| Semiconducting Mg 2 Si thin films prepared by molecular-beam epitaxy JE Mahan, A Vantomme, G Langouche, JP Becker Physical Review B 54 (23), 16965, 1996 | 166 | 1996 |
| Position-sensitive Si pad detectors for electron emission channeling experiments U Wahl, JG Correia, A Czermak, SG Jahn, P Jalocha, JG Marques, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2004 | 140* | 2004 |
| Mössbauer spectroscopy Y Yoshida, G Langouche Springer Berlin Heidelberg, doi 10, 978-3, 2013 | 99 | 2013 |
| Direct evidence for tetrahedral interstitial Er in Si U Wahl, A Vantomme, J De Wachter, R Moons, G Langouche, ... Physical review letters 79 (11), 2069, 1997 | 91 | 1997 |
| Thin film growth of semiconducting by codeposition A Vantomme, JE Mahan, G Langouche, JP Becker, M Van Bael, K Temst, ... Applied physics letters 70 (9), 1086-1088, 1997 | 88 | 1997 |
| Co silicide formation on SiGeC/Si and SiGe/Si layers RA Donaton, K Maex, A Vantomme, G Langouche, Y Morciaux, ... Applied physics letters 70 (10), 1266-1268, 1997 | 83 | 1997 |
| Concentration-controlled phase selection of silicide formation during reactive deposition A Vantomme, S Degroote, J Dekoster, G Langouche, R Pretorius Applied physics letters 74 (21), 3137-3139, 1999 | 79 | 1999 |
| Emission channeling studies of Pr in GaN U Wahl, A Vantomme, G Langouche, JP Araújo, L Peralta, JG Correia, ... Journal of Applied Physics 88 (3), 1319-1324, 2000 | 73 | 2000 |
| Growth mechanism and optical properties of semiconducting Mg2Si thin films A Vantomme, G Langouche, JE Mahan, JP Becker Microelectronic engineering 50 (1-4), 237-242, 2000 | 70 | 2000 |
| Low‐temperature anneal of the divacancy in p‐type silicon: A transformation from V2 to VxOy complexes? MA Trauwaert, J Vanhellemont, HE Maes, AM Van Bavel, G Langouche, ... Applied physics letters 66 (22), 3056-3057, 1995 | 66 | 1995 |
| Epilayer-induced structural transition to bcc Co during epitaxial growth of Co/Fe superlattices J Dekoster, E Jedryka, C Meny, G Langouche Europhysics letters 22 (6), 433, 1993 | 54 | 1993 |
| Paramagnetism in Mn/Fe implanted ZnO HP Gunnlaugsson, TE Mølholt, R Mantovan, H Masenda, D Naidoo, ... Applied Physics Letters 97 (14), 2010 | 48 | 2010 |
| Electron emission channeling with position-sensitive detectors U Wahl, JG Correia, S Cardoso, JG Marques, A Vantomme, G Langouche Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1998 | 48 | 1998 |
| Hyperfine interaction of defects in semiconductors G Langouche | 48 | 1992 |
| Elastic strain in layer: A combined x-ray diffraction and Rutherford backscattering/channeling study MF Wu, A Vantomme, SM Hogg, G Langouche, W Van der Stricht, ... Applied physics letters 74 (3), 365-367, 1999 | 46 | 1999 |
| Epitaxial growth of bcc Co/Fe superlattices J Dekoster, E Jedryka, C Meny, G Langouche Journal of magnetism and magnetic materials 121 (1-3), 69-72, 1993 | 44 | 1993 |
| Defects and impurities in silicon materials Y Yoshida, G Langouche Springer Japan. Tokyo 10, 978-4, 2015 | 43 | 2015 |
| New phases and chemical short range order in co-deposited CoFe thin films with bcc structure: an NMR study M Wojcik, JP Jay, P Panissod, E Jedryka, J Dekoster, G Langouche Zeitschrift für Physik B Condensed Matter 103, 5-12, 1997 | 42 | 1997 |
| Direct evidence for implanted Fe on substitutional Ga sites in GaN U Wahl, A Vantomme, G Langouche, JG Correia, L Peralta, ... Applied Physics Letters 78 (21), 3217-3219, 2001 | 40 | 2001 |
| The formation and thermal stability of ion-beam-synthesized ternary MexFe1− xSi2 (Me= Co, Ni) in Si (111) A Vantomme, MF Wu, G Langouche, J Tavares, H Bender Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995 | 38 | 1995 |
