐Ali, I Harrison, B Tuck, ...
Journal of applied physics 71 (5), 2225-2237, 1992
Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates
P Corfdir, P Lefebvre, J Ristić, P Valvin, E Calleja, A Trampert, JD Ganière, ...
Journal of Applied Physics 105 (1), 013113, 2009
A model for the Zn diffusion in GaAs by a photoluminescence study
NH Ky, L Pavesi, D Araujo, JD Ganiere, FK Reinhart
Journal of applied physics 69 (11), 7585-7593, 1991
Fluorescence yield and lifetime of isolated polydiacetylene chains: Evidence for a one-dimensional exciton band in a conjugated polymer
R Lécuiller, J Berréhar, JD Ganiere, C Lapersonne-Meyer, P Lavallard, ...
Physical Review B 66 (12), 125205, 2002
Characterization of GaAs/(GaAs)n(AlAs)m surface‐emitting laser structures through reflectivity and high‐resolution electron microscopy measurements
J Faist, JD Ganière, P Buffat, S Sampson, FK Reinhart
Journal of applied physics 66 (3), 1023-1032, 1989
Ordered magnetic phase in Cd1− xMnxTe/Cd1− y− zMgyZnzTe: N heterostructures: magnetooptical studies
P Kossacki, D Ferrand, A Arnoult, J Cibert, S Tatarenko, A Wasiela, ...
Physica E: Low-dimensional Systems and Nanostructures 6 (1-4), 709-712, 2000
Quantitative analysis of electron‐beam‐induced current profiles across pn junctions in GaAs/Al0.4Ga0.6As heterostructures
JM Bonard, JD Ganière
Journal of applied physics 79 (9), 6987-6994, 1996
Epitaxial growth of Si1−xyGexCy alloy layers on (100) Si by rapid thermal chemical vapor deposition using methylsilane
J Mi, P Warren, M Gailhanou, JD Ganière, M Dutoit, PH Jouneau, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996
Exciton drift in semiconductors under uniform strain gradients: Application to bent ZnO microwires
X Fu, G Jacopin, M Shahmohammadi, R Liu, M Benameur, JD Ganiere, ...
ACS nano 8 (4), 3412-3420, 2014
Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around m
A Markus, A Fiore, JD Ganiere, U Oesterle, JX Chen, B Deveaud, ...
Applied physics letters 80 (6), 911-913, 2002
Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in -plane GaN
P Corfdir, J Ristić, P Lefebvre, T Zhu, D Martin, A Dussaigne, JD Ganière, ...
Applied Physics Letters 94 (20), 201115, 2009
Published (Erschienen)
D Abou-Ras, CT Koch, V Küstner, PA Van Aken, U Jahn, MA Contreras, ...
Thin Solid Films 517, 2545-2549, 2009
Density dependence of carrier-carrier-induced intersubband scattering in quantum wells
M Hartig, JD Ganiere, PE Selbmann, B Deveaud, L Rota
Physical Review B 60 (3), 1500, 1999
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