Suivre
Dr. Bai Sun
Titre
Citée par
Citée par
Année
Synaptic devices based neuromorphic computing applications in artificial intelligence
B Sun, T Guo, G Zhou, S Ranjan, Y Jiao, L Wei, YN Zhou, YA Wu
Materials Today Physics 18, 100393, 2021
1672021
Coexistence of Negative Differential Resistance and Resistive Switching Memory at Room Temperature in TiOx Modulated by Moisture
G Zhou, S Duan, P Li, B Sun, B Wu, Y Yao, X Yang, J Han, J Wu, G Wang, ...
Advanced Electronic Materials 4 (4), 1700567, 2018
1552018
A unified capacitive-coupled memristive model for the nonpinched current–voltage hysteresis loop
B Sun, Y Chen, M Xiao, G Zhou, S Ranjan, W Hou, X Zhu, Y Zhao, ...
Nano letters 19 (9), 6461-6465, 2019
1482019
An organic nonvolatile resistive switching memory device fabricated with natural pectin from fruit peel
B Sun, X Zhang, G Zhou, P Li, Y Zhang, H Wang, Y Xia, Y Zhao
Organic Electronics 42, 181-186, 2017
1322017
Fabrication of CeO2 nanoparticle-modified silk for UV protection and antibacterial applications
Z Lu, C Mao, M Meng, S Liu, Y Tian, L Yu, B Sun, CM Li
Journal of colloid and interface science 435, 8-14, 2014
1252014
Resistive switching memory integrated with amorphous carbon-based nanogenerators for self-powered device
G Zhou, Z Ren, L Wang, J Wu, B Sun, A Zhou, G Zhang, S Zheng, S Duan, ...
Nano Energy 63, 103793, 2019
1232019
Artificial and wearable albumen protein memristor arrays with integrated memory logic gate functionality
G Zhou, Z Ren, L Wang, B Sun, S Duan, Q Song
Materials Horizons 6 (9), 1877-1882, 2019
1192019
Capacitive effect: An original of the resistive switching memory
G Zhou, Z Ren, B Sun, J Wu, Z Zou, S Zheng, L Wang, S Duan, Q Song
Nano Energy 68, 104386, 2020
1142020
Biomemristors as the next generation bioelectronics
B Sun, G Zhou, T Guo, YN Zhou, YA Wu
Nano Energy 75, 104938, 2020
1122020
Volatile and nonvolatile memristive devices for neuromorphic computing
G Zhou, Z Wang, B Sun, F Zhou, L Sun, H Zhao, X Hu, X Peng, J Yan, ...
Advanced Electronic Materials 8 (7), 2101127, 2022
1112022
Enhanced resistive switching effect upon illumination in self-assembled NiWO4 nano-nests
B Sun, W Zhao, L Wei, H Li, P Chen
Chemical Communications 50 (86), 13142-13145, 2014
1092014
Negative Photoconductance Effect: An Extension Function of the TiOx‐Based Memristor
G Zhou, B Sun, X Hu, L Sun, Z Zou, B Xiao, W Qiu, B Wu, J Li, J Han, ...
Advanced Science 8 (13), 2003765, 2021
1062021
Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires
G Zhou, B Sun, Y Yao, H Zhang, A Zhou, K Alameh, B Ding, Q Song
Applied Physics Letters 109 (14), 2016
982016
The DNA strand assisted conductive filament mechanism for improved resistive switching memory
B Sun, L Wei, H Li, X Jia, J Wu, P Chen
Journal of Materials Chemistry C 3 (46), 12149-12155, 2015
892015
ABO 3 multiferroic perovskite materials for memristive memory and neuromorphic computing
B Sun, G Zhou, L Sun, H Zhao, Y Chen, F Yang, Y Zhao, Q Song
Nanoscale Horizons 6 (12), 939-970, 2021
882021
Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory
G Zhou, X Yang, L Xiao, B Sun, A Zhou
Applied Physics Letters 114 (16), 2019
872019
From dead leaves to sustainable organic resistive switching memory
B Sun, S Zhu, S Mao, P Zheng, Y Xia, F Yang, M Lei, Y Zhao
Journal of colloid and interface science 513, 774-778, 2018
832018
Photo-induced negative differential resistance in a resistive switching memory device based on BiFeO3/ZnO heterojunctions
P Zheng, B Sun, Y Chen, H Elshekh, T Yu, S Mao, S Zhu, H Wang, Y Zhao, ...
Applied Materials Today 14, 21-28, 2019
822019
Magnetic-field and white-light controlled resistive switching behaviors in Ag/[BiFeO 3/γ-Fe 2 O 3]/FTO device
B Sun, Y Liu, W Zhao, P Chen
RSC Advances 5 (18), 13513-13518, 2015
742015
Two-dimensional Blue-AsP monolayers with tunable direct band gap and ultrahigh carrier mobility show promising high-performance photovoltaic properties
X Cai, Y Chen, B Sun, J Chen, H Wang, Y Ni, L Tao, H Wang, S Zhu, X Li, ...
Nanoscale 11 (17), 8260-8269, 2019
722019
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