Adresse e-mail validée de im2np.fr
Citée par
Citée par
SiGe nanostructures: new insights into growth processes
I Berbezier, A Ronda, A Portavoce
Journal of Physics: Condensed Matter 14 (35), 8283, 2002
Sb-surfactant-mediated growth of Si and Ge nanostructures
A Portavoce, I Berbezier, A Ronda
Physical Review B 69 (15), 155416, 2004
Mechanism of the nanoscale localization of Ge quantum dot nucleation on focused ion beam templated Si (001) surfaces
A Portavoce, M Kammler, R Hull, MC Reuter, FM Ross
Nanotechnology 17 (17), 4451, 2006
Ge dots self-assembling: Surfactant mediated growth of Ge on SiGe (118) stress-induced kinetic instabilities
I Berbezier, A Ronda, A Portavoce, N Motta
Applied Physics Letters 83 (23), 4833-4835, 2003
Three-dimensional composition mapping of NiSi phase distribution and Pt diffusion via grain boundaries in Ni2Si
D Mangelinck, K Hoummada, A Portavoce, C Perrin, R Daineche, ...
Scripta Materialia 62 (8), 568-571, 2010
Nanometer-scale control of single quantum dot nucleation through focused ion-beam implantation
A Portavoce, R Hull, MC Reuter, FM Ross
Physical Review B 76 (23), 235301, 2007
Morphological evolution of SiGe layers
I Berbezier, A Ronda, F Volpi, A Portavoce
Surface science 531 (3), 231-243, 2003
Composition measurement of the Ni-silicide transient phase by atom probe tomography
K Hoummada, I Blum, D Mangelinck, A Portavoce
Applied Physics Letters 96 (26), 261904, 2010
Sb-surfactant mediated growth of Ge nanostructures
A Portavoce, A Ronda, I Berbezier
Materials Science and Engineering: B 89 (1-3), 205-210, 2002
Tungsten diffusion in silicon
A De Luca, A Portavoce, M Texier, C Grosjean, N Burle, V Oison, ...
Journal of Applied Physics 115 (1), 013501, 2014
Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si (001)
A Portavoce, M Kammler, R Hull, MC Reuter, M Copel, FM Ross
Physical Review B 70 (19), 195306, 2004
Sb surface segregation during epitaxial growth of SiGe heterostructures: The effects of Ge composition and biaxial stress
A Portavoce, I Berbezier, P Gas, A Ronda
Physical Review B 69 (15), 155414, 2004
Sb segregation in Si and SiGe: effect on the growth of self-organised Ge dots
A Portavoce, F Volpi, A Ronda, P Gas, I Berbezier
Thin Solid Films 380 (1-2), 164-168, 2000
Transition from anomalous kinetics toward Fickian diffusion for Si dissolution into amorphous Ge
Z Balogh, Z Erdélyi, DL Beke, GA Langer, A Csik, HG Boyen, U Wiedwald, ...
Applied Physics Letters 92 (14), 143104, 2008
Atom probe tomography for advanced metallization
D Mangelinck, F Panciera, K Hoummada, M El Kousseifi, C Perrin, ...
Microelectronic engineering 120, 19-33, 2014
Sb lattice diffusion in heterostructures: Chemical and stress effects
A Portavoce, P Gas, I Berbezier, A Ronda, JS Christensen, AY Kuznetsov, ...
Physical Review B 69 (15), 155415, 2004
Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing
R Milazzo, G Impellizzeri, D Piccinotti, D De Salvador, A Portavoce, ...
Applied Physics Letters 110 (1), 011905, 2017
Nanometric size effect on Ge diffusion in polycrystalline Si
A Portavoce, G Chai, L Chow, J Bernardini
Journal of Applied Physics 104 (10), 104910, 2008
Progress in the understanding of Ni silicide formation for advanced MOS structures
D Mangelinck, K Hoummada, F Panciera, M El Kousseifi, I Blum, ...
physica status solidi (a) 211 (1), 152-165, 2014
Triple-junction contribution to diffusion in nanocrystalline Si
A Portavoce, L Chow, J Bernardini
Applied Physics Letters 96 (21), 214102, 2010
Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.
Articles 1–20