| Pixel level characterization of pinned photodiode and transfer gate physical parameters in CMOS image sensors V Goiffon, M Estribeau, J Michelot, P Cervantes, A Pelamatti, O Marcelot, ... IEEE Journal of the Electron Devices Society 2 (4), 65-76, 2014 | 58 | 2014 |
| Estimation and modeling of the full well capacity in pinned photodiode CMOS image sensors A Pelamatti, V Goiffon, M Estribeau, P Cervantes, P Magnan IEEE electron device letters 34 (7), 900-902, 2013 | 57 | 2013 |
| Temperature dependence and dynamic behavior of full well capacity in pinned photodiode CMOS image sensors A Pelamatti, JM Belloir, C Messien, V Goiffon, M Estribeau, P Magnan, ... IEEE transactions on electron devices 62 (4), 1200-1207, 2015 | 26 | 2015 |
| Comparison of pinning voltage estimation methods in pinned photodiode CMOS image sensors A Pelamatti, V Goiffon, A de Ipanema Moreira, P Magnan, C Virmontois, ... IEEE Journal of the Electron Devices Society 4 (2), 99-108, 2015 | 15 | 2015 |
| Dark current blooming in pinned photodiode CMOS image sensors JM Belloir, JB Lincelles, A Pelamatti, C Durnez, V Goiffon, C Virmontois, ... IEEE Transactions on Electron Devices 64 (3), 1161-1166, 2017 | 12 | 2017 |
| Charge transfer speed analysis in pinned photodiode CMOS image sensors based on a pulsed storage-gate method A Pelamatti, V Goiffon, A Chabane, P Magnan, C Virmontois, O Saint-Pé, ... 2015 45th European Solid State Device Research Conference (ESSDERC), 156-159, 2015 | 10 | 2015 |
| Charge Transfer Inefficiency in Pinned Photodiode CMOS image sensors: Simple Montecarlo modeling and experimental measurement based on a pulsed storage-gate method A Pelamatti, V Goiffon, A Chabane, P Magnan, C Virmontois, O Saint-Pé, ... Solid-State Electronics 125, 227-233, 2016 | 9 | 2016 |
| Estimation and modeling of key design parameters of pinned photodiode CMOS image sensors for high temporal resolution applications A Pelamatti Solid State Device Research Conference (ESSDERC), 2015 45th European, 2015 | 8 | 2015 |
| Absolute pinning voltage measurement: Comparison between In-pixel and JFET extraction methods A Pelamatti, V Goiffon, A De Ipanema, P Magnan, C Virmontois, ... Proc. Int. Image Sensor Workshop, 1-4, 2015 | 5 | 2015 |
| A rad-hard, global shutter, true HDR, backside illuminated image sensor B Dierickx, AK Kalgi, D Van Aken, A Klekachev, J Basteleus, P Stampoglis, ... Space & Scientific CMOS Image Sensors Workshop, Toulouse, 26-27, 2019 | 4 | 2019 |
| European low flux CMOS image sensor AK Kalgi, W Wang, B Dierickx, D Van Aken, K Wu, A Klekachev, G Ruttens, ... CNES workshop, Toulouse, 2017 | 4 | 2017 |
| On the pixel level estimation of pinning voltage, pinned photodiode capacitance and transfer gate channel potential V Goiffon, J Michelot, P Magnan, M Estribeau, O Marcelot, P Cervantes, ... | 4 | 2013 |
| Active pixels of transverse field detector based on a charge preamplifier G Langfelder, C Buffa, AF Longoni, A Pelamatti, F Zaraga Digital Photography VIII 8299, 52-57, 2012 | 4 | 2012 |
| Estimation et modélisation de paramètres clés des capteurs d’images CMOS à photodiode pincée pour applications à haute résolution temporelle A Pelamatti Toulouse, ISAE, 2015 | 3 | 2015 |
| Time-dependent internal quantum efficiency and diffusion modulation transfer function of N/P photodiodes C Peillon, M Estribeau, P Magnan, A Pelamatti, O Saint-Pé, ... Optical and Quantum Electronics 49, 1-14, 2017 | 1 | 2017 |
| Design and characterization of cmos active pixels with a tunable color space A Pelamatti Politecnico di Milano, 2010 | 1 | 2010 |
| Speed Analysis in Pinned Photodiode CMOS Image Sensors based on a Pulsed Storage-Gate Method A Pelamatti, V Goiffon, A Chabane, P Magnan, C Virmontois, O Saint-Pé, ... | | 2015 |
| Time-Dependent Modulation Transfer Function and Quantum Efficiency for a N/P Photodiode C Peillon, M Estribeau, P Magnan, O Saint-Pé, MB de Boisanger, ... | | |
