Short-channel effect limitations on high-frequency operation of AlGaN/GaN HEMTs for T-gate devices GH Jessen, RC Fitch, JK Gillespie, G Via, A Crespo, D Langley, ...
IEEE Transactions on Electron Devices 54 (10), 2589-2597, 2007
530 * 2007 AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using R Mehandru, B Luo, J Kim, F Ren, BP Gila, AH Onstine, CR Abernathy, ...
Applied physics letters 82 (15), 2530-2532, 2003
175 2003 Wet chemical digital etching of GaAs at room temperature GC DeSalvo, CA Bozada, JL Ebel, DC Look, JP Barrette, CLA Cerny, ...
Journal of The Electrochemical Society 143 (11), 3652, 1996
150 1996 High-power Ka-band performance of AlInN/GaN HEMT with 9.8-nm-thin barrier A Crespo, MM Bellot, KD Chabak, JK Gillespie, GH Jessen, V Miller, ...
IEEE Electron Device Letters 31 (1), 2-4, 2009
122 2009 Full-wafer characterization of AlGaN/GaN HEMTs on free-standing CVD diamond substrates KD Chabak, JK Gillespie, V Miller, A Crespo, J Roussos, M Trejo, ...
IEEE electron device letters 31 (2), 99-101, 2009
96 2009 Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕ GaN high electron mobility transistors HT Wang, BS Kang, F Ren, RC Fitch, JK Gillespie, N Moser, G Jessen, ...
Applied Physics Letters 87 (17), 2005
84 2005 Field effect transistor device with single layer integrated metal and retained semiconductor masking CA Bozada, TK Quach, K Nakano, GC DeSalvo, GD Via, RW Dettmer, ...
US Patent 5,698,900, 1997
83 * 1997 ScAlN/GaN high-electron-mobility transistors with 2.4-A/mm current density and 0.67-S/mm transconductance AJ Green, JK Gillespie, RC Fitch, DE Walker, M Lindquist, A Crespo, ...
IEEE Electron Device Letters 40 (7), 1056-1059, 2019
76 2019 Implementation of High-Power-Density RC Fitch, DE Walker, AJ Green, SE Tetlak, JK Gillespie, RD Gilbert, ...
IEEE electron device letters 36 (10), 1004-1007, 2015
68 2015 High electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) devices with single layer integrated metal K Nakano, CA Bozada, TK Quach, GC DeSalvo, GD Via, RW Dettmer, ...
US Patent 5,698,870, 1997
68 * 1997 AlGaN/GaN HEMT on diamond technology demonstration GH Jessen, JK Gillespie, GD Via, A Crespo, D Langley, J Wasserbauer, ...
2006 IEEE Compound Semiconductor Integrated Circuit Symposium, 271-274, 2006
65 2006 Effects of Sc2 O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs JK Gillespie, RC Fitch, J Sewell, R Dettmer, GD Via, A Crespo, TJ Jenkins, ...
IEEE Electron Device Letters 23 (9), 505-507, 2002
65 2002 RF Power Measurements of InAlN/GaN Unstrained HEMTs on SiC Substrates at 10 GHz GH Jessen, JK Gillespie, GD Via, A Crespo, D Langley, ME Aumer, ...
IEEE electron device letters 28 (5), 354-356, 2007
59 2007 Electrical characteristics of proton-irradiated B Luo, J Kim, F Ren, JK Gillespie, RC Fitch, J Sewell, R Dettmer, GD Via, ...
Applied physics letters 82 (9), 1428-1430, 2003
55 2003 Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors B Luo, R Mehandru, J Kim, F Ren, BP Gila, AH Onstine, CR Abernathy, ...
Journal of The Electrochemical Society 149 (11), G613, 2002
52 2002 Field effect transistor device with single layer integrated metal and retained semiconductor masking CA Bozada, TK Quach, K Nakano, GC DeSalvo, GD Via, RW Dettmer, ...
US Patent 5,698,900, 1997
52 * 1997 Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using B Luo, F Ren, RC Fitch, JK Gillespie, T Jenkins, J Sewell, D Via, A Crespo, ...
Applied physics letters 82 (22), 3910-3912, 2003
50 2003 RF power performance of Sc (al, Ga) N/GaN HEMTs at Ka-band AJ Green, N Moser, NC Miller, KJ Liddy, M Lindquist, M Elliot, JK Gillespie, ...
IEEE Electron Device Letters 41 (8), 1181-1184, 2020
49 2020 Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors L Liu, CF Lo, Y Xi, Y Wang, F Ren, SJ Pearton, HY Kim, J Kim, RC Fitch, ...
Journal of Vacuum Science & Technology B 31 (2), 2013
49 2013 Effective suppression of IV knee walk-out in AlGaN/GaN HEMTs for pulsed-IV pulsed-RF with a large signal network analyzer SJ Doo, P Roblin, GH Jessen, RC Fitch, JK Gillespie, NA Moser, A Crespo, ...
IEEE Microwave and wireless components letters 16 (12), 681-683, 2006
42 2006 
Robert C. Fitch, Jr.Principal Electronics Engineer, AFRLAdresse e-mail validée de us.af.mil
