High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy P Lefebvre, A Morel, M Gallart, T Taliercio, J Allègre, B Gil, H Mathieu, ...
Applied Physics Letters 78 (9), 1252-1254, 2001
314 2001 Investigation of longitudinal‐optical phonon‐plasmon coupled modes in highly conducting bulk GaN P Perlin, J Camassel, W Knap, T Taliercio, JC Chervin, T Suski, I Grzegory, ...
Applied Physics Letters 67 (17), 2524-2526, 1995
272 1995 Influence of electron-phonon interaction on the optical properties of III nitride semiconductors XB Zhang, T Taliercio, S Kolliakos, P Lefebvre
Journal of Physics: Condensed Matter 13 (32), 7053, 2001
251 2001 Internal electric field in wurtzite C Morhain, T Bretagnon, P Lefebvre, X Tang, P Valvin, T Guillet, B Gil, ...
Physical Review B—Condensed Matter and Materials Physics 72 (24), 241305, 2005
244 2005 Radiative lifetime of a single electron-hole pair in T Bretagnon, P Lefebvre, P Valvin, R Bardoux, T Guillet, T Taliercio, B Gil, ...
Physical Review B—Condensed Matter and Materials Physics 73 (11), 113304, 2006
150 2006 Semiconductor infrared plasmonics T Taliercio, P Biagioni
Nanophotonics 8 (6), 949-990, 2019
140 2019 Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga, In) N/GaN systems A Morel, P Lefebvre, S Kalliakos, T Taliercio, T Bretagnon, B Gil
Physical Review B 68 (4), 045331, 2003
123 2003 Near-field thermophotovoltaic conversion with high electrical power density and cell efficiency above 14% C Lucchesi, D Cakiroglu, JP Perez, T Taliercio, E Tournié, PO Chapuis, ...
Nano Letters 21 (11), 4524-4529, 2021
117 2021 Barrier composition dependence of the internal electric field in ZnO∕ Zn1− xMgxO quantum wells T Bretagnon, P Lefebvre, T Guillet, T Taliercio, B Gil, C Morhain
Applied physics letters 90 (20), 2007
95 2007 Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory R Bardoux, T Guillet, B Gil, P Lefebvre, T Bretagnon, T Taliercio, ...
Physical Review B—Condensed Matter and Materials Physics 77 (23), 235315, 2008
86 2008 Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes S Kalliakos, XB Zhang, T Taliercio, P Lefebvre, B Gil, N Grandjean, ...
Applied physics letters 80 (3), 428-430, 2002
86 2002 Localized surface plasmon resonances in highly doped semiconductors nanostructures V N'Tsame Guilengui, L Cerutti, JB Rodriguez, E Tournié, T Taliercio
Applied Physics Letters 101 (16), 2012
81 2012 Photoluminescence of single R Bardoux, T Guillet, P Lefebvre, T Taliercio, T Bretagnon, S Rousset, ...
Physical Review B—Condensed Matter and Materials Physics 74 (19), 195319, 2006
81 2006 Brewster “mode” in highly doped semiconductor layers: an all-optical technique to monitor doping concentration T Taliercio, VN Guilengui, L Cerutti, E Tournié, JJ Greffet
Optics express 22 (20), 24294-24303, 2014
76 2014 Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite P Lefebvre, S Kalliakos, T Bretagnon, P Valvin, T Taliercio, B Gil, ...
Physical Review B 69 (3), 035307, 2004
74 2004 Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes P Lefebvre, T Taliercio, A Morel, J Allègre, M Gallart, B Gil, H Mathieu, ...
Applied Physics Letters 78 (11), 1538-1540, 2001
71 2001 All-semiconductor plasmonic gratings for biosensing applications in the mid-infrared spectral range FB Barho, F Gonzalez-Posada, MJ Milla-Rodrigo, M Bomers, L Cerutti, ...
Optics express 24 (14), 16175-16190, 2016
69 2016 Prospective investigations of orthorhombic ZnGeN2: synthesis, lattice dynamics and optical properties R Viennois, T Taliercio, V Potin, A Errebbahi, B Gil, S Charar, A Haidoux, ...
Materials Science and Engineering: B 82 (1-3), 45-49, 2001
69 2001 Acoustic investigation of porous silicon layers RJM Da Fonseca, JM Saurel, A Foucaran, J Camassel, E Massone, ...
Journal of materials science 30, 35-39, 1995
66 1995 Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes S Kalliakos, T Bretagnon, P Lefebvre, T Taliercio, B Gil, N Grandjean, ...
Journal of applied physics 96 (1), 180-185, 2004
63 2004 