Resonant cavity light‐emitting diode EF Schubert, YH Wang, AY Cho, LW Tu, GJ Zydzik
Applied physics letters 60 (8), 921-923, 1992
466 1992 Light emitting diode AY Cho, EF Schubert, LW Tu, GJ Zydzik
US Patent 5,226,053, 1993
210 1993 Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy LW Tu, CL Hsiao, TW Chi, I Lo, KY Hsieh
Applied Physics Letters 82 (10), 1601-1603, 2003
159 2003 GaN nanowire ultraviolet photodetector with a graphene transparent contact AV Babichev, H Zhang, P Lavenus, FH Julien, AY Egorov, YT Lin, LW Tu, ...
Applied Physics Letters 103 (20), 2013
152 2013 Elimination of heterojunction band discontinuities by modulation doping EF Schubert, LW Tu, GJ Zydzik, RF Kopf, A Benvenuti, MR Pinto
Applied physics letters 60 (4), 466-468, 1992
131 1992 Generation of electricity in GaN nanorods induced by piezoelectric effect WS Su, YF Chen, CL Hsiao, LW Tu
Applied Physics Letters 90 (6), 2007
125 2007 Spin splitting in modulation-doped heterostructures I Lo, JK Tsai, WJ Yao, PC Ho, LW Tu, TC Chang, S Elhamri, WC Mitchel, ...
Physical Review B 65 (16), 161306, 2002
120 2002 Anomalous temporal response of gain guided surface emitting lasers NK Dutta, LW Tu, G Hasnain, G Zydzik, YH Wang, AY Cho
Electronics Letters 27 (3), 208-210, 1991
114 1991 Visible-blind photodetector based on p–i–n junction GaN nanowire ensembles A de Luna Bugallo, M Tchernycheva, G Jacopin, L Rigutti, FH Julien, ...
Nanotechnology 21 (31), 315201, 2010
101 2010 Thermal annealing effect on material characterizations of β-Ga2O3 epilayer grown by metal organic chemical vapor deposition CY Huang, RH Horng, DS Wuu, LW Tu, HS Kao
Applied Physics Letters 102 (1), 2013
99 2013 High-dielectric-constant metal-oxide-semiconductor structure LW Tu, WC Kuo, KH Lee, PH Tsao, CM Lai, AK Chu, JK Sheu
Applied Physics Letters 77 (23), 3788-3790, 2000
97 2000 Micro-Raman spectroscopy of a single freestanding GaN nanorod grown by molecular beam epitaxy CL Hsiao, LW Tu, TW Chi, M Chen, TF Young, CT Chia, YM Chang
Applied Physics Letters 90 (4), 2007
89 2007 Vertical cavity surface emmitting lasers with transparent electrodes RF Kopf, HM O'Bryan Jr, EF Schubert, LW Tu, YH Wang, GJ Zydzik
US Patent 5,115,441, 1992
87 1992 Theoretical simulations of the effects of the indium content, thickness, and defect density of the i-layer on the performance of pin InGaN single homojunction solar cells SW Feng, CM Lai, CH Chen, WC Sun, LW Tu
Journal of applied physics 108 (9), 2010
86 2010 Recombination velocity at oxide–GaAs interfaces fabricated by in situ molecular beam epitaxy M Passlack, M Hong, JP Mannaerts, JR Kwo, LW Tu
Applied physics letters 68 (25), 3605-3607, 1996
85 1996 Novel Ga2O3 (Ga2O3) passivation techniques to produce low Dit oxide-GaAs interfaces M Hong, JP Mannaerts, JE Bower, J Kwo, M Passlack, WY Hwang, LW Tu
Journal of crystal growth 175, 422-427, 1997
80 1997 Effects of crystallinity and point defects on optoelectronic applications of β-Ga2 O3 epilayers P Ravadgar, RH Horng, SD Yao, HY Lee, BR Wu, SL Ou, LW Tu
Optics Express 21 (21), 24599-24610, 2013
74 2013 Specular scattering probability of acoustic phonons in atomically flat interfaces YC Wen, CL Hsieh, KH Lin, HP Chen, SC Chin, CL Hsiao, YT Lin, ...
Physical review letters 103 (26), 264301, 2009
71 2009 Vertical cavity surface emitting lasers with electrically conducting mirrors DG Deppe, LC Feldman, RF Kopf, EF Schubert, LW Tu, GJ Zydzik
US Patent 5,068,868, 1991
69 1991 In‐vacuum cleaving and coating of semiconductor laser facets using thin silicon and a dielectric LW Tu, EF Schubert, M Hong, GJ Zydzik
Journal of applied physics 80 (11), 6448-6451, 1996
64 1996