Denis Fichou
Denis Fichou
Professor, NTU Singapore, and Emeritus CNRS Research Director, Sorbonne University, Paris
Verified email at - Homepage
Cited by
Cited by
Handbook of oligo-and polythiophenes
D Fichou
Wiley-VCH, 1999
A field-effect transistor based on conjugated alpha-sexithienyl
G Horowitz, D Fichou, X Peng, Z Xu, F Garnier
Solid State Communications 72 (4), 381-384, 1989
An all‐organic" soft" thin film transistor with very high carrier mobility
F Garnier, G Horowitz, X Peng, D Fichou
Advanced Materials 2 (12), 592-594, 1990
Structural order in conjugated oligothiophenes and its implications on opto-electronic devices
D Fichou
Journal of Materials Chemistry 10 (3), 571-588, 2000
Gate voltage dependent mobility of oligothiophene field-effect transistors
G Horowitz, R Hajlaoui, D Fichou, A El Kassmi
Journal of Applied Physics 85 (6), 3202-3206, 1999
Stoichiometric control of the successive generation of the radical cation and dication of extended α-conjugated oligothiophenes: a quantitative model for doped polythiophene
D Fichou, G Horowitz, B Xu, F Garnier
Synthetic metals 39 (2), 243-259, 1990
Evidence for n‐type conduction in a perylene tetracarboxylic diimide derivative
G Horowitz, F Kouki, P Spearman, D Fichou, C Nogues, X Pan, F Garnier
Advanced Materials 8 (3), 242-245, 1996
The oligothiophene‐based field‐effect transistor: How it works and how to improve it
G Horowitz, X Peng, D Fichou, F Garnier
Journal of Applied Physics 67 (1), 528-532, 1990
All‐organic thin‐film transistors made of alpha‐sexithienyl semiconducting and various polymeric insulating layers
X Peng, G Horowitz, D Fichou, F Garnier
Applied physics letters 57 (19), 2013-2015, 1990
Thin-layer field-effect transistors with MIS structure whose insulator and semiconductor are made of organic materials
F Garnier, G Horowitz, D Fichou
US Patent 5,347,144, 1994
Vibrational studies of a series of. alpha.-oligothiophenes as model systems of polythiophene
G Louarn, JP Buisson, S Lefrant, D Fichou
The Journal of Physical Chemistry 99 (29), 11399-11404, 1995
Role of the semiconductor/insulator interface in the characteristics of π-conjugated-oligomer-based thin-film transistors
G Horowitz, XZ Peng, D Fichou, F Garnier
Synthetic metals 51 (1-3), 419-424, 1992
Influence of the ring-substitution on the second harmonic generation of chalcone derivatives
D Fichou, T Watanabe, T Takeda, S Miyata, Y Goto, M Nakayama
Japanese journal of applied physics 27 (3A), L429, 1988
Coulomb-blockade transport in single-crystal organic thin-film transistors
WA Schoonveld, J Wildeman, D Fichou, PA Bobbert, BJ Van Wees, ...
Nature 404 (6781), 977-980, 2000
First evidence of stimulated emission from a monolithic organic single crystal: α‐Octithiophene
D Fichou, S Delysse, JM Nunzi
Advanced Materials 9 (15), 1178-1181, 1997
Structural basis for high carrier mobility in conjugated oligomers
F Garnier, G Horowitz, XZ Peng, D Fichou
Synthetic metals 45 (2), 163-171, 1991
Growth and structural characterization of the Quasi–2D single crystal of α‐octithiophene
D Fichou, B Bachet, F Demanze, I Billy, G Horowitz, F Garnier
Advanced Materials 8 (6), 500-504, 1996
The lowest energy singlet state of tetrathiophene, an oligomer of polythiophene
D Birnbaum, D Fichou, BE Kohler
The Journal of chemical physics 96 (1), 165-169, 1992
Low temperature optical absorption of polycrystalline thin films of α-quaterthiophene, α-sexithiophene and α-octithiophene, three model oligomers of polythiophene
D Fichou, G Horowitz, B Xu, F Garnier
Synthetic metals 48 (2), 167-179, 1992
Polaron and bipolaron formation on isolated model thiophene oligomers in solution
D Fichou, G Horowitz, F Garnier
Synthetic metals 39 (1), 125-131, 1990
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