| Two-step phase transition in SnSe and the origins of its high power factor from first principles A Dewandre, O Hellman, S Bhattacharya, AH Romero, GKH Madsen, ... Physical review letters 117 (27), 276601, 2016 | 107 | 2016 |
| High-throughput exploration of alloying as design strategy for thermoelectrics S Bhattacharya, GKH Madsen Physical Review B 92 (8), 085205, 2015 | 86 | 2015 |
| A novel p-type half-Heusler from high-throughput transport and defect calculations S Bhattacharya, GKH Madsen Journal of Materials Chemistry C 4, 11261-11268, 2016 | 75 | 2016 |
| Novel ternary sulfide thermoelectric materials from high throughput transport and defect calculations S Bhattacharya, R Chmielowski, G Dennler, GKH Madsen Journal of materials chemistry A 4 (28), 11086-11093, 2016 | 38 | 2016 |
| High thermoelectric performance of tellurium doped paracostibite R Chmielowski, S Bhattacharya, W Xie, D Péré, S Jacob, R Stern, ... Journal of Materials Chemistry C 4 (15), 3094-3100, 2016 | 36 | 2016 |
| Unraveling self‐doping effects in thermoelectric TiNiSn half‐Heusler compounds by combined theory and high‐throughput experiments M Wambach, R Stern, S Bhattacharya, P Ziolkowski, E Müller, ... Advanced Electronic Materials 2 (2), 1500208, 2016 | 35 | 2016 |
| Spin transport properties of triarylamine-based nanowires S Bhattacharya, A Akande, S Sanvito Chemical Communications 50 (50), 6626-6629, 2014 | 34 | 2014 |
| Achieving optimum carrier concentrations in p-doped SnS thermoelectrics S Bhattacharya, GNS Gunda, R Stern, S Jacobs, R Chmielowski, ... Phys. Chem. Chem. Phys. 17, 9161-9166, 2015 | 29 | 2015 |
| Strong Reduction of Thermal Conductivity and Enhanced Thermoelectric Properties in CoSbS1-xSex Paracostibite R Chmielowski, S Bhattacharya, S Jacob, D Péré, A Jacob, K Moriya, ... Scientific Reports 7 (1), 46630, 2017 | 28 | 2017 |
| First principles study of the structural, electronic, and transport properties of triarylamine-based nanowires A Akande, S Bhattacharya, T Cathcart, S Sanvito Journal of Chemical Physics 140 (074301), 2014 | 13 | 2014 |
| The search for a spin crossover transition in small sized π-conjugated molecules: a Monte Carlo study S Bhattacharya, MS Ferreira, S Sanvito Journal of Physics: Condensed Matter 23 (31), 316001, 2011 | 6 | 2011 |
| Nitrogen Ion Induced 2D-GaN Layer Formation of GaAs (001) Surface P Kumar, S Bhattacharya, BR Mehta, SM Shivaprasad Journal of Nanoscience and Nanotechnology 9 (9), 5659-5663, 2009 | 6 | 2009 |
| A Novel Design of Reversible Gate using Quantum-Dot Cellular Automata (QCA) A Roy, AD Singh, A Saha, S Saha, V Gupta, Z Qingyi, S Bhattacharya, ... 2020 IEEE 1st International Conference for Convergence in Engineering (ICCE …, 2020 | 2 | 2020 |
| Mathematical modelling of kink effect in deep-submicron FDSOIMOSFET S Bhattacharya, P Ray, J Sanyal 2018 Emerging Trends in Electronic Devices and Computational Techniques …, 2018 | 2 | 2018 |
| Unraveling Self-Doping Effects in Thermoelectric TiNiSn Half-Heusler Compounds by Combined Theory and High-Throughput Experiments (vol 2, 1500208, 2016) M Wambach, R Stern, S Bhattacharya, P Ziolkowski, E Mueller, ... ADVANCED ELECTRONIC MATERIALS 2 (3), 2016 | 1 | 2016 |
| Voltage-assisted selective growth of ZnO nanowires on metal/semiconductor surfaces employing hydrothermal double-step CBD/CBD growth technique S Bhattacharya, R Saha, S Mandal, D Bhattacharya, S Chattopadhyay Journal of Materials Science: Materials in Electronics 34 (36), 2319, 2023 | | 2023 |
| Modeling of temperature dependent electrical characteristic of quantum dot Single Electron Transistor (SET) A Kumar, SK Pandey, K Ghosh, J Sanyal, S Bhattacharya 2022 IEEE International Conference of Electron Devices Society Kolkata …, 2022 | | 2022 |
| Selective growth of ZnO nanowires by employing voltage-assisted hydrothermal growth technique S Bhattacharya, S Mandal, D Bhattacharya, R Saha, S Chattopadhyay 2022 IEEE International Conference of Electron Devices Society Kolkata …, 2022 | | 2022 |
| Mathematical Modelling of Drain Current Enhancement in High-k FD MOSFET A Pandey, A Saha, K Ghosh, S Bhattacharya, J Sanyal 2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS), 95-98, 2020 | | 2020 |
| Investigation of density and alignment of ZnO-nanowires grown by double-step chemical bath deposition (CBD/CBD) technique on metallic, insulating and semiconducting substrates S Bhattacharya, R Saha, S Sikdar, S Mandal, C Das, S Chattopadhyay 2020 International Symposium on Devices, Circuits and Systems (ISDCS), 1-4, 2020 | | 2020 |
Georg K. H. MadsenTU WienAdresse e-mail validée de tuwien.ac.at
