Anupam Roy
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Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy
A Roy, HCP Movva, B Satpati, K Kim, R Dey, A Rai, T Pramanik, ...
ACS applied materials & interfaces 8 (11), 7396-7402, 2016
1382016
Air stable doping and intrinsic mobility enhancement in monolayer molybdenum disulfide by amorphous titanium suboxide encapsulation
A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ...
Nano letters 15 (7), 4329-4336, 2015
1352015
Two-dimensional weak anti-localization in Bi2Te3 thin film grown on Si(111)-(7 × 7) surface by molecular beam epitaxy
A Roy, S Guchhait, S Sonde, R Dey, T Pramanik, A Rai, HCP Movva, ...
Applied Physics Letters 102 (16), 163118, 2013
612013
Progress in contact, doping and mobility engineering of MoS2: An atomically thin 2D semiconductor
A Rai, H Movva, A Roy, D Taneja, S Chowdhury, S Banerjee
Crystals 8 (8), 316, 2018
592018
A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
CC Hsieh, A Roy, YF Chang, D Shahrjerdi, SK Banerjee
Applied Physics Letters 109 (22), 223501, 2016
522016
Perpendicular magnetic anisotropy and spin glass-like behavior in molecular beam epitaxy grown chromium telluride thin films
A Roy, S Guchhait, R Dey, T Pramanik, CC Hsieh, A Rai, SK Banerjee
ACS nano 9 (4), 3772-3779, 2015
392015
Characteristics and mechanism study of cerium oxide based random access memories
CC Hsieh, A Roy, A Rai, YF Chang, SK Banerjee
Applied Physics Letters 106 (17), 173108, 2015
332015
Strong spin-orbit coupling and Zeeman spin splitting in angle dependent magnetoresistance of Bi2Te3
R Dey, T Pramanik, A Roy, A Rai, S Guchhait, S Sonde, HCP Movva, ...
Applied Physics Letters 104 (22), 223111, 2014
282014
Experimental evidence of exciton capture by mid-gap defects in CVD grown monolayer MoSe 2
K Chen, R Ghosh, X Meng, A Roy, JS Kim, F He, SC Mason, X Xu, JF Lin, ...
npj 2D Materials and Applications 1 (1), 1-8, 2017
242017
Nanodot to nanowire: A strain-driven shape transition in self-organized endotaxial CoSi2 on Si(100)
JC Mahato, D Das, RR Juluri, R Batabyal, A Roy, PV Satyam, BN Dev
Applied Physics Letters 100 (26), 263117, 2012
222012
Interfacial-oxygen-vacancy mediated doping of MoS2by high-κ dielectrics
A Rai, A Valsaraj, HCP Movva, A Roy, E Tutuc, LF Register, SK Banerjee
2015 73rd Annual Device Research Conference (DRC), 189-190, 2015
212015
Interfacial-oxygen-vacancy mediated doping of MoS2by high-κ dielectrics
A Rai, A Valsaraj, HCP Movva, A Roy, E Tutuc, LF Register, SK Banerjee
2015 73rd Annual Device Research Conference (DRC), 189-190, 2015
212015
Surface roughness of ion-bombarded Si (1 0 0) surfaces: roughening and smoothing with the same roughness exponent
A Roy, K Bhattacharjee, HP Lenka, DP Mahapatra, BN Dev
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2008
212008
Carrier trapping by oxygen impurities in molybdenum diselenide
K Chen, A Roy, A Rai, A Valsaraj, X Meng, F He, X Xu, LF Register, ...
ACS applied materials & interfaces 10 (1), 1125-1131, 2018
182018
Formation of aligned nanosilicide structures in a MBE-grown Au/Si (110) system: a real-time temperature-dependent TEM study
UM Bhatta, JK Dash, A Roy, A Rath, PV Satyam
Journal of Physics: Condensed Matter 21 (20), 205403, 2009
172009
Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy
T Pramanik, A Roy, R Dey, A Rai, S Guchhait, HCP Movva, CC Hsieh, ...
Journal of Magnetism and Magnetic Materials 437, 72-77, 2017
142017
Large area chemical vapor deposition growth of monolayer MoSe2 and its controlled sulfurization to MoS2
R Ghosh, JS Kim, A Roy, H Chou, M Vu, SK Banerjee, D Akinwande
Journal of Materials Research 31 (7), 917, 2016
142016
Short-Term Relaxation in HfOx/CeOx Resistive Random Access Memory With Selector
CC Hsieh, YF Chang, Y Jeon, A Roy, D Shahrjerdi, SK Banerjee
IEEE Electron Device Letters 38 (7), 871-874, 2017
132017
Electronic structure of Ag-adsorbed nanowire-like stripes on Si (110)−(16× 2) surfaces. I. An in situ STM and STS experiment
K Bhattacharjee, A Roy, K Kundu, BN Dev
Physical Review B 77 (11), 115430, 2008
132008
Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides
K Chen, A Roy, A Rai, HCP Movva, X Meng, F He, SK Banerjee, Y Wang
APL Materials 6 (5), 056103, 2018
122018
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