Charles Cornet

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Olivier DURANDINSA de RennesAdresse e-mail validée de insa-rennes.fr
Jacky EvenProfessor INSA Rennes, IUF Physique, FOTON Institute, CNRS, FranceAdresse e-mail validée de insa-rennes.fr
Alain Le CorreAdresse e-mail validée de insa-rennes.fr
Laurent PedesseauAssociate Professor INSA-Rennes FOTON Institute. CNRS FranceAdresse e-mail validée de insa-rennes.fr
Cedric RobertCNRS-LPCNO INSA ToulouseAdresse e-mail validée de insa-toulouse.fr
Hervé FOLLIOTprofessor, dean of research, INSA de Rennes, Institut FOTON, CNRSAdresse e-mail validée de insa-rennes.fr
Jean-Marc JancuProfesseur des universités INSA RennesAdresse e-mail validée de insa-rennes.fr
JF GuillemolesCNRS, Institut Photovoltaique d'Ile de FranceAdresse e-mail validée de enscp.fr
Xavier MARIEProfessor of Physics, Institut National des Sciences Appliquées, LPCNO ToulouseAdresse e-mail validée de insa-toulouse.fr
Soline Boyer-RichardFOTON, INSA de Rennes, FranceAdresse e-mail validée de insa-rennes.fr
alain rollandProfesseur IUT de Lannion, Université de Rennes1, laboratoire FOTONAdresse e-mail validée de univ-rennes1.fr
Jithesh KuyyalilResearch Scientist, Boston UniversityAdresse e-mail validée de bu.edu
Andrei SchliwaPrincipal Scientist @ Technische Universität BerlinAdresse e-mail validée de tu-berlin.de
Yannick DumeigeUniversité de Rennes - Institut FOTON CNRS UMR 6082Adresse e-mail validée de univ-rennes.fr
Dieter BimbergCIOMP of CAS, Changchun and TU BerlinAdresse e-mail validée de physik.tu-berlin.de
Paul KoenraadEindhoven University of TechnologyAdresse e-mail validée de tue.nl
Nestoklon MikhailTU DortmundAdresse e-mail validée de tu-dortmund.de
Philippe CaroffExecutive director @EPFL’s Center for Quantum Science and Engineering (QSE)Adresse e-mail validée de epfl.ch
MANDORLO FabienMaitre de conférences HDR (INSA de Lyon), ingénieur de l'Ecole Centrale de LyonAdresse e-mail validée de ec-lyon.fr
Mustapha LemitiProfesseur INSA de LyonAdresse e-mail validée de insa-lyon.fr

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Charles Cornet

Pr. @ INSA Rennes - Institut FOTON (CNRS, France)

Adresse e-mail validée de insa-rennes.fr - Page d'accueil

semiconductors MBE epitaxy III-V silicon


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Electronic and optical properties of quantum dots on InP(100) and substrates: Theory and experiment C Cornet, A Schliwa, J Even, F Doré, C Celebi, A Létoublon, E Macé, ... Physical Review B—Condensed Matter and Materials Physics 74 (3), 035312, 2006	106	2006
Analysis of the Double Laser Emission Occurring in 1.55-InAs–InP (113)B Quantum-Dot Lasers K Veselinov, F Grillot, C Cornet, J Even, A Bekiarski, M Gioannini, ... IEEE Journal of Quantum Electronics 43 (9), 810-816, 2007	85	2007
Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells S Almosni, C Robert, T Nguyen Thanh, C Cornet, A Létoublon, T Quinci, ... Journal of applied physics 113 (12), 2013	78	2013
Universal description of III-V/Si epitaxial growth processes I Lucci, S Charbonnier, L Pedesseau, M Vallet, L Cerutti, JB Rodriguez, ... Physical review materials 2 (6), 060401, 2018	74	2018
Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD–MBE growth cluster T Quinci, J Kuyyalil, TN Thanh, YP Wang, S Almosni, A Létoublon, ... Journal of Crystal Growth 380, 157-162, 2013	52	2013
Integrated lasers on silicon C Cornet, Y Léger, C Robert Elsevier, 2016	51	2016
Electronic, optical, and structural properties of (In, Ga) As/GaP quantum dots C Robert, C Cornet, P Turban, T Nguyen Thanh, MO Nestoklon, J Even, ... Physical Review B—Condensed Matter and Materials Physics 86 (20), 205316, 2012	50	2012
Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon T Nguyen Thanh, C Robert, W Guo, A Létoublon, C Cornet, G Elias, ... Journal of applied physics 112 (5), 2012	47	2012
Room temperature operation of GaAsP (N)/GaP (N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen C Robert, A Bondi, TN Thanh, J Even, C Cornet, O Durand, JP Burin, ... Applied Physics Letters 98 (25), 2011	47	2011
X-ray study of antiphase domains and their stability in MBE grown GaP on Si A Létoublon, W Guo, C Cornet, A Boulle, M Véron, A Bondi, O Durand, ... Journal of Crystal Growth 323 (1), 409-412, 2011	45	2011
Approach to wetting-layer-assisted lateral coupling of quantum dots C Cornet, C Platz, P Caroff, J Even, C Labbé, H Folliot, A Le Corre, ... Physical Review B—Condensed Matter and Materials Physics 72 (3), 035342, 2005	44	2005
Zinc-blende group III-V/group IV epitaxy: Importance of the miscut C Cornet, S Charbonnier, I Lucci, L Chen, A Létoublon, A Alvarez, ... Physical Review Materials 4 (5), 053401, 2020	42	2020
Correlations between electrical and optical properties in lattice-matched GaAsPN/GaP solar cells S Almosni, P Rale, C Cornet, M Perrin, L Lombez, A Létoublon, ... Solar Energy Materials and Solar Cells 147, 53-60, 2016	39	2016
Design of a lattice-matched III–V–N/Si photovoltaic tandem cell monolithically integrated on silicon substrate A Rolland, L Pedesseau, J Even, S Almosni, C Robert, C Cornet, ... Optical and Quantum Electronics 46, 1397-1403, 2014	39	2014
Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering W Guo, A Bondi, C Cornet, A Létoublon, O Durand, T Rohel, ... Applied Surface Science 258 (7), 2808-2815, 2012	39	2012
Computational analysis of hybrid perovskite on silicon 2-T tandem solar cells based on a Si tunnel junction A Rolland, L Pedesseau, M Kepenekian, C Katan, Y Huang, S Wang, ... Optical and Quantum Electronics 50, 1-13, 2018	37	2018
Atomistic calculations of Ga (NAsP)/GaP (N) quantum wells on silicon substrate: band structure and optical gain C Robert, M Perrin, C Cornet, J Even, JM Jancu Applied Physics Letters 100 (11), 2012	37	2012
Room temperature photoluminescence of high density (In, Ga) As/GaP quantum dots T Nguyen Thanh, C Robert, C Cornet, M Perrin, JM Jancu, N Bertru, ... Applied Physics Letters 99 (14), 2011	37	2011
Quantitative investigations of optical absorption in InAs∕ InP (311) B quantum dots emitting at 1.55 μm wavelength C Cornet, C Labbé, H Folliot, N Bertru, O Dehaese, J Even, A Le Corre, ... Applied physics letters 85 (23), 5685-5687, 2004	37	2004
Density Functional Theory Simulations of Semiconductors for Photovoltaic Applications: Hybrid Organic‐Inorganic Perovskites and III/V Heterostructures J Even, L Pedesseau, E Tea, S Almosni, A Rolland, C Robert, JM Jancu, ... International Journal of Photoenergy 2014 (1), 649408, 2014	36	2014

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