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Sundar Isukapati
Sundar Isukapati
SUNY Polytechnic Institute
Adresse e-mail validée de sunypoly.edu
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Monolithic integration of lateral HV power MOSFET with LV CMOS for SiC power IC technology
SB Isukapati, H Zhang, T Liu, E Ashik, B Lee, AJ Morgan, W Sung, ...
2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021
282021
Microstructure and optical properties of sputter-deposited Ga2O3 films
E Vega, SB Isukapati, TN Oder
Journal of Vacuum Science & Technology A 39 (3), 2021
222021
Development of Isolated CMOS and HV MOSFET on an N- epi/P- epi/4H-SiC N+ Substrate for Power IC Applications
SB Isukapati, AJ Morgan, W Sung, H Zhang, T Liu, A Fayed, AK Agarwal, ...
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021
122021
Impact of charge balance on static and dynamic characteristics of GaN super-heterojunction Schottky barrier diodes
JT Kemmerling, R Guan, M Sadek, S Isukapati, W Sung, SW Han, R Chu
IEEE Electron Device Letters 43 (5), 701-704, 2022
72022
Effects of deposition temperature on the electrical properties of Ti/SiC Schottky barrier diodes
TN Oder, KC Kundeti, N Borucki, SB Isukapati
AIP Advances 7 (12), 2017
72017
SPICE modeling and CMOS circuit development of a SiC power IC technology
T Liu, H Zhang, SB Isukapati, E Ashik, AJ Morgan, B Lee, W Sung, ...
2021 IEEE International Midwest Symposium on Circuits and Systems (MWSCAS …, 2021
52021
Edge Termination and Peripheral Designs for SiC High-Voltage (HV) Lateral MOSFETs for Power IC Technology
SB Isukapati, AJ Morgan, W Sung
2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022
42022
Spice modeling and circuit demonstration of a sic power ic technology
T Liu, H Zhang, SB Isukapati, E Ashik, AJ Morgan, B Lee, W Sung, ...
IEEE Journal of the Electron Devices Society 10, 129-138, 2022
42022
Gallium oxide thin films for optoelectronic applications
SB Isukapati
Youngstown State University, 2018
42018
Static, Dynamic, and Short-circuit Characteristics of Split-Gate 1.2 kV 4H-SiC MOSFETs
D Kim, S DeBoer, SA Mancini, SB Isukapati, J Lynch, N Yun, AJ Morgan, ...
2023 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2023
22023
Area-Efficient High-Voltage (HV) Lateral MOSFETs for Discrete Device Development and Power IC Integration
SB Isukapati, SY Jang, W Sung
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA …, 2022
22022
A 600V Half-Bridge Power Stage Fully Integrated with 25V Gate-Drivers in SiC CMOS Technology
H Zhang, T Liu, U Gupta, SB Isukapati, E Ashik, AJ Morgan, B Lee, ...
2022 IEEE 65th International Midwest Symposium on Circuits and Systems …, 2022
22022
GaN Super-Heterojunction FETs With 10-kV Blocking and 3-kV Dynamic Switching
JT Kemmerling, R Guan, M Sadek, Y Xiong, J Song, SW Han, S Isukapati, ...
IEEE Transactions on Electron Devices, 2024
12024
Bias Temperature Instability on SiC n-and p-MOSFETs for High Temperature CMOS Applications
EK Ashik, SB Isukapati, H Zhang, T Liu, U Gupta, AJ Morgan, V Misra, ...
2022 IEEE International Reliability Physics Symposium (IRPS), 3B. 4-1-3B. 4-8, 2022
12022
Demonstration of Cell-to-Cell Integrated 4H-SiC Lateral Bi-Directional Junction Field Effect Transistor (LBiDJFET)
SY Jang, SB Isukapati, J Lynch, W Sung
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021
12021
A 400 V Buck Converter integrated with Gate-Drivers and low-voltage Controller in a 25–600 V mixed-mode SiC CMOS technology
U Gupta, H Zhang, T Liu, S Isukapati, E Ashik, A Morgan, B Lee, W Sung, ...
Analog Integrated Circuits and Signal Processing, 1-12, 2024
2024
Design and experimental demonstration of high-voltage lateral nMOSFETs and high-temperature CMOS ICs
SB Isukapati, H Zhang, T Liu, U Gupta, E Ashik, AJ Morgan, SY Jang, ...
Materials Science in Semiconductor Processing 169, 107921, 2024
2024
Enhanced Design Architecture to Suppress Leakage Current of High-Voltage (HV) Lateral nMOSFETs in 4H-SiC
SB Isukapati, SY Jang, W Sung
2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023
2023
First Demonstration of 600 V 4H-SiC Lateral Bi-Directional Metal-Oxide-Semiconductor Field-Effect Transistor (LBiDMOS)
SY Jang, SB Isukapati, D Kim, W Sung
2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023
2023
An Efficient Design Approach to Optimize the Drift Layer of Unipolar Power Devices in 4H-SiC
SB Isukapati, W Sung
IEEE Journal of the Electron Devices Society 8, 176-181, 2020
2020
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