Jean-Daniel Ganiere

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Benoit DeveaudVice Provost Research Ecole Polytechnique PalaiseauAdresse e-mail validée de polytechnique.edu
Pierre CorfdirABB Corporate ResearchAdresse e-mail validée de ch.abb.com
Nicolas GrandjeanInstitute of Physics, EPFLAdresse e-mail validée de epfl.ch
Samuel SondereggerAttolightAdresse e-mail validée de attolight.com
Pierre LefebvreDirecteur de Recherche CNRS. Physics. Laboratoire Charles Coulomb (L2C), Université de MontpellierAdresse e-mail validée de umontpellier.fr
Piotr KossackiInstitute of Experimental Physics, Faculty of Physics, University of WarsawAdresse e-mail validée de fuw.edu.pl
Stefan HaackeUniversité de Strasbourg - IPCMSAdresse e-mail validée de unistra.fr
Lucia SORBANEST, Istituto Nanoscienze-CNR and Scuola Normale SuperioreAdresse e-mail validée de sns.it
Lorenzo PavesiProfessor of Physics, University of TrentoAdresse e-mail validée de unitn.it
Michele MeranoUniversità degli studi di PadovaAdresse e-mail validée de unipd.it
Eric FeltinnovaganAdresse e-mail validée de novagan.com
Gwénolé JacopinInstitut Néel - CNRS, Univ. Grenoble Alpes, FranceAdresse e-mail validée de epfl.ch
Raphaël ButtéSenior scientist, Institute of Physics, EPFL, SwitzerlandAdresse e-mail validée de epfl.ch
Stéphane CollinCentre de Nanosciences et de Nanotechnologies (C2N, CNRS, Université Paris-Saclay)Adresse e-mail validée de c2n.upsaclay.fr
Silvia RubiniCNRAdresse e-mail validée de iom.cnr.it
Georg RossbachOSRAM Opto Semiconductors GmbH, Regensburg, GermanyAdresse e-mail validée de osram-os.com
Jerome FaistETH ZurichAdresse e-mail validée de phys.ethz.ch
Pelucchi EmanueleTyndall National Institute, University College CorkAdresse e-mail validée de tyndall.ie
Henryk TeisseyreInstitute of Physics of the Polish Academy of SciencesAdresse e-mail validée de ifpan.edu.pl
Stefan HeunNEST, Istituto Nanoscienze-CNR and Scuola Normale SuperioreAdresse e-mail validée de nano.cnr.it

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Jean-Daniel Ganiere

MER, EPFL

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cathodoluminescence


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Engineering the spatial confinement of exciton polaritons in semiconductors RI Kaitouni, O El Daïf, A Baas, M Richard, T Paraiso, P Lugan, T Guillet, ... Physical Review B 74 (15), 155311, 2006	203	2006
Probing carrier dynamics in nanostructures by picosecond cathodoluminescence M Merano, S Sonderegger, A Crottini, S Collin, P Renucci, E Pelucchi, ... Nature 438 (7067), 479-482, 2005	194	2005
High spatial resolution picosecond cathodoluminescence of InGaN quantum wells S Sonderegger, E Feltin, M Merano, A Crottini, JF Carlin, R Sachot, ... Applied Physics Letters 89 (23), 2006	107	2006
Charged exciton dynamics in GaAs quantum wells G Finkelstein, V Umansky, I Bar-Joseph, V Ciulin, S Haacke, JD Ganiere, ... Physical Review B 58 (19), 12637, 1998	104	1998
Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy P Corfdir, P Lefebvre, J Levrat, A Dussaigne, JD Ganière, D Martin, ... Journal of Applied Physics 105 (4), 2009	94	2009
Role of point defects in the silicon diffusion in GaAs and Al_0.3Ga_0.7As and in the related superlattice disordering L Pavesi, NH Ky, JD Ganiere, FK Reinhart, N Baba‐Ali, I Harrison, B Tuck, ... Journal of applied physics 71 (5), 2225-2237, 1992	91	1992
Radiative behavior of negatively charged excitons in CdTe-based quantum wells: A spectral and temporal analysis V Ciulin, P Kossacki, S Haacke, JD Ganiere, B Deveaud, A Esser, ... Physical Review B 62 (24), R16310, 2000	86	2000
On the size dependence of the optical absorption due to small metal particles JD Ganière, R Rechsteiner, MA Smithard Solid State Communications 16 (1), 113-115, 1975	86	1975
Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates P Corfdir, P Lefebvre, J Ristić, P Valvin, E Calleja, A Trampert, JD Ganière, ... Journal of Applied Physics 105 (1), 2009	81	2009
A model for the Zn diffusion in GaAs by a photoluminescence study NH Ky, L Pavesi, D Araujo, JD Ganiere, FK Reinhart Journal of applied physics 69 (11), 7585-7593, 1991	76	1991
Exciton drift in semiconductors under uniform strain gradients: Application to bent ZnO microwires X Fu, G Jacopin, M Shahmohammadi, R Liu, M Benameur, JD Ganiere, ... ACS nano 8 (4), 3412-3420, 2014	75	2014
Fluorescence yield and lifetime of isolated polydiacetylene chains: Evidence for a one-dimensional exciton band in a conjugated polymer R Lécuiller, J Berréhar, JD Ganiere, C Lapersonne-Meyer, P Lavallard, ... Physical Review B 66 (12), 125205, 2002	74	2002
Quantitative analysis of electron‐beam‐induced current profiles across p–n junctions in GaAs/Al_0.4Ga_0.6As heterostructures JM Bonard, JD Ganière Journal of Applied Physics 79 (9), 6987-6994, 1996	65	1996
Ordered magnetic phase in Cd1− xMnxTe/Cd1− y− zMgyZnzTe: N heterostructures: magnetooptical studies P Kossacki, D Ferrand, A Arnoult, J Cibert, S Tatarenko, A Wasiela, ... Physica E: Low-dimensional Systems and Nanostructures 6 (1-4), 709-712, 2000	64	2000
Characterization of GaAs/(GaAs)_n(AlAs)_m surface‐emitting laser structures through reflectivity and high‐resolution electron microscopy measurements J Faist, JD Ganiere, P Buffat, S Sampson, FK Reinhart Journal of applied physics 66 (3), 1023-1032, 1989	64	1989
Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN P Corfdir, J Ristić, P Lefebvre, T Zhu, D Martin, A Dussaigne, JD Ganière, ... Applied Physics Letters 94 (20), 2009	63	2009
High-temperature Mott transition in wide-band-gap semiconductor quantum wells G Rossbach, J Levrat, G Jacopin, M Shahmohammadi, JF Carlin, ... Physical Review B 90 (20), 201308, 2014	60	2014
Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around m A Markus, A Fiore, JD Ganiere, U Oesterle, JX Chen, B Deveaud, ... Applied physics letters 80 (6), 911-913, 2002	57	2002
Epitaxial growth of Si_1−x−yGe_xC_y alloy layers on (100) Si by rapid thermal chemical vapor deposition using methylsilane J Mi, P Warren, M Gailhanou, JD Ganière, M Dutoit, PH Jouneau, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996	57	1996
High brightness picosecond electron gun M Merano, S Collin, P Renucci, M Gatri, S Sonderegger, A Crottini, ... Review of scientific instruments 76 (8), 2005	50	2005

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