zarko gacevic
zarko gacevic
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Formation mechanisms of GaN nanowires grown by selective area growth homoepitaxy
Z Gačević, D Gomez Sanchez, E Calleja
Nano letters 15 (2), 1117-1121, 2015
812015
Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy
Ž Gačević, A Das, J Teubert, Y Kotsar, PK Kandaswamy, T Kehagias, ...
Journal of Applied Physics 109 (10), 103501, 2011
792011
A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy
S Fernández-Garrido, Ž Gačević, E Calleja
Applied Physics Letters 93 (19), 191907, 2008
572008
A comprehensive diagram to grow (0001) InGaN alloys by molecular beam epitaxy
Ž Gačević, VJ Gómez, NG Lepetit, PEDS Rodríguez, A Bengoechea, ...
Journal of crystal growth 364, 123-127, 2013
502013
Intraband absorption in InAs/GaAs quantum dot infrared photodetectors—effective mass versus k× p modelling
N Vukmirović, Ž Gačević, Z Ikonić, D Indjin, P Harrison, V Milanović
Semiconductor science and technology 21 (8), 1098, 2006
492006
Emission of linearly polarized single photons from quantum dots contained in nonpolar, semipolar, and polar sections of pencil-like InGaN/GaN nanowires
Z Gačević, M Holmes, E Chernysheva, M Müller, A Torres-Pardo, ...
ACS Photonics 4 (3), 657-664, 2017
322017
High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy
Ž Gačević, S Fernández-Garrido, JM Rebled, S Estradé, F Peiró, E Calleja
Applied Physics Letters 99 (3), 031103, 2011
282011
A top-gate GaN nanowire metal–semiconductor field effect transistor with improved channel electrostatic control
Ž Gačević, D López-Romero, T Juan Mangas, E Calleja
Applied Physics Letters 108 (3), 033101, 2016
272016
Blue-to-green single photons from InGaN/GaN dot-in-a-nanowire ordered arrays
E Chernysheva, Ž Gačević, N García-Lepetit, HP van der Meulen, ...
EPL (Europhysics Letters) 111 (2), 24001, 2015
262015
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
AD Utrilla, DF Reyes, JM Llorens, I Artacho, T Ben, D González, Ž Gačević, ...
Solar Energy Materials and Solar Cells 159, 282-289, 2017
252017
Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires
Ž Gačević, N Vukmirović, N García-Lepetit, A Torres-Pardo, M Müller, ...
Physical Review B 93 (12), 125436, 2016
232016
Optoelectronic properties of InAlN/GaN distributed Bragg reflector heterostructure examined by valence electron energy loss spectroscopy
A Eljarrat, S Estradé, Ž Gačević, S Fernández-Garrido, E Calleja, ...
Microscopy and Microanalysis 18 (5), 1143-1154, 2012
232012
InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy
Ž Gačević, S Fernández-Garrido, D Hosseini, S Estradé, F Peiró, ...
Journal of Applied Physics 108 (11), 113117, 2010
222010
Crystallographically uniform arrays of ordered (In) GaN nanocolumns
Ž Gačević, A Bengoechea-Encabo, S Albert, A Torres-Pardo, ...
Journal of Applied Physics 117 (3), 035301, 2015
172015
Improving optical performance of GaN nanowires grown by selective area growth homoepitaxy: Influence of substrate and nanowire dimensions
P Aseev, Ž Gačević, A Torres-Pardo, JM González-Calbet, E Calleja
Applied Physics Letters 108 (25), 253109, 2016
152016
Impact of alloyed capping layers on the performance of InAs quantum dot solar cells
AD Utrilla, JM Ulloa, Ž Gačević, DF Reyes, I Artacho, T Ben, D González, ...
Solar Energy Materials and Solar Cells 144, 128-135, 2016
152016
Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves
S Lazić, E Chernysheva, Ž Gačević, HP van der Meulen, E Calleja, ...
AIP Advances 5 (9), 097217, 2015
132015
Growth and characterization of lattice‐matched InAlN/GaN Bragg reflectors grown by plasma‐assisted molecular beam epitaxy
Ž Gačević, S Fernández‐Garrido, E Calleja, E Luna, A Trampert
physica status solidi c 6 (S2 2), S643-S645, 2009
132009
Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters
S Lazić, E Chernysheva, Ž Gačević, N García-Lepetit, HP van der Meulen, ...
Gallium Nitride Materials and Devices X 9363, 93630U, 2015
112015
Insight into the compositional and structural nano features of AlN/GaN DBRs by EELS-HAADF
A Eljarrat, L Lopez-Conesa, C Magén, Z GaÄevic, S Fernández-Garrido, ...
Microscopy and Microanalysis 19 (3), 698, 2013
112013
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