| PCMO based RRAM and NPN Bipolar Selector as Synapse for Energy Efficient STDP UG Sandip Lashkare, Neeraj Panwar, Pankaj Kumbhare, Bhaskar Das IEEE EDL, 2017 | 49* | 2017 |
| Ultra-Low Energy LIF Neuron Using Si NIPIN Diode for Spiking Neural Networks UG Bhaskar Das, Jörg Schulze IEEE Electron Device Letters, 2018 | 32 | 2018 |
| Effect of Cr doping on the ac electrical properties of MgAl2O4 nanoparticles S Saha, B Das, N Mazumder, A Bharati, KK Chattopadhyay Journal of sol-gel science and technology 61, 518-526, 2012 | 13 | 2012 |
| High performance triangular barrier engineered NIPIN selector for bipolar RRAM UG R. Meshram , B. Das , R. Mandapati , S. Lashkare , S. Deshmukh , S. Lodha ... International Memory Workshop (IMW) , 2014, 2014 | 10* | 2014 |
| Sub-0.2 V impact ionization in Si nipin diode B Das, S Sushama, J Schulze, U Ganguly IEEE Transactions on Electron Devices 63 (12), 4668-4673, 2016 | 8 | 2016 |
| Observation of impact ionization at sub-0.5V and resultant improvement in ideality in I-NPN selector device by Si epitaxy for RRAM applications B. Das , R. Meshram , V. Ostwal , J. Schulze , U.Ganguly Device Research Conference (DRC) 2014, 2014 | 6* | 2014 |
| PrxCa1-xMnO3-Based Memory and Si Time-Keeping Selector for Area and Energy Efficient Synapse B Das, A Lele, P Kumbhare, J Schulze, U Ganguly IEEE Electron Device Letters 40 (6), 850-853, 2019 | 4 | 2019 |
| Transient phenomena in sub-bandgap impact ionization in Si nipin diode B Das, J Schulze, U Ganguly IEEE Transactions on Electron Devices 65 (8), 3414-3420, 2018 | 4 | 2018 |
| High performance sub-430°C epitaxial silicon PIN selector for 3D RRAM UG R. Mandapati , S. Shrivastava , B. Das , Sushama , V. Ostwal , J. Schulze Device Research Conference (DRC), 2014, 2014 | 3* | 2014 |
| Voltage Designability: An enabler for selector technology R Mandapati, B Das, V Ostwal, U Ganguly Non-Volatile Memory Technology Symposium (NVMTS), 2014, 1-4, 2014 | 2 | 2014 |
| An Asymmetrically Doped Vertical Si Biristor With Sub-1-V Operation B Das, J Schulze, U Ganguly IEEE TED 68 (8, Aug. 2021), 3728 - 3733, 2021 | 1 | 2021 |
| Circuit Cost Reduction for Online STDP using NIPIN Selector as Timekeeping Device in RRAM Synapse AS Lele, A Naik, L Bandhu, B Das, U Ganguly 2020 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2020 | 1 | 2020 |
| Low Temperature Epitaxial Germanium P+IN+IP+ Selector for RRAM V. S. Senthil Srinivasan , B. Das , V. Sangwan , C. Pinto Gómez , M. Oehme ... Device Research Conference (DRC-2015), 2015 | 1* | 2015 |
| Effect of Delta-p Doping and i-Region Length Scaling on Ion/Ioff in Si NIPIN Diode for Selector Application B Das, J Schulze, U Ganguly The Physics of Semiconductor Devices: Proceedings of IWPSD 2017, 671-674, 2019 | | 2019 |
| Transient Phenomena in Sub-Bandgap Impact Ionization in Si n-i-p-i-n Diode UG Bhaskar Das , Jörg Schulze IEEE TRANSACTIONS ON ELECTRON DEVICES 65 (8), 3414 - 3420, 2018 | | 2018 |
| Effect of Delta-p Doping and i-region Length Scaling on Ion/Ioff in Si NIPIN Diode for Selector Application UG Bhaskar Das, J. Scheulze IWPSD 2017, 2017 | | 2017 |
| Sub-0.2 V Impact Ionization in Si n-i-p-i-n Diode UG B. Das, Sushama, J. Schulze IEEE Transactions on Electron Devices 63 (12), 4668 - 4673, 2016 | | 2016 |
| Sub bandgap impact ionization in Si nipin selector diode and its applications B Das Mumbai, 0 | | |
Udayan GangulyProfessor, Electrical Engineering, IIT BombayAdresse e-mail validée de ee.iitb.ac.in
