Suivre
Mourad Hebali
Mourad Hebali
University Mustapha Stambouli of Mascara
Adresse e-mail validée de univ-mascara.dz
Titre
Citée par
Citée par
Année
New design of dual-band bandpass microwave filter based on electromagnetic effect of metamaterial resonators
M Berka, Z Mahdjoub, M Hebali
Journal of Electrical Engineering 69 (4), 311-316, 2018
102018
A high electrical performance of DG-MOSFET transistors in 4H-SiC and 6H-SiC 130 nm technology by BSIM3v3 Model
M Hebali, M Bennaoum, M Berka, A Baghdad Bey, M Benzohra, ...
journal of electrical engineering-elektrotechnicky casopis 70 (2), 145-151, 2019
62019
A Comparative Study on Electrical Characteristics of MOS (Si0.5Ge0.5) and MOS (4H-SiC) Transistors in 130nm Technology with BSIM3v3 Model''
M Hebali, D Berbara, M Benzohra, D Chalabi, A Saïdane
International Journal of Advances in Computer and Electronics Engineering …, 2018
62018
Fuel cell grid connected system with active power generation and reactive power compensation features
HA Azzeddine, D Chaouch, M Berka, M Hebali, A Larbaoui, M Tioursi
Przegląd Elektrotechniczny 11, 124-127, 2020
52020
An efficient fuel cell maximum power point tracker based on an adaptive neural fuzzy inference system
A Zouggaret, HA Azzeddine, D Chaouch, M Berka, M Hebali, M Bellil, ...
Przeglad Elektrotechniczny 99 (2), 135-139, 2023
42023
Numerical Study of the Impact of Junction Depth and the Surface Recombination Velocity on Electrical Parameters of GaAs-Solar Cell
AB Bey, A Talbi, M Hebali, M Berka, F Ducroquet
International journal of advanced Science and Engineering 5 (3), 1064-1071, 2019
42019
MOSiC (3C, 4H and 6H) Transistors 130nm by BSIM3v3 Model in Low Voltage and Low Power
M Hebali, D Berbara, M Benzohra, D Chalabi, A Saïdane, AB Bey
Journal of Engineering Science and Technology Review 10 (5), 195-198, 2017
42017
MINIATURIZATION OF THE BANDPASS MICROWAVE FILTER BASED ON SPIRAL METAMATERIAL RESONATORS
M Berka, M Hebali, AB Bey, M Bennaoum, Z Mahdjoub
ICTACT Journal on Microelectronics 4 (4), 693-696, 2019
32019
Effect of Temperature on Electrical Behavior of 4H-SiC and 6H-SiC Double-Gate (DG) MOSFETs in 130nm Technology
M Hebali, HAA Menaouer Bennaoum, M Benzohra, D Chalabi
Journal of Engineering Science and Technology Review 14 (2), 18-22, 2021
2*2021
An Ultra-low Power, High SNM, High Speed and High Temperature of 6T-SRAM Cell in 3C-SiC 130 nm CMOS Technology
D Berbara, MA Abid, M Hebali, M Benzohra, D Chalabi
JOURNAL OF NANO- AND ELECTRONIC PHYSICS 12 (4), 04024(4pp), 2020
22020
Characteristics and Electrical Parameters of Silicon Nanowires (SiNWs) Solar Nanocells
M Hebali, M Bennaoum, HA Azzeddine, B Ibari, M Benzohra, D Chalabi
Sumy State University, 2020
22020
IMPACT OF SILICON THICKNESS ON ELECTRICAL PERFORMANCE OF SOLAR CELL IN SUBMICRON TECHNOLOGY
M Hebali, M Barka, AB Bey, MA Abid, M Benzohra, D Chalabi, A Saïdane
2
Enhancement of pH-Sensor Sensitivity Using Si and SiC ISFETs Transistors
M Hebali, M Djerioui, B Ibari, HA Azzeddine, M Bennaoum, D Chalabi
Silicon 15 (12), 5245-5251, 2023
12023
BSIM3v3 Characterization and Simulation of MOS Si1–xGex Transistors with 130 nm Submicron Technology
M Hebali, M Bennaoum, M Benzohra, D Chalabi, A Saïdane
Journal of Nano- and Electronic Physics 11 (4), 04021(6pp), 2019
12019
A Graphical Method to Study Electrostatic Potentials of 25 nm Channel Length DG SOI MOSFETs
M Djerioui, M Hebali, D Chalabi, A Saïdane
Sumy State University, 2018
12018
Design of Miniaturized Planar Antenna based on Complementary Metamaterial Resonators Dedicated to Wireless Communication Handheld Devices
B Mohammed, H Mourad, B Amina, U Özkaya, M Zoubir
1
Effect of Electronic Properties of Si1-xGex and SiC Semiconductors on the Electrical Behavior of MOS Transistors
M Hebali
Physics of Semiconductor Devices & Renewable Energies Journal 1 (1), 13-13, 2024
2024
Electrical Properties of ITO/Al0. 7Ga0. 3As/ITO Solar Cell With and Without Defects
M Hebali, B Ibari, M Bennaoum, MEA Beyour, M Berka, HA Azzeddine, ...
Journal of Renewable Energy and Environment 11 (2), 163-167, 2024
2024
Collision detection and external force estimation for robot manipulators using a composite momentum observer
B Ibari, M Hebali, B Rezali, M Bennaoum
AIMS Electronics and Electrical Engineering 8 (2), 237-254, 2024
2024
Effect of Semiconductor Materials on the Current Control Voltage Source Trancitor Hall Voltage.
M Hebali, HA Azzeddine, B Ibari, M Berka, A Maachou, M Bennaoum, ...
Journal of Engineering Science & Technology Review 17 (2), 2024
2024
Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.
Articles 1–20