| High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems HY Chang, S Yang, J Lee, L Tao, WS Hwang, D Jena, N Lu, D Akinwande ACS nano 7 (6), 5446-5452, 2013 | 570 | 2013 |
| On the mobility and contact resistance evaluation for transistors based on MoS2 or two-dimensional semiconducting atomic crystals HY Chang, W Zhu, D Akinwande Applied Physics Letters 104 (11), 2014 | 228 | 2014 |
| Large-area monolayer MoS2 for flexible low-power RF nanoelectronics in the GHz regime HY Chang, MN Yogeesh, R Ghosh, A Rai, A Sanne, S Yang, N Lu, ... Adv. Mater 28 (9), 1818-1823, 2016 | 206 | 2016 |
| Thermal Oxidation of WSe2 Nanosheets Adhered on SiO2/Si Substrates Y Liu, C Tan, H Chou, A Nayak, D Wu, R Ghosh, HY Chang, Y Hao, ... Nano letters 15 (8), 4979-4984, 2015 | 97 | 2015 |
| Transparent nanoscale polyimide gate dielectric for highly flexible electronics S Park, HY Chang, S Rahimi, AL Lee, L Tao, D Akinwande Advanced Electronic Materials 4 (2), 1700043, 2018 | 27 | 2018 |
| High-performance flexible nanoelectronics: 2D atomic channel materials for low-power digital and high-frequency analog devices J Lee, HY Chang, TJ Ha, H Li, RS Ruoff, A Dodabalapur, D Akinwande 2013 IEEE International Electron Devices Meeting, 19.2. 1-19.2. 4, 2013 | 26 | 2013 |
| High-frequency prospects of 2D nanomaterials for flexible nanoelectronics from baseband to sub-THz devices S Park, W Zhu, HY Chang, MN Yogeesh, R Ghosh, SK Banerjee, ... 2015 IEEE International Electron Devices Meeting (IEDM), 32.1. 1-32.1. 4, 2015 | 25 | 2015 |
| ACS Nano 7, 5446 (2013) HY Chang, S Yang, J Lee, L Tao, WS Hwang, D Jena, N Lu, D Akinwande Article CAS, 0 | 25 | |
| Inversion of the electrical and optical properties of partially oxidized hexagonal Boron Nitride AP Nayak, A Dolocan, J Lee, HY Chang, T Pandhi, M Holt, LI Tao, ... Nano 9 (01), 1450002, 2014 | 13 | 2014 |
| Towards wafer scale monolayer MoS2 based flexible low-power RF electronics for IoT systems M Yogeesh, HY Chang, W Li, S Rahimi, A Rai, A Sanne, R Ghosh, ... 2016 74th Annual Device Research Conference (DRC), 1-2, 2016 | 9 | 2016 |
| ACS Nano 7 (6), 5446 (2013) HY Chang, S Yang, J Lee, L Tao, WS Hwang, D Jena, N Lu, D Akinwande | 6 | |
| Flexible 2D electronics using nanoscale transparent polyimide gate dielectric S Park, HY Chang, S Rahimi, A Lee, D Akinwande 2015 73rd Annual Device Research Conference (DRC), 193-194, 2015 | 5 | 2015 |
| State-of-the-art large area CVD MoS2 based RF electronics MN Yogeesh, A Sanne, S Park, HY Chang, R Ghosh, SK Banerjee, ... 2016 3rd International Conference on Emerging Electronics (ICEE), 1-3, 2016 | 3 | 2016 |
| State-of-the-art flexible 2D nanoelectronics based on graphene and MoS2 J Lee, HY Chang, KN Parrish, H Li, RS Ruoff, D Akinwande 71st Device Research Conference, 43-44, 2013 | 3 | 2013 |
| The Optoelectronic Properties of CVD Grown MoS2 Nanowalls A Sharma, A Nayak, R Ghosh, HY Chang 2014 NCUR, 2014 | 2 | 2014 |
| Flexible 2D nanoelectronics from baseband to sub-THz transistors and circuits W Zhu, S Park, HY Chang, MN Yogeesh, D Akinwande 2016 IEEE International Symposium on Circuits and Systems (ISCAS), 409-412, 2016 | 1 | 2016 |
| Device Physics and Devic e Mechanics for Flexibl e TMD and Phosphoren e Thin-Film Transistors HY Chang, W Zhu, D Akinwande 2D Materials for Nanoelectronics 17, 301, 2016 | | 2016 |
| Flexible GHz Frequency and Low-Power Nanoelectronics Based on 2D Nanomaterials D Akinwande, HY Chang, J Lee ECS Transactions 61 (6), 51, 2014 | | 2014 |
| Low-temperature wafer-scale fabrication of carbon nanotube network TFT: Geometry effect and transport mechanism HY Chang, BY Tsui The 4th IEEE International NanoElectronics Conference, 1-2, 2011 | | 2011 |
| Atomically thin devices II M Yogeesh, HY Chang, W Li, S Rahimi, A Rai, A Sanne, Z Cheng, ... | | |
