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Chi-Kang Li
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Study on the current spreading effect and light extraction enhancement of vertical GaN/InGaN LEDs
CK Li, YR Wu
IEEE transactions on electron devices 59 (2), 400-407, 2011
1352011
Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes
CK Li, M Piccardo, LS Lu, S Mayboroda, L Martinelli, J Peretti, JS Speck, ...
Physical Review B 95 (14), 144206, 2017
1332017
Localization landscape theory of disorder in semiconductors. I. Theory and modeling
M Filoche, M Piccardo, YR Wu, CK Li, C Weisbuch, S Mayboroda
Physical Review B 95 (14), 144204, 2017
1172017
Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers
M Piccardo, CK Li, YR Wu, JS Speck, B Bonef, RM Farrell, M Filoche, ...
Physical Review B 95 (14), 144205, 2017
1002017
Characteristics of large‐scale nanohole arrays for thin‐silicon photovoltaics
TG Chen, P Yu, SW Chen, FY Chang, BY Huang, YC Cheng, JC Hsiao, ...
Progress in Photovoltaics: Research and Applications 22 (4), 452-461, 2014
762014
3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits
CK Li, CK Wu, CC Hsu, LS Lu, H Li, TC Lu, YR Wu
AIP Advances 6 (5), 2016
522016
Thin 3D multiplication regions in plasmonically enhanced nanopillar avalanche detectors
P Senanayake, CH Hung, A Farrell, DA Ramirez, J Shapiro, CK Li, YR Wu, ...
Nano letters 12 (12), 6448-6452, 2012
432012
Electrical properties of modulation-doped rf-sputtered polycrystalline MgZnO/ZnO heterostructures
HA Chin, IC Cheng, CK Li, YR Wu, JZ Chen, WS Lu, WL Lee
Journal of Physics D: Applied Physics 44 (45), 455101, 2011
372011
Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodes
CK Li, HC Yang, TC Hsu, YJ Shen, AS Liu, YR Wu
Journal of Applied Physics 113 (18), 2013
352013
Percolation transport study in nitride based LED by considering the random alloy fluctuation
CK Wu, CK Li, YR Wu
Journal of Computational Electronics 14, 416-424, 2015
312015
Study on the optimization for current spreading effect of lateral GaN/InGaN LEDs
CK Li, M Rosmeulen, E Simoen, YR Wu
IEEE Transactions on Electron Devices 61 (2), 511-517, 2013
282013
A review of non linear piezoelectricity in semiconductors
MA Migliorato, J Pal, R Garg, G Tse, HYS Al-Zahrani, U Monteverde, ...
AIP Conference Proceedings 1590 (1), 32-41, 2014
272014
Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management
J Pal, MA Migliorato, CK Li, YR Wu, BG Crutchley, IP Marko, SJ Sweeney
Journal of Applied Physics 114 (7), 2013
232013
Optical properties of the partially strain relaxed InGaN/GaN light-emitting diodes induced by p-type GaN surface texturing
YH Sun, YW Cheng, SC Wang, YY Huang, CH Chang, SC Yang, LY Chen, ...
IEEE Electron Device Letters 32 (2), 182-184, 2010
232010
Three dimensional characterization of GaN-based light emitting diode grown on patterned sapphire substrate by confocal Raman and photoluminescence spectromicroscopy
H Li, HY Cheng, WL Chen, YH Huang, CK Li, CY Chang, YR Wu, TC Lu, ...
Scientific reports 7 (1), 45519, 2017
212017
Analysis of the PEDOT: PSS/Si nanowire hybrid solar cell with a tail state model
KY Ho, CK Li, HJ Syu, Y Lai, CF Lin, YR Wu
Journal of Applied Physics 120 (21), 2016
202016
Transport properties of gallium nitride nanowire metal-oxide-semiconductor transistor
JW Yu, CK Li, CY Chen, YR Wu, LJ Chou, LH Peng
Applied Physics Letters 99 (15), 2011
162011
Scaling performance of Ga2O3/GaN nanowire field effect transistor
CK Li, PC Yeh, JW Yu, LH Peng, YR Wu
Journal of Applied Physics 114 (16), 2013
132013
On the efficiency decrease of the GaN light-emitting nanorod arrays
LY Chen, CK Li, JY Tan, LC Huang, YR Wu, JJ Huang
IEEE Journal of Quantum Electronics 49 (2), 224-231, 2013
132013
Silicon-film-related random telegraph noise in UTBOX silicon-on-insulator nMOSFETs
W Fang, E Simoen, L Chikang, M Aoulaiche, J Luo, C Zhao, C Claeys
Journal of Semiconductors 36 (9), 094005, 2015
72015
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