| 1.5-kV and 2.2-m -cm Vertical GaN Transistors on Bulk-GaN Substrates H Nie, Q Diduck, B Alvarez, AP Edwards, BM Kayes, M Zhang, G Ye, ... IEEE Electron Device Letters 35 (9), 939-941, 2014 | 362 | 2014 |
| Frequency performance enhancement of AlGaN/GaN HEMTs on diamond Q Diduck, J Felbinger, LF Eastman, D Francis, J Wasserbauer, F Faili, ... Electron. Lett 45 (14), 758-759, 2009 | 44 | 2009 |
| Nonlinear characteristics of T-branch junctions: Transition from ballistic to diffusive regime H Irie, Q Diduck, M Margala, R Sobolewski, MJ Feldman Applied Physics Letters 93 (5), 2008 | 43 | 2008 |
| A room temperature ballistic deflection transistor for high performance applications Q Diduck, H Irie, M Margala International Journal of High Speed Electronics and Systems 19 (01), 23-31, 2009 | 34 | 2009 |
| A terahertz transistor based on geometrical deflection of ballistic current Q Diduck, M Margala, MJ Feldman 2006 IEEE MTT-S International Microwave Symposium Digest, 345-347, 2006 | 30 | 2006 |
| NAND gate design for ballistic deflection transistors D Wolpert, Q Diduck, P Ampadu IEEE Transactions on Nanotechnology 10 (1), 150-154, 2009 | 27 | 2009 |
| Ballistic deflection transistor and logic circuits based on same Q Diduck, M Margala US Patent 7,576,353, 2009 | 27 | 2009 |
| GaN-on-diamond field-effect transistors: from wafers to amplifier modules DI Babić, Q Diduck, P Yenigalla, A Schreiber, D Francis, F Faili, ... The 33rd International Convention MIPRO, 60-66, 2010 | 26 | 2010 |
| 3,000+ Hours continuous operation of GaN-on-Diamond HEMTs at 350° c channel temperature F Ejeckam, D Babić, F Faili, D Francis, F Lowe, Q Diduck, C Khandavalli, ... 2014 Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM …, 2014 | 20 | 2014 |
| Gallium—nitride-on-diamond wafers and devices, and methods of manufacture D Babić, F Faili, D Francis, Q Diduck, F Ejeckam US Patent 8,674,405, 2014 | 16 | 2014 |
| 1.5-kV and 2.2-mOhm-cm2 Vertical GaN Transistors on Bulk-GaN Substrates Q Diduck, B Alvarez IEEE Electron Device Letters 35 (9), 939-941, 2014 | 16 | 2014 |
| Method and system for a gallium nitride vertical transistor H Nie, AP Edwards, I Kizilyalli, DP Bour, TR Prunty, Q Diduck US Patent 9,059,199, 2015 | 15 | 2015 |
| Ballistic deflection transistors and the emerging nanoscale era D Wolpert, H Irie, R Sobolewski, P Ampadu, Q Diduck, M Margala 2009 IEEE International Symposium on Circuits and Systems (ISCAS), 61-64, 2009 | 13 | 2009 |
| A fully polar transmitter for efficient software-defined radios E McCune, Q Diduck, W Godycki, R Booth, D Kirkpatrick 2017 IEEE MTT-S International Microwave Symposium (IMS), 1946-1949, 2017 | 11 | 2017 |
| Gallium-nitride-on-diamond wafers and devices, and methods of manufacture F Ejeckam, D Francis, Q Diduck, F Nasser-Faili, D Babić US Patent 8,759,134, 2014 | 11 | 2014 |
| Gallium-nitride-on-diamond wafers and manufacturing equipment and methods of manufacture D Francis, F Faili, K Matthews, FY Lowe, Q Diduck, S Zaytsev, F Ejeckam US Patent 9,359,693, 2016 | 9 | 2016 |
| RF and milimeter-wave high-power semiconductor device DI Babic, QE Diduck, A Schreiber US Patent 8,796,843, 2014 | 9 | 2014 |
| Semiconductor devices with improved reliability and operating life and methods of manufactuirng the same D Francis, D Babic, F Nasser-Faili, F Ejeckham, Q Diduck, J Smart, ... US Patent App. 14/432,721, 2015 | 8 | 2015 |
| Thermal electric energy converter Q Diduck US Patent App. 10/459,715, 2004 | 8 | 2004 |
| 4096-QAM Microwave Transmitter Providing Efficiency Exceeding 50% and EVM Below 1% E McCune, Q Diduck 2019 49th European Microwave Conference (EuMC), 896-899, 2019 | 7 | 2019 |
