Maryline Bawedin
Maryline Bawedin
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A capacitorless 1T-DRAM on SOI based on dynamic coupling and double-gate operation
M Bawedin, S Cristoloveanu, D Flandre
IEEE Electron Device Letters 29 (7), 795-798, 2008
High-performance GaN-based nanochannel FinFETs with/without AlGaN/GaN heterostructure
KS Im, CH Won, YW Jo, JH Lee, M Bawedin, S Cristoloveanu, JH Lee
IEEE Transactions on Electron Devices 60 (10), 3012-3018, 2013
A new memory effect (MSD) in fully depleted SOI MOSFETs
M Bawedin, S Cristoloveanu, JG Yun, D Flandre
Solid-State Electronics 49 (9), 1547-1555, 2005
LDMOS in SOI technology with very-thin silicon film
M Bawedin, C Renaux, D Flandre
Solid-state electronics 48 (12), 2263-2270, 2004
A review of electrical characterization techniques for ultrathin FDSOI materials and devices
S Cristoloveanu, M Bawedin, I Ionica
Solid-State Electronics 117, 10-36, 2016
A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters
S Cristoloveanu, KH Lee, MS Parihar, H El Dirani, J Lacord, S Martinie, ...
Solid-State Electronics 143, 10-19, 2018
Innovating SOI memory devices based on floating-body effects
M Bawedin, S Cristoloveanu, D Flandre
Solid-State Electronics 51 (10), 1252-1262, 2007
Extended Analysis of the -FET: Operation as Capacitorless eDRAM
C Navarro, J Lacord, MS Parihar, F Adamu-Lema, M Duan, N Rodriguez, ...
IEEE Transactions on Electron Devices 64 (11), 4486-4491, 2017
Characteristics of GaN and AlGaN/GaN FinFETs
KS Im, HS Kang, JH Lee, SJ Chang, S Cristoloveanu, M Bawedin, JH Lee
Solid-state electronics 97, 66-75, 2014
Supercoupling effect in short-channel ultrathin fully depleted silicon-on-insulator transistors
C Navarro, M Bawedin, F Andrieu, B Sagnes, F Martinez, S Cristoloveanu
Journal of Applied Physics 118 (18), 2015
Floating-body SOI memory: Concepts, physics and challenges
M Bawedin, S Cristoloveanu, D Flandre, F Udrea
ECS Transactions 19 (4), 243, 2009
-FET as Capacitor-Less eDRAM Cell For High-Density Integration
C Navarro, M Duan, MS Parihar, F Adamu-Lema, S Coseman, J Lacord, ...
IEEE Transactions on Electron Devices 64 (12), 4904-4909, 2017
Experimental Demonstration of Operational Z2-FET Memory Matrix
S Navarro, C Navarro, C Marquez, H El Dirani, P Galy, M Bawedin, ...
IEEE Electron Device Letters 39 (5), 660-663, 2018
Thin film fully-depleted SOI four-gate transistors
K Akarvardar, S Cristoloveanu, M Bawedin, P Gentil, BJ Blalock, ...
Solid-State Electronics 51 (2), 278-284, 2007
Interface coupled photodetector (ICPD) with high photoresponsivity based on silicon-on-insulator substrate (SOI)
J Deng, J Shao, B Lu, Y Chen, A Zaslavsky, S Cristoloveanu, M Bawedin, ...
IEEE Journal of the Electron Devices Society 6, 557-564, 2018
Evidence of supercoupling effect in ultrathin silicon layers using a four-gate MOSFET
S Cristoloveanu, S Athanasiou, M Bawedin, P Galy
IEEE Electron Device Letters 38 (2), 157-159, 2016
Dynamic body potential variation in FD SOI MOSFETs operated in deep non-equilibrium regime: Model and applications
M Bawedin, S Cristoloveanu, D Flandre, F Udrea
Solid-state electronics 54 (2), 104-114, 2010
Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET
DH Son, YW Jo, V Sindhuri, KS Im, JH Seo, YT Kim, IM Kang, ...
Microelectronic Engineering 147, 155-158, 2015
Dimensional effects and scalability of Meta-Stable Dip (MSD) memory effect for 1T-DRAM SOI MOSFETs
A Hubert, M Bawedin, S Cristoloveanu, T Ernst
Solid-state electronics 53 (12), 1280-1286, 2009
Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition
T Cerba, M Martin, J Moeyaert, S David, JL Rouviere, L Cerutti, R Alcotte, ...
Thin Solid Films 645, 5-9, 2018
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