Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2 L Yang, K Majumdar, H Liu, Y Du, H Wu, M Hatzistergos, PY Hung, ... Nano letters 14 (11), 6275-6280, 2014 | 762 | 2014 |
High-Performance Depletion/Enhancement-ode -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm H Zhou, M Si, S Alghamdi, G Qiu, L Yang, DY Peide IEEE Electron Device Letters 38 (1), 103-106, 2016 | 302 | 2016 |
Controlled growth of a large-size 2D selenium nanosheet and its electronic and optoelectronic applications J Qin, G Qiu, J Jian, H Zhou, L Yang, A Charnas, DY Zemlyanov, CY Xu, ... ACS nano 11 (10), 10222-10229, 2017 | 205 | 2017 |
Field-Effect Transistors With Graphene/Metal Heterocontacts Y Du, L Yang, J Zhang, H Liu, K Majumdar, PD Kirsch, DY Peide IEEE electron device letters 35 (5), 599-601, 2014 | 172 | 2014 |
Surface chemistry of black phosphorus under a controlled oxidative environment W Luo, DY Zemlyanov, CA Milligan, Y Du, L Yang, Y Wu, DY Peide Nanotechnology 27 (43), 434002, 2016 | 157 | 2016 |
Performance Potential and Limit of MoS2 Transistors X Li, L Yang, M Si, S Li, M Huang, P Ye, Y Wu Advanced Materials 27 (9), 1547-1552, 2015 | 110 | 2015 |
High-performance MoS2 field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·µm) and record high drain current (460 µA/µm) L Yang, K Majumdar, Y Du, H Liu, H Wu, M Hatzistergos, PY Hung, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 87 | 2014 |
Performance enhancement of black phosphorus field-effect transistors by chemical doping Y Du, L Yang, H Zhou, DY Peide IEEE Electron Device Letters 37 (4), 429-432, 2016 | 70 | 2016 |
Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors Y Du, L Yang, H Liu, PD Ye APL Materials 2 (9), 2014 | 63 | 2014 |
Sub-60 mV/dec ferroelectric HZO MoS2 negative capacitance field-effect transistor with internal metal gate: The role of parasitic capacitance M Si, C Jiang, CJ Su, YT Tang, L Yang, W Chung, MA Alam, PD Ye 2017 IEEE International Electron Devices Meeting (IEDM), 23.5. 1-23.5. 4, 2017 | 62 | 2017 |
A novel CuxSiyO resistive memory in logic technology with excellent data retention and resistance distribution for embedded applications M Wang, WJ Luo, YL Wang, LM Yang, W Zhu, P Zhou, JH Yang, XG Gong, ... 2010 Symposium on VLSI Technology, 89-90, 2010 | 55 | 2010 |
β-Ga2O3 Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications M Si, L Yang, H Zhou, PD Ye ACS omega 2 (10), 7136-7140, 2017 | 48 | 2017 |
Reliable passivation of black phosphorus by thin hybrid coating S Gamage, A Fali, N Aghamiri, L Yang, PD Ye, Y Abate Nanotechnology 28 (26), 265201, 2017 | 48 | 2017 |
Nanomanufacturing of 2D Transition Metal Dichalcogenide Materials Using Self-Assembled DNA Nanotubes. J Choi, H Chen, F Li, L Yang, SS Kim, RR Naik, PD Ye, JH Choi chemical vapor deposition 13, 15, 2015 | 41 | 2015 |
10 nm nominal channel length MoS2 FETs with EOT 2.5 nm and 0.52 mA/µm drain current L Yang, RTP Lee, SSP Rao, W Tsai, PD Ye 2015 73rd Annual Device Research Conference (DRC), 237-238, 2015 | 36 | 2015 |
Low Reset Current in Stacked Resistive Switching Memory YL Song, Y Liu, YL Wang, M Wang, XP Tian, LM Yang, YY Lin IEEE electron device letters 32 (10), 1439-1441, 2011 | 35 | 2011 |
Linear Scaling of Reset Current Down to 22-nm Node for a Novel RRAM LM Yang, YL Song, Y Liu, YL Wang, XP Tian, M Wang, YY Lin, R Huang, ... IEEE electron device letters 33 (1), 89-91, 2011 | 34 | 2011 |
Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors X Li, Y Du, M Si, L Yang, S Li, T Li, X Xiong, P Ye, Y Wu Nanoscale 8 (6), 3572-3578, 2016 | 31 | 2016 |
Few-layer black phosporous PMOSFETs with BN/AI2O3 bilayer gate dielectric: Achieving Ion=850μA/μm, gm=340μS/μm, and Rc=0.58kΩ·μm LM Yang, G Qiu, MW Si, AR Charnas, CA Milligan, DY Zemlyanov, ... 2016 IEEE International Electron Devices Meeting (IEDM), 5.5. 1-5.5. 4, 2016 | 29 | 2016 |
How important is the metal–semiconductor contact for Schottky barrier transistors: a case study on few-layer black phosphorus? L Yang, A Charnas, G Qiu, YM Lin, CC Lu, W Tsai, Q Paduano, M Snure, ... ACS omega 2 (8), 4173-4179, 2017 | 23 | 2017 |