First demonstration of vertically stacked gate-all-around highly strained germanium nanowire pFETs E Capogreco, L Witters, H Arimura, F Sebaai, C Porret, A Hikavyy, R Loo, ...
IEEE Transactions on Electron Devices 65 (11), 5145-5150, 2018
67 2018 Processing technologies for advanced Ge devices R Loo, AY Hikavyy, L Witters, A Schulze, H Arimura, D Cott, J Mitard, ...
ECS Journal of Solid State Science and Technology 6 (1), P14, 2016
58 * 2016 Controlling water intercalation is key to a direct graphene transfer K Verguts, K Schouteden, CH Wu, L Peters, N Vrancken, X Wu, Z Li, ...
ACS applied materials & interfaces 9 (42), 37484-37492, 2017
56 2017 Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration C Porret, A Hikavyy, JFG Granados, S Baudot, A Vohra, B Kunert, ...
ECS Journal of Solid State Science and Technology 8 (8), P392, 2019
35 2019 Structure and magnetism of Ge3Mn5 clusters A Jain, M Jamet, A Barski, T Devillers, IS Yu, C Porret, ...
Journal of Applied Physics 109 (1), 2011
32 2011 Advantage of NW structure in preservation of SRB-induced strain and investigation of off-state leakage in strained stacked Ge NW pFET H Arimura, G Eneman, E Capogreco, L Witters, A De Keersgieter, P Favia, ...
2018 IEEE International Electron Devices Meeting (IEDM), 21.2. 1-21.2. 4, 2018
26 2018 Strain and correlation of self-organized S Tardif, V Favre-Nicolin, F Lançon, E Arras, M Jamet, A Barski, C Porret, ...
Physical Review B 82 (10), 104101, 2010
26 2010 Electrical properties of extended defects in strain relaxed GeSn S Gupta, E Simoen, R Loo, Y Shimura, C Porret, F Gencarelli, K Paredis, ...
Applied Physics Letters 113 (2), 2018
23 2018 High absorption contrast quantum confined Stark effect in ultra-thin Ge/SiGe quantum well stacks grown on Si SA Srinivasan, C Porret, E Vissers, P Favia, J De Coster, H Bender, R Loo, ...
IEEE Journal of Quantum Electronics 56 (1), 1-7, 2019
21 2019 60Gb/s waveguide-coupled O-band GeSi quantum-confined Stark effect electro-absorption modulator SA Srinivasan, C Porret, S Balakrishnan, Y Ban, R Loo, P Verheyen, ...
Optical Fiber Communication Conference, Tu1D. 3, 2021
18 2021 Investigation of Cl2 etch in view of extremely low temperature selective epitaxial processes A Hikavyy, A Kruv, T Van Opstal, B De Vos, C Porret, R Loo
Semiconductor Science and Technology 32 (11), 114006, 2017
18 2017 Low temperature epitaxial growth of Ge: B and Ge0. 99Sn0. 01: B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no … A Vohra, C Porret, D Kohen, S Folkersma, J Bogdanowicz, M Schaekers, ...
Japanese Journal of Applied Physics 58 (SB), SBBA04, 2019
17 2019 Investigation of magnetic anisotropy of (Ge, Mn) nanocolumns A Jain, M Jamet, A Barski, T Devillers, C Porret, P Bayle-Guillemaud, ...
Applied Physics Letters 97 (20), 2010
17 2010 High performance strained Germanium Gate All Around p-channel devices with excellent electrostatic control for sub-Jtlnm LG E Capogreco, H Arimura, L Witters, A Vohra, C Porret, R Loo, ...
2019 Symposium on VLSI Technology, T94-T95, 2019
13 2019 Toward high-performance and reliable Ge channel devices for 2 nm node and beyond H Arimura, E Capogreco, A Vohra, C Porret, R Loo, E Rosseel, A Hikavyy, ...
2020 IEEE International Electron Devices Meeting (IEDM), 2.1. 1-2.1. 4, 2020
12 2020 Importance of kinetics effects in the growth of germanium nanowires by vapour–liquid–solid Molecular Beam Epitaxy C Porret, T Devillers, A Jain, R Dujardin, A Barski
Journal of crystal growth 323 (1), 334-339, 2011
12 2011 Wafer‐scale Ge epitaxial foils grown at high growth rates and released from porous substrates for triple‐junction solar cells V Depauw, C Porret, M Moelants, E Vecchio, K Kennes, H Han, R Loo, ...
Progress in Photovoltaics: Research and Applications 31 (12), 1315-1328, 2023
11 2023 Contact resistivity of highly doped Si: P, Si: As, and Si: P: As Epi layers for source/drain epitaxy E Rosseel, C Porret, AY Hikavyy, R Loo, M Tirrito, B Douhard, O Richard, ...
ECS Transactions 98 (5), 37, 2020
11 2020 Epitaxial growth of Ga-doped SiGe for reduction of contact resistance in finFET source/drain materials J Margetis, D Kohen, C Porret, L Lima, R Khazaka, G Rengo, R Loo, ...
ECS Transactions 93 (1), 7, 2019
11 2019 Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1− xSnx and SiyGe1− x− ySnx A Vohra, I Makkonen, G Pourtois, J Slotte, C Porret, E Rosseel, A Khanam, ...
ECS Journal of Solid State Science and Technology 9 (4), 044010, 2020
10 2020 