O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors B Ryu, HK Noh, E Choi, KJ Chang
Applied physics letters 97 (2), 2010
463 2010 Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors HK Noh, KJ Chang, B Ryu, WJ Lee
Physical Review B 84 (11), 115205, 2011
295 2011 Effect of hydrogen incorporation on the negative bias illumination stress instability in amorphous In-Ga-Zn-O thin-film-transistors HK Noh, JS Park, KJ Chang
Journal of Applied Physics 113 (6), 2013
70 2013 In0.53 Ga0.47 As-Based nMOSFET Design for Low Standby Power Applications KK Bhuwalka, Z Wu, HK Noh, W Lee, M Cantoro, YC Heo, S Jin, W Choi, ...
IEEE Transactions on Electron Devices 62 (9), 2816-2823, 2015
30 2015 The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In–Ga–Zn–O thin film transistors YJ Oh, HK Noh, KJ Chang
Science and technology of advanced materials 16 (3), 034902, 2015
20 2015 Method for forming pattern of semiconductor device and semiconductor device formed using the same S Song, HK Noh, K TaeYong, S Kim, S Maeda, K Bhuwalka, K Uihui, ...
US Patent App. 14/711,394, 2016
17 2016 Hybrid functional versus quasiparticle calculations for the Schottky barrier and effective work function at TiN/HfO YJ Oh, AT Lee, HK Noh, KJ Chang
Physical Review B 87 (7), 075325, 2013
16 2013 Ab initio study of boron segregation and deactivation at Si/SiO2 interface YJ Oh, JH Hwang, HK Noh, J Bang, B Ryu, KJ Chang
Microelectronic engineering 89, 120-123, 2012
16 2012 First-principles study of the segregation of boron dopants near the interface between crystalline Si and amorphous SiO2 YJ Oh, HK Noh, KJ Chang
Physica B: Condensed Matter 407 (15), 2989-2992, 2012
9 2012 Local bonding effect on the defect states of oxygen vacancy in amorphous HfSiO4 HK Noh, B Ryu, E Choi, J Bang, KJ Chang
Applied Physics Letters 95 (8), 2009
6 2009 Automatic modeling of logic device performance based on machine learning and explainable AI S Kim, K Lee, HK Noh, Y Shin, KB Chang, J Jeong, S Baek, M Kang, ...
2020 International Conference on Simulation of Semiconductor Processes and …, 2020
5 2020 Impact of BTBT, stress and interface charge on optimum Ge in SiGe pMOS for low power applications S Dhar, HK Noh, SJ Kim, HW Kim, Z Wu, WS Lee, KK Bhuwalka, JC Kim, ...
2016 International Conference on Simulation of Semiconductor Processes and …, 2016
4 2016 A simulation physics-guided neural network for predicting semiconductor structure with few experimental data QH Kim, S Lee, A Ma, J Kim, HK Noh, KB Chang, W Cheon, S Yi, J Jeong, ...
Solid-State Electronics 201, 108568, 2023
3 2023 Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO2 and Ni/HfO2 interfaces HK Noh, YJ Oh, KJ Chang
Physica B: Condensed Matter 407 (15), 2907-2910, 2012
3 2012 One-loop scalar integrals contributing to resummation of relativistic corrections to Γ [J/ψ→ e+ e-] J Lee, HK Noh, C Yu
Journal of the Korean Physical Society 50 (2), 403-408, 2007
3 2007 Memory device KS Chae, T Rim, H Noh, W Lee
US Patent App. 16/563,853, 2020
2 2020 One-loop master integral for order-v2n relativistic corrections to Γ [J/ψ→ e+ e-] J Lee, HK Noh, C Yu
Journal of the Korean Physical Society 50 (2), 398-402, 2007
1 2007 Simulation system for semiconductor process and simulation method thereof S Myung, J Hyunjae, HUH In, HK Noh, MC Park, C Jeong
US Patent 11,886,783, 2024
2024 Method and system for measuring structure based on spectrum KIM QHwan, J Kim, H Noh, MA Ami, S Lee, K Chang, W Cheon, J Jeong
US Patent App. 18/348,469, 2024
2024 P-599 The use of serum test to detect the LH surge in ultrasound-monitored intrauterine insemination (IUI) significantly increases pregnancy rates. MJ Kim, SG Kim, HY Kim, JS Park, HJ Son, GW Kim, GD Heo, JY Seong, ...
Human Reproduction 38 (Supplement_1), dead093. 928, 2023
2023 
Kee Joo ChangKorea Advanced Institute of Science and TechnologyAdresse e-mail validée de kaist.ac.kr
