Manijeh Razeghi
Manijeh Razeghi
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Semiconductor ultraviolet detectors
M Razeghi, A Rogalski
Journal of Applied Physics 79 (10), 7433-7473, 1996
Room temperature quantum cascade lasers with 27% wall plug efficiency
Y Bai, N Bandyopadhyay, S Tsao, S Slivken, M Razeghi
Applied Physics Letters 98 (18), 2011
Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44<x<0.49) grown by liquid phase epitaxy, vapor phase epitaxy, and metal …
KH Goetz, D Bimberg, H Jürgensen, J Selders, AV Solomonov, ...
Journal of Applied Physics 54 (8), 4543-4552, 1983
QEPAS based ppb-level detection of CO and N2O using a high power CW DFB-QCL
Y Ma, R Lewicki, M Razeghi, FK Tittel
Optics Express 21 (1), 1008-1019, 2013
Short-wavelength solar-blind detectors-status, prospects, and markets
M Razeghi
Proceedings of the IEEE 90 (6), 1006-1014, 2002
Fundamentals of solid state engineering
M Razeghi
Springer, 2006
Narrow-gap semiconductor photodiodes
A Rogalski, M Razeghi
Photodetectors: Materials and Devices III 3287, 2-13, 1998
Dark current suppression in type II InAs∕ GaSb superlattice long wavelength infrared photodiodes with M-structure barrier
BM Nguyen, D Hoffman, PY Delaunay, M Razeghi
Applied Physics Letters 91 (16), 2007
The MOCVD Challenge: Volume 2: A Survey of GaInAsP-GaAs for photonic and electronic device applications
M Razeghi
CRC Press, 1995
High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN
D Walker, E Monroy, P Kung, J Wu, M Hamilton, FJ Sanchez, J Diaz, ...
Applied physics letters 74 (5), 762-764, 1999
AlGaN ultraviolet photoconductors grown on sapphire
D Walker, X Zhang, P Kung, A Saxler, S Javadpour, J Xu, M Razeghi
Applied Physics Letters 68 (15), 2100-2101, 1996
High quality AIN and GaN epilayers grown on (00⋅ 1) sapphire,(100), and (111) silicon substrates
P Kung, A Saxler, X Zhang, D Walker, TC Wang, I Ferguson, M Razeghi
Applied Physics Letters 66 (22), 2958-2960, 1995
Modeling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering
Y Wei, M Razeghi
Physical Review B 69 (8), 085316, 2004
Quantum cascade lasers that emit more light than heat
Y Bai, S Slivken, S Kuboya, SR Darvish, M Razeghi
Nature photonics 4 (2), 99-102, 2010
High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well
K Mayes, A Yasan, R McClintock, D Shiell, SR Darvish, P Kung, ...
Applied physics letters 84 (7), 1046-1048, 2004
Electroluminescence at 375nm from a ZnO∕ GaN: Mg∕ c-Al2O3 heterojunction light emitting diode
DJ Rogers, F Hosseini Teherani, A Yasan, K Minder, P Kung, M Razeghi
Applied physics letters 88 (14), 2006
Handbook of infrared detection technologies
M Henini, M Razeghi
Elsevier, 2002
Room temperature continuous wave operation of quantum cascade lasers with 12.5% wall plug efficiency
Y Bai, S Slivken, SR Darvish, M Razeghi
Applied Physics Letters 93 (2), 2008
Quantum cascade lasers: from tool to product
M Razeghi, QY Lu, N Bandyopadhyay, W Zhou, D Heydari, Y Bai, ...
Optics express 23 (7), 8462-8475, 2015
Solar-blind AlGaN photodiodes with very low cutoff wavelength
D Walker, V Kumar, K Mi, P Sandvik, P Kung, XH Zhang, M Razeghi
Applied Physics Letters 76 (4), 403-405, 2000
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