A capacitorless 1T-DRAM on SOI based on dynamic coupling and double-gate operation M Bawedin, S Cristoloveanu, D Flandre
IEEE Electron Device Letters 29 (7), 795-798, 2008
213 2008 High-performance GaN-based nanochannel FinFETs with/without AlGaN/GaN heterostructure KS Im, CH Won, YW Jo, JH Lee, M Bawedin, S Cristoloveanu, JH Lee
IEEE Transactions on Electron Devices 60 (10), 3012-3018, 2013
124 2013 A new memory effect (MSD) in fully depleted SOI MOSFETs M Bawedin, S Cristoloveanu, JG Yun, D Flandre
Solid-State Electronics 49 (9), 1547-1555, 2005
64 2005 A review of electrical characterization techniques for ultrathin FDSOI materials and devices S Cristoloveanu, M Bawedin, I Ionica
Solid-State Electronics 117, 10-36, 2016
61 2016 LDMOS in SOI technology with very-thin silicon film M Bawedin, C Renaux, D Flandre
Solid-state electronics 48 (12), 2263-2270, 2004
61 2004 A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters S Cristoloveanu, KH Lee, MS Parihar, H El Dirani, J Lacord, S Martinie, ...
Solid-State Electronics 143, 10-19, 2018
56 2018 Innovating SOI memory devices based on floating-body effects M Bawedin, S Cristoloveanu, D Flandre
Solid-State Electronics 51 (10), 1252-1262, 2007
51 2007 Extended Analysis of the C Navarro, J Lacord, MS Parihar, F Adamu-Lema, M Duan, N Rodriguez, ...
IEEE Transactions on Electron Devices 64 (11), 4486-4491, 2017
44 2017 Characteristics of GaN and AlGaN/GaN FinFETs KS Im, HS Kang, JH Lee, SJ Chang, S Cristoloveanu, M Bawedin, JH Lee
Solid-state electronics 97, 66-75, 2014
42 2014 Supercoupling effect in short-channel ultrathin fully depleted silicon-on-insulator transistors C Navarro, M Bawedin, F Andrieu, B Sagnes, F Martinez, S Cristoloveanu
Journal of Applied Physics 118 (18), 2015
40 2015 Floating-body SOI memory: Concepts, physics and challenges M Bawedin, S Cristoloveanu, D Flandre, F Udrea
ECS Transactions 19 (4), 243, 2009
40 2009 C Navarro, M Duan, MS Parihar, F Adamu-Lema, S Coseman, J Lacord, ...
IEEE Transactions on Electron Devices 64 (12), 4904-4909, 2017
35 2017 Evidence of supercoupling effect in ultrathin silicon layers using a four-gate MOSFET S Cristoloveanu, S Athanasiou, M Bawedin, P Galy
IEEE Electron Device Letters 38 (2), 157-159, 2016
32 2016 Thin film fully-depleted SOI four-gate transistors K Akarvardar, S Cristoloveanu, M Bawedin, P Gentil, BJ Blalock, ...
Solid-State Electronics 51 (2), 278-284, 2007
32 2007 Interface coupled photodetector (ICPD) with high photoresponsivity based on silicon-on-insulator substrate (SOI) J Deng, J Shao, B Lu, Y Chen, A Zaslavsky, S Cristoloveanu, M Bawedin, ...
IEEE Journal of the Electron Devices Society 6, 557-564, 2018
31 2018 Experimental Demonstration of Operational Z2 -FET Memory Matrix S Navarro, C Navarro, C Marquez, H El Dirani, P Galy, M Bawedin, ...
IEEE Electron Device Letters 39 (5), 660-663, 2018
29 2018 Dynamic body potential variation in FD SOI MOSFETs operated in deep non-equilibrium regime: Model and applications M Bawedin, S Cristoloveanu, D Flandre, F Udrea
Solid-state electronics 54 (2), 104-114, 2010
28 2010 Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET DH Son, YW Jo, V Sindhuri, KS Im, JH Seo, YT Kim, IM Kang, ...
Microelectronic Engineering 147, 155-158, 2015
26 2015 Dimensional effects and scalability of Meta-Stable Dip (MSD) memory effect for 1T-DRAM SOI MOSFETs A Hubert, M Bawedin, S Cristoloveanu, T Ernst
Solid-state electronics 53 (12), 1280-1286, 2009
24 2009 Mobility investigation by geometrical magnetoresistance in fully depleted MOSFETs and FinFETs SJ Chang, M Bawedin, S Cristoloveanu
IEEE Transactions on Electron Devices 61 (6), 1979-1986, 2014
23 2014 
Cristoloveanu, SorinGrenoble INPAdresse e-mail validée de grenoble-inp.fr
