| Transport of nonequilibrium carriers in bipolar semiconductors YG Gurevich, JE Velazquez-Perez, G Espejo-López, IN Volovichev, ... Journal of applied physics 101 (2), 2007 | 67 | 2007 |
| Heating and cooling in semiconductor structures by an electric current GN Logvinov, JE Velázquez, IM Lashkevych, YG Gurevich Applied physics letters 89 (9), 2006 | 55 | 2006 |
| Electron transport in InP under high electric field conditions TG Sanchez, JEV Perez, PMG Conde, DP Collantes Semiconductor science and technology 7 (1), 31, 1992 | 53 | 1992 |
| Asymmetric dual-grating gates graphene FET for detection of terahertz radiations JA Delgado-Notario, V Clericò, E Diez, JE Velázquez-Pérez, T Taniguchi, ... APL Photonics 5 (6), 2020 | 45 | 2020 |
| Transport boundary condition for semiconductor structures IN Volovichev, JE Velazquez-Perez, YG Gurevich Solid-State Electronics 52 (11), 1703-1709, 2008 | 41 | 2008 |
| Five-valley model for the study of electron transport properties at very high electric fields in GaAs TG Sánchez, JEV Pérez, PMG Conde, DP Collantes Semiconductor science and technology 6 (9), 862, 1991 | 41 | 1991 |
| Enhancement of resolution of low molecular weight RNA profiles by staircase electrophoresis JM Cruz‐Sánchez, E Velázquez, PF Mateos, E Velázquez, ... Electrophoresis 18 (11), 1909-1911, 1997 | 39 | 1997 |
| Peltier effect in semiconductors YG Gurevich, JE VELAZQUEZ‐PEREZ Wiley Encyclopedia of Electrical and Electronics Engineering, 1-21, 1999 | 35 | 1999 |
| Monte Carlo analysis of a Schottky diode with an automatic space-variable charge algorithm MJ Martín, T González, D Pardo, JE Velázquez Semiconductor science and technology 11 (3), 380, 1996 | 35 | 1996 |
| Analysis of current fluctuations in silicon pn+ and p+n homojunctions MJ Martin, JE Velázquez, D Pardo Journal of applied physics 79 (9), 6975-6981, 1996 | 28 | 1996 |
| Transport boundary conditions for solar cells IN Volovichev, JE Velazquez-Perez, YG Gurevich Solar Energy Materials and Solar Cells 93 (1), 6-10, 2009 | 27 | 2009 |
| Simulation of electron transport in silicon: impact-ionization processes MJ Martin, T Gonzalez, JE Velazquez, D Pardo Semiconductor science and technology 8 (7), 1291, 1993 | 27 | 1993 |
| Enhanced terahertz detection of multigate graphene nanostructures JA Delgado-Notario, W Knap, V Clericò, J Salvador-Sánchez, ... Nanophotonics 11 (3), 519-529, 2022 | 23 | 2022 |
| Monte Carlo study of sub-0.1/spl mu/m Si/sub 0.97/C/sub 0.03//Si MODFET: electron transport and device performance P Dollfus, S Galdin, P Hesto, JE Velázquez IEEE Transactions on Electron Devices 47 (6), 1247-1250, 2000 | 23 | 2000 |
| Terahertz imaging using strained-Si MODFETs as sensors YM Meziani, E García-García, JE Velázquez-Pérez, D Coquillat, ... Solid-State Electronics 83, 113-117, 2013 | 22 | 2013 |
| Effect of temperature on the transfer characteristic of a 0.5 μm-gate Si: SiGe depletion-mode n-MODFET V Gaspari, K Fobelets, JE Velazquez-Perez, R Ferguson, K Michelakis, ... Applied surface science 224 (1-4), 390-393, 2004 | 19 | 2004 |
| Microscopic analysis of the influence of strain and band-gap offsets on noise characteristics in heterojunctions MJ Martı́n Martinez, D Pardo, JE Velázquez Journal of applied physics 84 (9), 5012-5020, 1998 | 19 | 1998 |
| The role of non-equilibrium charge carriers in thermoelectric cooling YG Gurevich, JE Velázquez-Pérez Journal of Applied Physics 114 (3), 2013 | 18 | 2013 |
| Responsivity enhancement of a strained silicon field-effect transistor detector at 0.3 THz using the terajet effect IV Minin, OV Minin, J Salvador-Sánchez, JA Delgado-Notario, ... Optics letters 46 (13), 3061-3064, 2021 | 17 | 2021 |
| Strained silicon modulation field-effect transistor as a new sensor of terahertz radiation YM Meziani, E Garcia, E Velazquez, E Diez, A El Moutaouakil, T Otsuji, ... Semiconductor science and technology 26 (10), 105006, 2011 | 16 | 2011 |
Kristel FobeletsReader in microelectronics, Electrical Engineering, Imperial College LondonVerified email at imperial.ac.uk
