| Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization SW Lee, SK Joo IEEE Electron Device Letters 17 (4), 160-162, 1996 | 701 | 1996 |
| Pd induced lateral crystallization of amorphous Si thin films SW Lee, YC Jeon, SK Joo Applied physics letters 66 (13), 1671-1673, 1995 | 369 | 1995 |
| Fabrication of high-mobility p-channel poly-Si thin film transistors by self-aligned metal-induced lateral crystallization SW Lee, TH Ihn, SK Joo IEEE Electron Device Letters 17 (8), 407-409, 1996 | 98 | 1996 |
| Method for fabricating thin film transistor including crystalline silicon active layer SW Lee, SK Joo US Patent 6,548,331, 2003 | 74 | 2003 |
| Thin film transistor including polycrystalline active layer and method for fabricating the same SW Lee, SK Joo US Patent 6,596,573, 2003 | 50 | 2003 |
| Effect of transition metal addition on liquid phase sintering of W–Cu TH Ihn, SW Lee, SK Joo Powder metallurgy 37 (4), 283-288, 1994 | 48 | 1994 |
| Pd2Si-assisted crystallization of amorphous silicon thin films at low temperature SW Lee, BI Lee, TK Kim, SK Joo Journal of applied physics 85 (10), 7180-7184, 1999 | 44 | 1999 |
| Method for crystallizing a silicon layer and fabricating a TFT using the same SK Joo, SW Lee US Patent 6,727,121, 2004 | 39 | 2004 |
| Effect of cobalt addition on the liquid-phase sintering of W-Cu prepared by the fluidized bed reduction method SK Joo, SW Lee, TH Ihn Metallurgical and Materials transactions A 25 (8), 1575-1578, 1994 | 36 | 1994 |
| Electrical characteristics of MILC poly-Si TFTs with long Ni-offset structure GB Kim, YG Yoon, MS Kim, H Jung, SW Lee, SK Joo IEEE Transactions on Electron Devices 50 (12), 2344-2347, 2003 | 33 | 2003 |
| Method for crystallizing silicon layer SW Lee, SK Joo US Patent 6,692,996, 2004 | 31 | 2004 |
| Low-Temperature Fabrication of Polycrystalline Silicon Thin Films by ECR Pecvd Y Jeon The Electrochemical Society Proceedings 94 (35), 103-114, 1995 | 28 | 1995 |
| Low‐temperature dopant activation and its application to polycrystalline silicon thin film transistors SW Lee, TH Ihn, SK Joo Applied physics letters 69 (3), 380-382, 1996 | 26 | 1996 |
| Display device and method of manufacturing the same SW Lee, SS Park, BS Wu US Patent 7,576,364, 2009 | 23 | 2009 |
| Method and apparatus for fabricating thin film transistor including crystalline active layer SK Joo, SW Lee US Patent App. 10/718,141, 2003 | 19 | 2003 |
| Crystalline silicon thin film transistor panel for OELD and method of fabricating the same SK Joo, SW Lee US Patent App. 10/290,094, 2002 | 18 | 2002 |
| Storage capacitor structure for LCD and OELD panels SK Joo, SW Lee US Patent 6,833,561, 2004 | 17 | 2004 |
| Thin film transistor including polycrystalline active layer and method for fabricating the same S Lee, S Joo US Patent App. 10/427,648, 2004 | 16 | 2004 |
| Method for fabricating thin film transistor including crystalline silicon active layer SK Joo, SW Lee US Patent 6,586,287, 2003 | 14 | 2003 |
| Method and apparatus for fabricating thin film transistor including crystalline active layer SK Joo, SW Lee US Patent App. 10/055,693, 2002 | 14 | 2002 |
Tae Kyung KimSamsung electronicsAdresse e-mail validée de samsung.com
