Achour SAADOUNE
Achour SAADOUNE
Maître de conférences, Electronique, Université de Biskra
Adresse e-mail validée de univ-biskra.dz - Page d'accueil
TitreCitée parAnnée
Modelling of semiconductor diodes made of high defect concentration, irradiated, high resistivity and semi-insulating material: The capacitance–voltage characteristics
A Saadoune, L Dehimi, N Sengouga, M McPherson, BK Jones
Solid-state electronics 50 (7-8), 1178-1182, 2006
232006
Inhomogeneous barrier height effect on the current–voltage characteristics of an Au/n-InP Schottky diode
K Zeghdar, L Dehimi, A Saadoune, N Sengouga
Journal of Semiconductors 36 (12), 124002, 2015
62015
Modeling of Semiconductor Detectors Made of Defect-Engineered Silicon: The Effective Space Charge Density
A Saadoune, SJ Moloi, K Bekhouche, L Dehimi, M McPherson, ...
IEEE Transactions on Device and Materials Reliability 13 (1), 1-8, 2013
52013
Analysis of the Forward IV Characteristics of Al-Implanted 4H-SiC p-i-n Diodes with Modeling of Recombination and Trapping Effects Due to Intrinsic and …
ML Megherbi, F Pezzimenti, L Dehimi, A Saadoune, FG Della Corte
Journal of Electronic Materials 47 (2), 1414-1420, 2018
42018
Investigation on the non-ideal behaviour of Au/n-InP Schottky diodes by the simulation of IVT and CVT characteristics
A Fritah, A Saadoune, L Dehimi, B Abay
Philosophical Magazine 96 (19), 2009-2026, 2016
42016
Effects of the TiO2 high-k insulator material on the electrical characteristics of GaAs based Schottky barrier diodes
S Zellag, L Dehimi, T Asar, A Saadoune, A Fritah, S Özçelik
Applied Physics A 124 (1), 84, 2018
12018
Traps effect on the IVT characteristics of Au/n-InP Schottky barrier diode
A Fritah, L Dehimi, A Saadoune, K Bekhouche
2018 International Conference on Communications and Electrical Engineering …, 2018
2018
ELECTRICAL CHARACTERIZATION OF THE FORWARD CURRENT-VOLTAGE OF AL IMPLANTED 4H-SIC PIN DIODES
ML Megherbi, L Dehimi, A Saadoune, W Terghini, F Pezzimenti, ...
Courrier du Savoir 19, 2015
2015
Numerical simulation of radiation damage on the device performance of GaAs MESFETs
LD Y. B eddiafi, A . Saadoune
Journal of New Technology and Materials 4 (01), 68-72, 2014
2014
Extraction of important parameters of a silicon diode used as particles detector
A Saadoune, L Dehimi, N Sengouga, W Terghini, ML Megherbi
JOURNAL OF NEW TECHNOLOGY AND MATERIALS 2 (2), 29-33, 2012
2012
Calcul numérique de la capacité d'un détecteur de particules à base d'une structure p+ nn+ au silicium
A SAADOUNE
Université Mohamed Khider Biskra, 2004
2004
La résistivité d'une diode au silicium utilisée comme détecteur de particules
S Achour, D Lakhdar
Extraction of important parameters of a silicon diode used as particles detector
L Dehimi, N Sengouga, W Terghini, ML Megherbi
MEASUREMENT AND ANALYSIS OF IVT CHARACTERISTICS OF A AUGENI/P-SI SCHOTTKY BARRIER DIODE
W TERGHINI, A SAADOUNE, L DEHIMI, ML MEGHERBI, S ÖZÇELIKC
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