Hsiao-Yu Chang
Hsiao-Yu Chang
Affiliation inconnue
Adresse e-mail validée de utexas.edu
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Citée par
High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems
HY Chang, S Yang, J Lee, L Tao, WS Hwang, D Jena, N Lu, D Akinwande
ACS nano 7 (6), 5446-5452, 2013
On the mobility and contact resistance evaluation for transistors based on MoS2 or two-dimensional semiconducting atomic crystals
HY Chang, W Zhu, D Akinwande
Applied Physics Letters 104 (11), 113504, 2014
Large‐Area Monolayer MoS2 for Flexible Low‐Power RF Nanoelectronics in the GHz Regime
HY Chang, MN Yogeesh, R Ghosh, A Rai, A Sanne, S Yang, N Lu, ...
Advanced Materials 28 (9), 1818-1823, 2016
Thermal Oxidation of WSe2 Nanosheets Adhered on SiO2/Si Substrates
Y Liu, C Tan, H Chou, A Nayak, D Wu, R Ghosh, HY Chang, Y Hao, ...
Nano letters 15 (8), 4979-4984, 2015
ACS Nano 7, 5446 (2013)
HY Chang, S Yang, J Lee, L Tao, WS Hwang, D Jena, N Lu, D Akinwande
CAS Article, 0
High-performance flexible nanoelectronics: 2D atomic channel materials for low-power digital and high-frequency analog devices
J Lee, HY Chang, TJ Ha, H Li, RS Ruoff, A Dodabalapur, D Akinwande
2013 IEEE International Electron Devices Meeting, 19.2. 1-19.2. 4, 2013
High-frequency prospects of 2D nanomaterials for flexible nanoelectronics from baseband to sub-THz devices
S Park, W Zhu, HY Chang, MN Yogeesh, R Ghosh, SK Banerjee, ...
2015 IEEE International Electron Devices Meeting (IEDM), 32.1. 1-32.1. 4, 2015
Transparent nanoscale polyimide gate dielectric for highly flexible electronics
S Park, HY Chang, S Rahimi, AL Lee, L Tao, D Akinwande
Advanced Electronic Materials 4 (2), 1700043, 2018
Inversion of the electrical and optical properties of partially oxidized hexagonal Boron Nitride
AP Nayak, A Dolocan, J Lee, HY Chang, T Pandhi, M Holt, LI Tao, ...
Nano 9 (01), 1450002, 2014
Flexible 2D electronics using nanoscale transparent polyimide gate dielectric
S Park, HY Chang, S Rahimi, A Lee, D Akinwande
2015 73rd Annual Device Research Conference (DRC), 193-194, 2015
ACS Nano 7 (6), 5446 (2013)
HY Chang, S Yang, J Lee, L Tao, WS Hwang, D Jena, N Lu, D Akinwande
State-of-the-art large area CVD MoS2 based RF electronics
MN Yogeesh, A Sanne, S Park, HY Chang, R Ghosh, SK Banerjee, ...
2016 3rd International Conference on Emerging Electronics (ICEE), 1-3, 2016
Towards wafer scale monolayer MoS2 based flexible low-power RF electronics for IoT systems
M Yogeesh, HY Chang, W Li, S Rahimi, A Rai, A Sanne, R Ghosh, ...
2016 74th Annual Device Research Conference (DRC), 1-2, 2016
The Optoelectronic Properties of CVD Grown MoS2 Nanowalls
A Sharma, A Nayak, R Ghosh, HY Chang
2014 NCUR, 2014
State-of-the-art flexible 2D nanoelectronics based on graphene and MoS2
J Lee, HY Chang, KN Parrish, H Li, RS Ruoff, D Akinwande
71st Device Research Conference, 43-44, 2013
Flexible 2D nanoelectronics from baseband to sub-THz transistors and circuits
W Zhu, S Park, HY Chang, MN Yogeesh, D Akinwande
2016 IEEE International Symposium on Circuits and Systems (ISCAS), 409-412, 2016
Device Physics and Devic e Mechanics for Flexibl e TMD and Phosphoren e Thin-Film Transistors
HY Chang, W Zhu, D Akinwande
2D Materials for Nanoelectronics 17, 301, 2016
Flexible GHz Frequency and Low-Power Nanoelectronics Based on 2D Nanomaterials
D Akinwande, HY Chang, J Lee
ECS Transactions 61 (6), 51, 2014
Low-temperature wafer-scale fabrication of carbon nanotube network TFT: Geometry effect and transport mechanism
HY Chang, BY Tsui
The 4th IEEE International NanoElectronics Conference, 1-2, 2011
Atomically thin devices II
M Yogeesh, HY Chang, W Li, S Rahimi, A Rai, A Sanne, Z Cheng, ...
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