| GaN growth on Si (111) substrate using oxidized AlAs as an intermediate layer NP Kobayashi, JT Kobayashi, PD Dapkus, WJ Choi, AE Bond, X Zhang, ... Applied physics letters 71 (24), 3569-3571, 1997 | 107 | 1997 |
| Photoemission and scanning-tunneling-microscopy study of GaSb (100) GE Franklin, DH Rich, A Samsavar, ES Hirschorn, FM Leibsle, T Miller, ... Physical Review B 41 (18), 12619, 1990 | 86 | 1990 |
| Possibility of charge transfer between dimer atoms on Si (100)-(2× 1) DH Rich, T Miller, TC Chiang Physical Review B 37 (6), 3124, 1988 | 80 | 1988 |
| Adsorption and interaction of Sb on Si (001) studied by scanning tunneling microscopy and core-level photoemission DH Rich, FM Leibsle, A Samsavar, ES Hirschorn, T Miller, TC Chiang Physical Review B 39 (17), 12758, 1989 | 77 | 1989 |
| Sb-induced bulk band transitions in Si (111) and Si (001) observed in synchrotron photoemission studies DH Rich, T Miller, GE Franklin, TC Chiang Physical Review B 39 (2), 1438, 1989 | 77 | 1989 |
| Lateral epitaxy overgrowth of GaN with NH3 flow rate modulation X Zhang, PD Dapkus, DH Rich Applied Physics Letters 77 (10), 1496-1498, 2000 | 66 | 2000 |
| Synchrotron photoemission studies of the Sb-passivated Si surfaces: Degenerate doping and bulk band dispersions DH Rich, GE Franklin, FM Leibsle, T Miller, TC Chiang Physical Review B 40 (17), 11804, 1989 | 66 | 1989 |
| Interface formation and growth of InSb on Si (100) GE Franklin, DH Rich, H Hong, T Miller, TC Chiang Physical Review B 45 (7), 3426, 1992 | 65 | 1992 |
| Carrier relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence X Zhang, DH Rich, JT Kobayashi, NP Kobayashi, PD Dapkus Applied physics letters 73 (10), 1430-1432, 1998 | 61 | 1998 |
| Coordination determination of In on Si (100) from synchrotron photoemission studies DH Rich, A Samsavar, T Miller, HF Lin, TC Chiang, JE Sundgren, ... Physical review letters 58 (6), 579-582, 1987 | 61 | 1987 |
| Epitaxial lateral overgrowth of GaN over AlOx surface formed on Si substrate NP Kobayashi, JT Kobayashi, X Zhang, PD Dapkus, DH Rich Applied physics letters 74 (19), 2836-2838, 1999 | 57 | 1999 |
| Self-assembled InAs/GaAs quantum dots studied with excitation dependent cathodoluminescence Y Tang, DH Rich, I Mukhametzhanov, P Chen, A Madhukar Journal of applied physics 84 (6), 3342-3348, 1998 | 54 | 1998 |
| Temperature dependence of excitonic recombination in lateral epitaxially overgrown InGaN/GaN quantum wells studied with cathodoluminescence S Khatsevich, DH Rich, X Zhang, W Zhou, PD Dapkus Journal of applied physics 95 (4), 1832-1842, 2004 | 52 | 2004 |
| In-situ fabrication of three-dimensionally confined GaAs and InAs volumes via growth on non-planar patterned GaAs (001) substrates A Konkar, KC Rajkumar, Q Xie, P Chen, A Madhukar, HT Lin, DH Rich Journal of crystal growth 150, 311-316, 1995 | 50 | 1995 |
| A One-step, Template-free Synthesis, Characterization, Optical and Magnetic Properties of Zn1− x Mn x Te Nanosheets S Bhattacharyya, D Zitoun, Y Estrin, O Moshe, DH Rich, A Gedanken Chemistry of Materials 21 (2), 326-335, 2008 | 43 | 2008 |
| Carrier relaxation and recombination in GaAs/AlGaAs quantum heterostructures and nanostructures probed with time-resolved cathodoluminescence HT Lin, DH Rich, A Konkar, P Chen, A Madhukar Journal of applied physics 81 (7), 3186-3195, 1997 | 43 | 1997 |
| Polarized-cathodoluminescence study of uniaxial and biaxial stress in GaAs/Si DH Rich, A Ksendzov, RW Terhune, FJ Grunthaner, BA Wilson, H Shen, ... Physical Review B 43 (8), 6836, 1991 | 43 | 1991 |
| Electronic and chemical properties of In and Sb adsorbed on Ge (100) studied by synchrotron photoemission DH Rich, T Miller, TC Chiang Physical Review B 41 (5), 3004, 1990 | 43 | 1990 |
| Adsorption and growth of Sn on Si (100) from synchrotron photoemission studies DH Rich, T Miller, A Samsavar, HF Lin, TC Chiang Physical Review B 37 (17), 10221, 1988 | 43 | 1988 |
| Optically active three‐dimensionally confined structures realized via molecular beam epitaxical growth on nonplanar GaAs (111) B KC Rajkumar, A Madhukar, K Rammohan, DH Rich, P Chen, L Chen Applied physics letters 63 (21), 2905-2907, 1993 | 41 | 1993 |
Yevgeni EstrinDepartment of Physics, Ben-Gurion University of the Negev, Beer-Sheva, IsraelAdresse e-mail validée de post.bgu.ac.il
