A rhombohedral ferroelectric phase in epitaxially-strained Hf0. 5Zr0. 5O2 thin films Y Wei, P Nukala, M Salverda, S Matzen, HJ Zhao, J Momand, A Everhardt, ...
Nature Materials 17, 1095–1100, 2018
393 2018 Reversible oxygen migration and phase transitions in hafnia-based ferroelectric devices P Nukala, M Ahmadi, Y Wei, S De Graaf, E Stylianidis, T Chakrabortty, ...
Science 372 (6542), 630-635, 2021
179 2021 Direct Epitaxial Growth of Polar (1 – x )HfO2 –(x )ZrO2 Ultrathin Films on Silicon P Nukala, J Antoja-Lleonart, Y Wei, L Yedra, B Dkhil, B Noheda
ACS applied electronic materials 1 (12), 2585-2593, 2019
72 2019 Magnetic Tunnel Junctions Based on Ferroelectric Y Wei, S Matzen, T Maroutian, G Agnus, M Salverda, P Nukala, Q Chen, ...
Physical Review Applied 12 (3), 031001, 2019
59 2019 Guidelines for the stabilization of a polar rhombohedral phase in epitaxial Hf0.5 Zr0.5 O2 thin films P Nukala, Y Wei, V de Haas, Q Guo, J Antoja-Lleonart, B Noheda
Ferroelectrics 569 (1), 148-163, 2020
46 2020 Magneto-ionic control of spin polarization in multiferroic tunnel junctions Y Wei, S Matzen, CP Quinteros, T Maroutian, G Agnus, P Lecoeur, ...
npj Quantum Materials 4 (1), 62, 2019
37 2019 Structure and magnetic properties of the perovskite YCo0. 5Fe0. 5O3 Y Wei, H Gui, Z Zhao, J Li, Y Liu, S Xin, X Li, W Xie
AIP Advances 4 (12), 2014
35 2014 A stable rhombohedral phase in ferroelectric Hf(Zr)1+ x 2 capacitor with ultralow coercive field Y Wang, L Tao, R Guzman, Q Luo, W Zhou, Y Yang, Y Wei, Y Liu, P Jiang, ...
Science 381 (6657), 558-563, 2023
34 2023 The effect of hydrogen ordering on the electronic and magnetic properties of the strontium vanadium oxyhydride Y Wei, H Gui, X Li, Z Zhao, YH Zhao, W Xie
Journal of Physics: Condensed Matter 27 (20), 206001, 2015
20 2015 In situ heating studies on temperature-induced phase transitions in epitaxial Hf0. 5Zr0. 5O2/La0. 67Sr0. 33MnO3 heterostructures P Nukala, M Ahmadi, J Antoja-Lleonart, S Graaf, Y Wei, HW Zandbergen, ...
Applied Physics Letters 118 (6), 2021
16 2021 Strain Relaxation in “2D/2D and 2D/3D Systems”: Highly Textured Mica/Bi2 Te3 , Sb2 Te3 /Bi2 Te3 , and Bi2 Te3 /GeTe Heterostructures H Zhang, DT Yimam, S de Graaf, J Momand, PA Vermeulen, Y Wei, ...
ACS nano 15 (2), 2869-2879, 2021
16 2021 Synaptic behaviour in ferroelectric epitaxial rhombohedral Hf0. 5Zr0. 5O2 thin films Y Wei, G Vats, B Noheda
Neuromorphic Computing and Engineering 2 (4), 044007, 2022
9 2022 npj Quantum Mater. 4, 62 (2019) Y Wei, S Matzen, CP Quinteros, T Maroutian, G Agnus, P Lecoeur, ...
5 Direct observation of reversible oxygen migration and phase transitions in ferroelectric Hf0. 5Zr0. 5O2 thin-film devices P Nukala, M Ahmadi, S de Graaf, BJ Kooi, B Noheda, H Zandbergen, ...
Microscopy and Microanalysis 27 (S1), 956-959, 2021
4 2021 Operando Observation of Reversible Oxygen Migration and Phase Transitions in Hafnia-based Ferroelectric Devices P Nukala, M Ahmadi, Y Wei, S de Graaf, E Stylianidis, T Chakrabortty, ...
Microscopy and Microanalysis 28 (S1), 2268-2269, 2022
2 2022 First-principle investigations of K2NiF4-type double perovskite oxides La4B′ B ″O8 (B′ B ″= Fe, Co, Ni) H Mao, Y Wei, H Gui, X Li, Z Zhao, W Xie
Journal of Applied Physics 115 (21), 2014
2 2014 Investigating the Electromechanical Behavior of Unconventionally Ferroelectric Hf0.5 Zr0.5 O2 ‐Based Capacitors Through Operando Nanobeam X‐Ray Diffraction E Stylianidis, P Surabhi, R Hamming‐Green, M Salverda, Y Wei, ...
Advanced Electronic Materials 9 (6), 2201298, 2023
1 2023 Multi-state nonvolatile capacitances in HfO2-based ferroelectric capacitor for neuromorphic computing S Wu, X Zhang, R Cao, K Zhou, J Lu, C Li, Y Yang, D Shang, Y Wei, ...
Applied Physics Letters 124 (10), 2024
2024 Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf0.5 Zr0.5 O2 thin films by thermal atomic layer deposition S Wu, R Cao, H Jiang, Y Li, X Zhang, Y Yang, Y Wang, Y Wei, Q Liu
Journal of Semiconductors 45 (3), 032301-1-032301-5, 2024
2024 Rhombohedral Hf0. 5Zr0. 5O2 thin films: Ferroelectricity and devices Y Wei
2020 