Tomás Palacios
Tomás Palacios
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Electronics based on two-dimensional materials
G Fiori, F Bonaccorso, G Iannaccone, T Palacios, D Neumaier, ...
Nature nanotechnology 9 (10), 768-779, 2014
18572014
Integrated Circuits Based on Bilayer MoS2 Transistors
H Wang, L Yu, YH Lee, Y Shi, A Hsu, ML Chin, LJ Li, M Dubey, J Kong, ...
Nano letters 12 (9), 4674-4680, 2012
14852012
Synthesis of monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition
KK Kim, A Hsu, X Jia, SM Kim, Y Shi, M Hofmann, D Nezich, ...
Nano letters 12 (1), 161-166, 2012
9182012
Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces
YH Lee, L Yu, H Wang, W Fang, X Ling, Y Shi, CT Lin, JK Huang, ...
Nano letters 13 (4), 1852-1857, 2013
5772013
Carbon-nanotube-embedded hydrogel sheets for engineering cardiac constructs and bioactuators
SR Shin, SM Jung, M Zalabany, K Kim, P Zorlutuna, S Kim, M Nikkhah, ...
ACS nano 7 (3), 2369-2380, 2013
5272013
Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics
L Yu, YH Lee, X Ling, EJG Santos, YC Shin, Y Lin, M Dubey, E Kaxiras, ...
Nano letters 14 (6), 3055-3063, 2014
4672014
High-power AlGaN/GaN HEMTs for ka-band applications
T Palacios, A Chakraborty, S Rajan, C Poblenz, S Keller, SP DenBaars, ...
IEEE Electron device letters 26 (11), 781-783, 2005
4462005
Synthesis and characterization of hexagonal boron nitride film as a dielectric layer for graphene devices
KK Kim, A Hsu, X Jia, SM Kim, Y Shi, M Dresselhaus, T Palacios, J Kong
ACS nano 6 (10), 8583-8590, 2012
4102012
AlGaN/GaN high electron mobility transistors with InGaN back-barriers
T Palacios, A Chakraborty, S Heikman, S Keller, SP DenBaars, UK Mishra
IEEE Electron device letters 27 (1), 13-15, 2005
4052005
Dielectric Screening of Excitons and Trions in Single-Layer MoS2
Y Lin, X Ling, L Yu, S Huang, AL Hsu, YH Lee, J Kong, MS Dresselhaus, ...
Nano letters 14 (10), 5569-5576, 2014
3972014
Graphene frequency multipliers
H Wang, D Nezich, J Kong, T Palacios
IEEE Electron Device Letters 30 (5), 547-549, 2009
3842009
The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
3302018
AlGaN/GaN HEMT With 300-GHz fmax
JW Chung, WE Hoke, EM Chumbes, T Palacios
Electron Device Letters, IEEE 31 (3), 195-197, 2010
3282010
Role of interfacial oxide in high-efficiency graphene–silicon Schottky barrier solar cells
Y Song, X Li, C Mackin, X Zhang, W Fang, T Palacios, H Zhu, J Kong
Nano letters 15 (3), 2104-2110, 2015
3122015
Graphene-based ambipolar RF mixers
H Wang, A Hsu, J Wu, J Kong, T Palacios
IEEE Electron Device Letters 31 (9), 906-908, 2010
2772010
Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application
A Nourbakhsh, A Zubair, MS Dresselhaus, T Palacios
Nano letters 16 (2), 1359-1366, 2016
2702016
Synthesis of large-area multilayer hexagonal boron nitride for high material performance
SM Kim, A Hsu, MH Park, SH Chae, SJ Yun, JS Lee, DH Cho, W Fang, ...
Nature communications 6 (1), 1-11, 2015
2602015
300-ghz inaln/gan hemts with ingan back barrier
DS Lee, X Gao, S Guo, D Kopp, P Fay, T Palacios
IEEE Electron Device Letters 32 (11), 1525-1527, 2011
2402011
MoS2 Field-Effect Transistor with Sub-10 nm Channel Length
A Nourbakhsh, A Zubair, RN Sajjad, A Tavakkoli KG, W Chen, S Fang, ...
Nano letters 16 (12), 7798-7806, 2016
2232016
BN/graphene/BN transistors for RF applications
H Wang, T Taychatanapat, A Hsu, K Watanabe, T Taniguchi, ...
IEEE Electron Device Letters 32 (9), 1209-1211, 2011
2142011
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