Mitigation of write errors in multi-level cell flash memory through adaptive error correction code decoding AS Alhussien, I Djurdjevic, Y Cai, EF Haratsch, Y Li, ET Cohen US Patent 9,319,073, 2016 | 35 | 2016 |
A study of polar codes for MLC NAND flash memories Y Li, H Alhussien, EF Haratsch, AA Jiang 2015 International Conference on Computing, Networking and Communications …, 2015 | 35 | 2015 |
The devil is in the details: Implementing flash page reuse with wom codes F Margaglia, G Yadgar, E Yaakobi, Y Li, A Schuster, A Brinkmann 14th USENIX Conference on File and Storage Technologies (FAST 16), 95-109, 2016 | 34 | 2016 |
Asymmetric error correction and flash-memory rewriting using polar codes EE Gad, Y Li, J Kliewer, M Langberg, A Jiang, J Bruck US Patent App. 15/112,156, 2015 | 33* | 2015 |
Reduced polar codes AS Alhussien, EF Haratsch, Y Li US Patent 9,007,241, 2015 | 31 | 2015 |
Asymmetric error correction and flash-memory rewriting using polar codes EE Gad, Y Li, J Kliewer, M Langberg, AA Jiang, J Bruck IEEE Transactions on Information Theory 62 (7), 4024-4038, 2016 | 29 | 2016 |
Joint rewriting and error correction in write-once memories A Jiang, Y Li, EE Gad, M Langberg, J Bruck ISIT 2013, 2013 | 26 | 2013 |
Reduced polar codes AS Alhussien, EF Haratsch, Y Li US Patent 9,209,832, 2015 | 24 | 2015 |
Content-assisted File Decoding for Nonvolatile Memories Y Li, Y Wang, AA Jiang, J Bruck Asilomar Conference, 2012 | 21 | 2012 |
Rewriting flash memories by message passing EE Gad, W Huang, Y Li, J Bruck 2015 IEEE International Symposium on Information Theory (ISIT), 646-650, 2015 | 20* | 2015 |
Joint rewriting and error correction in write-once memories A Jiang, Y Li, EE Gad, M Langberg, J Bruck US Patent 9,946,475, 2018 | 17 | 2018 |
Soft decoding of polar codes AS Alhussien, EF Haratsch, Y Li US Patent 9,317,365, 2016 | 15 | 2016 |
Polar coding for noisy write-once memories EE Gad, Y Li, J Kliewer, M Langberg, A Jiang, J Bruck 2014 IEEE International Symposium on Information Theory, 1638-1642, 2014 | 13 | 2014 |
Error correction through language processing A Jiang, Y Li, J Bruck 2015 IEEE Information Theory Workshop (ITW), 1-5, 2015 | 12 | 2015 |
Enhanced error correction via language processing A Jiang, Y Li, J Bruck Proc. Non-Volatile Memories Workshop (NMVW), 2015 | 9 | 2015 |
Implementing Rank Modulation Y Li, Y Ma, E En Gad, M Kim, AA Jiang, J Bruck Nonvolatile Memory Workshop, 2015 | 9 | 2015 |
Error characterization and mitigation for 16nm MLC NAND flash memory under total ionizing dose effect Y Li, J Bruck US Patent 9,870,834, 2018 | 8 | 2018 |
NAND flash reliability with rank modulation Y Li, EE Gad, A Jiang, J Bruck US Patent 9,983,808, 2018 | 7 | 2018 |
Error Correction and Partial Information Rewriting for Flash Memories Y Li, AA Jiang, J Bruck ISIT, 2014 | 6 | 2014 |
Bit-fixing Codes for Multi-level Cells AA Jiang, Y Li, J Bruck Information Theory Workshop, 2012 | 6 | 2012 |