Sandrine Bernardini
Sandrine Bernardini
Associate Professor, Aix Marseille Université
Adresse e-mail validée de
Citée par
Citée par
UV-enhanced ozone gas sensing response of ZnO-SnO2 heterojunctions at room temperature
LF da Silva, JC M’peko, AC Catto, S Bernardini, VR Mastelaro, K Aguir, ...
Sensors and Actuators B: Chemical 240, 573-579, 2017
Ozone flexible sensors fabricated by photolithography and laser ablation processes based on ZnO nanoparticles
M Acuautla, S Bernardini, L Gallais, T Fiorido, L Patout, M Bendahan
Sensors and Actuators B: Chemical 203, 602-611, 2014
An easy method of preparing ozone gas sensors based on ZnO nanorods
AC Catto, LF Da Silva, C Ribeiro, S Bernardini, K Aguir, E Longo, ...
Rsc advances 5 (25), 19528-19533, 2015
Local Structure and Surface Properties of CoxZn1–xO Thin Films for Ozone Gas Sensing
AC Catto, LF Silva, MIB Bernardi, S Bernardini, K Aguir, E Longo, ...
ACS applied materials & interfaces 8 (39), 26066-26072, 2016
Highly selective ozone gas sensor based on nanocrystalline Zn0. 95Co0. 05O thin film obtained via spray pyrolysis technique
YJ Onofre, AC Catto, S Bernardini, T Fiorido, K Aguir, E Longo, ...
Applied Surface Science 478, 347-354, 2019
One-Dimensional V2O5/TiO2 Heterostructures for Chemiresistive Ozone Sensors
W Avansi Jr, AC Catto, LF da Silva, T Fiorido, S Bernardini, VR Mastelaro, ...
ACS Applied Nano Materials 2 (8), 4756-4764, 2019
Ozone and nitrogen dioxide gas sensor based on a nanostructured SrTi0. 85Fe0. 15O3 thin film
LF Da Silva, VR Mastelaro, AC Catto, CA Escanhoela Jr, S Bernardini, ...
Journal of Alloys and Compounds 638, 374-379, 2015
Energy state distributions of the Pb centers at the (100),(110), and (111) Si∕ SiO2 interfaces investigated by Laplace deep level transient spectroscopy
L Dobaczewski, S Bernardini, P Kruszewski, PK Hurley, VP Markevich, ...
Applied Physics Letters 92 (24), 2008
Microfluidic gas sensor with integrated pumping system
V Martini, S Bernardini, M Bendahan, K Aguir, P Perrier, I Graur
Sensors and Actuators B: Chemical 170, 45-50, 2012
Analytical model of the effects of a nonuniform distribution of stored charge on the electrical characteristics of discrete-trap nonvolatile memories
L Perniola, S Bernardini, G Iannaccone, P Masson, B De Salvo, ...
IEEE transactions on nanotechnology 4 (3), 360-368, 2005
The impact of negative-bias-temperature-instability on the carrier generation lifetime of metal-oxynitride-silicon capacitors
SN Volkos, ES Efthymiou, S Bernardini, ID Hawkins, AR Peaker, G Petkos
Journal of applied physics 100 (12), 2006
Trends in metal oxide thin films: Synthesis and applications of tin oxide
K Aguir, S Bernardini, B Lawson, T Fiorido
Tin oxide materials, 219-246, 2020
BTEX gas sensor based on hematite microrhombuses
LF da Silva, AC Catto, S Bernardini, T Fiorido, JVN de Palma, W Avansi Jr, ...
Sensors and Actuators B: Chemical 326, 128817, 2021
All solution processed flexible ammonia gas and light sensors based on α, ω-hexyl-distyrylbithiophene films
T Fiorido, M Bendahan, K Aguir, S Bernardini, C Martini, H Brisset, ...
Sensors and Actuators B: Chemical 151 (1), 77-82, 2010
Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF hydrogen and deuterium plasma treatment
E Efthymiou, S Bernardini, JF Zhang, SN Volkos, B Hamilton, AR Peaker
Thin Solid Films 517 (1), 207-208, 2008
Reliability nano-characterization of thin SiO2 and HfSixOy/SiO2 gate stacks
E Efthymiou, S Bernardini, SN Volkos, B Hamilton, JF Zhang, HJ Uppal, ...
Microelectronic engineering 84 (9-10), 2290-2293, 2007
A new floating gate compact model applied to flash memory cell
R Laffont, P Masson, S Bernardini, R Bouchakour, JM Mirabel
Journal of non-crystalline solids 322 (1-3), 250-255, 2003
Study of trap centres in silicon nanocrystal memories
A Souifi, P Brounkov, S Bernardini, C Busseret, L Militaru, G Guillot, ...
Materials Science and Engineering: B 102 (1-3), 99-107, 2003
Ammonia detection by a novel Pyrex microsystem based on thermal creep phenomenon
V Martini-Laithier, I Graur, S Bernardini, K Aguir, P Perrier, M Bendahan
Sensors and Actuators B: Chemical 192, 714-719, 2014
Modélisation des structures Metal-Oxyde-Semiconducteur (MOS): Applications aux dispositifs mémoires
S Bernardini
Université de Provence-Aix-Marseille I, 2004
Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.
Articles 1–20