Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics Q He, W Mu, H Dong, S Long, Z Jia, H Lv, Q Liu, M Tang, X Tao, M Liu
Applied Physics Letters 110 (9), 2017
172 2017 High quality crystal growth and anisotropic physical characterization of β-Ga2O3 single crystals grown by EFG method W Mu, Z Jia, Y Yin, Q Hu, Y Li, B Wu, J Zhang, X Tao
Journal of Alloys and Compounds 714, 453-458, 2017
123 2017 Electronic structure and optical property of metal-doped Ga 2 O 3: a first principles study C Tang, J Sun, N Lin, Z Jia, W Mu, X Tao, X Zhao
RSC advances 6 (82), 78322-78334, 2016
86 2016 Nanosecond-pulsed, dual-wavelength, passively Q-switched ytterbium-doped bulk laser based on few-layer MoS2 saturable absorber F Lou, R Zhao, J He, Z Jia, X Su, Z Wang, J Hou, B Zhang
Photonics Research 3 (2), A25-A29, 2015
86 2015 A review of β-Ga2O3 single crystal defects, their effects on device performance and their formation mechanism B Fu, Z Jia, W Mu, Y Yin, J Zhang, X Tao
Journal of Semiconductors 40 (1), 011804, 2019
83 2019 Ga2 O3 Field-Effect-Transistor-Based Solar-Blind Photodetector With Fast Response and High Photo-to-Dark Current Ratio Y Liu, L Du, G Liang, W Mu, Z Jia, M Xu, Q Xin, X Tao, A Song
IEEE Electron Device Letters 39 (11), 1696-1699, 2018
80 2018 One-step exfoliation of ultra-smooth β-Ga 2 O 3 wafers from bulk crystal for photodetectors W Mu, Z Jia, Y Yin, Q Hu, J Zhang, Q Feng, Y Hao, X Tao
CrystEngComm 19 (34), 5122-5127, 2017
79 2017 Study on crystal growth of large size Nd3+: Gd3Ga5O12 (Nd3+: GGG) by Czochralski method Z Jia, X Tao, C Dong, X Cheng, W Zhang, F Xu, M Jiang
Journal of Crystal Growth 292 (2), 386-390, 2006
79 2006 Comparison Study of2 O3 Photodetectors on Bulk Substrate and Sapphire Q Feng, L Huang, G Han, F Li, X Li, L Fang, X Xing, J Zhang, W Mu, Z Jia, ...
IEEE Transactions on Electron Devices 63 (9), 3578-3583, 2016
72 2016 Toward emerging gallium oxide semiconductors: A roadmap Y Yuan, W Hao, W Mu, Z Wang, X Chen, Q Liu, G Xu, C Wang, H Zhou, ...
Fundamental Research 1 (6), 697-716, 2021
69 2021 Schottky Barrier Rectifier Based on (100)2 O3 and its DC and AC Characteristics Q He, W Mu, B Fu, Z Jia, S Long, Z Yu, Z Yao, W Wang, H Dong, Y Qin, ...
IEEE Electron Device Letters 39 (4), 556-559, 2018
69 2018 Highly Narrow-Band Polarization-Sensitive Solar-Blind Photodetectors Based on β-Ga2 O3 Single Crystals X Chen, W Mu, Y Xu, B Fu, Z Jia, FF Ren, S Gu, R Zhang, Y Zheng, X Tao, ...
ACS applied materials & interfaces 11 (7), 7131-7137, 2019
66 2019 High‐power continuous wave and passively Q‐switched laser operations of a Nd: GGG crystal LJ Qin, DY Tang, GQ Xie, CM Dong, ZT Jia, XT Tao
Laser Physics Letters 5 (2), 100-103, 2008
66 2008 High-Voltage β-Ga2 O3 Schottky Diode with Argon-Implanted Edge Termination Y Gao, A Li, Q Feng, Z Hu, Z Feng, K Zhang, X Lu, C Zhang, H Zhou, ...
Nanoscale research letters 14, 1-8, 2019
62 2019 Effect of OH− on chemical mechanical polishing of β-Ga 2 O 3 (100) substrate using an alkaline slurry C Huang, W Mu, H Zhou, Y Zhu, X Xu, Z Jia, L Zheng, X Tao
RSC advances 8 (12), 6544-6550, 2018
62 2018 Femtosecond solid-state laser based on a few-layered black phosphorus saturable absorber X Su, Y Wang, B Zhang, R Zhao, K Yang, J He, Q Hu, Z Jia, X Tao
Optics letters 41 (9), 1945-1948, 2016
61 2016 Multi-wavelength diode-pumped Nd: LGGG picosecond laser A Agnesi, F Pirzio, G Reali, A Arcangeli, M Tonelli, Z Jia, X Tao
Applied Physics B 99, 135-140, 2010
58 2010 Characterization of the inhomogeneous barrier distribution in a Pt/(100) β-Ga2O3 Schottky diode via its temperature-dependent electrical properties G Jian, Q He, W Mu, B Fu, H Dong, Y Qin, Y Zhang, H Xue, S Long, Z Jia, ...
AIP Advances 8 (1), 2018
57 2018 Evaluation of spectroscopic properties of Er3+ /Yb3+ /Pr3+ : SrGdGa3 O7 crystal for use in mid-infrared lasers H Xia, J Feng, Y Wang, J Li, Z Jia, C Tu
Scientific reports 5 (1), 13988, 2015
56 2015 The properties of gallium oxide thin film grown by pulsed laser deposition Q Feng, F Li, B Dai, Z Jia, W Xie, T Xu, X Lu, X Tao, J Zhang, Y Hao
Applied Surface Science 359, 847-852, 2015
49 2015 
tao xutangState Key Laboratory of Crystal MaterialsAdresse e-mail validée de sdu.edu.cn
