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Antoine Letoublon
Antoine Letoublon
INSA Rennes - FOTON Lab. (France
Adresse e-mail validée de insa-rennes.fr - Page d'accueil
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Elastic softness of hybrid lead halide perovskites
AC Ferreira, A Létoublon, S Paofai, S Raymond, C Ecolivet, B Rufflé, ...
Physical review letters 121 (8), 085502, 2018
1432018
Elastic Constants, Optical Phonons, and Molecular Relaxations in the High Temperature Plastic Phase of the CH3NH3PbBr3 Hybrid Perovskite
A Létoublon, S Paofai, B Ruffle, P Bourges, B Hehlen, T Michel, C Ecolivet, ...
The journal of physical chemistry letters 7 (19), 3776-3784, 2016
1152016
Electronic and optical properties of quantum dots on InP(100) and substrates: Theory and experiment
C Cornet, A Schliwa, J Even, F Doré, C Celebi, A Létoublon, E Macé, ...
Physical Review B 74 (3), 035312, 2006
1022006
Dynamics of Phason Fluctuations in the i− A l P d M n Quasicrystal
S Francoual, F Livet, M De Boissieu, F Yakhou, F Bley, A Létoublon, ...
Physical review letters 91 (22), 225501, 2003
842003
Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells
S Almosni, C Robert, T Nguyen Thanh, C Cornet, A Létoublon, T Quinci, ...
Journal of applied physics 113 (12), 2013
772013
Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells
S Almosni, C Robert, T Nguyen Thanh, C Cornet, A Létoublon, T Quinci, ...
Journal of applied physics 113 (12), 2013
772013
Phason softening in the AlPdMn icosahedral phase
M Boudard, M De Boissieu, A Letoublon, B Hennion, R Bellissent, C Janot
Europhysics Letters 33 (3), 199, 1996
721996
Universal description of III-V/Si epitaxial growth processes
I Lucci, S Charbonnier, L Pedesseau, M Vallet, L Cerutti, JB Rodriguez, ...
Physical review materials 2 (6), 060401, 2018
692018
Strain, size, and composition of InAs quantum sticks embedded in InP determined via grazing incidence X-ray anomalous diffraction
A Létoublon, V Favre-Nicolin, H Renevier, MG Proietti, C Monat, ...
Physical review letters 92 (18), 186101, 2004
652004
Strain, size, and composition of InAs quantum sticks embedded in InP determined via grazing incidence X-ray anomalous diffraction
A Létoublon, V Favre-Nicolin, H Renevier, MG Proietti, C Monat, ...
Physical review letters 92 (18), 186101, 2004
652004
Strain, size, and composition of InAs quantum sticks embedded in InP determined via grazing incidence X-ray anomalous diffraction
A Létoublon, V Favre-Nicolin, H Renevier, MG Proietti, C Monat, ...
Physical review letters 92 (18), 186101, 2004
652004
Phason elastic constants of the icosahedral Al-Pd-Mn phase derived from diffuse scattering measurements
A Letoublon, M De Boissieu, M Boudard, L Mancini, J Gastaldi, B Hennion, ...
Philosophical magazine letters 81 (4), 273-283, 2001
652001
Direct evidence of weakly dispersed and strongly anharmonic optical phonons in hybrid perovskites
AC Ferreira, S Paofai, A Létoublon, J Ollivier, S Raymond, B Hehlen, ...
Communications Physics 3 (1), 48, 2020
642020
Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots
JM Ulloa, C Celebi, PM Koenraad, A Simon, E Gapihan, A Letoublon, ...
Journal of applied physics 101 (8), 2007
642007
Self-organized growth of nanoparticles on a surface patterned by a buried dislocation network
F Leroy, G Renaud, A Letoublon, R Lazzari, C Mottet, J Goniakowski
Physical review letters 95 (18), 185501, 2005
622005
Diffraction anomalous fine-structure spectroscopy at beamline BM2 at the European Synchrotron Radiation Facility
H Renevier, S Grenier, S Arnaud, JF Bérar, B Caillot, JL Hodeau, ...
Journal of Synchrotron Radiation 10 (6), 435-444, 2003
522003
Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD–MBE growth cluster
T Quinci, J Kuyyalil, TN Thanh, YP Wang, S Almosni, A Létoublon, ...
Journal of Crystal Growth 380, 157-162, 2013
512013
Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon
T Nguyen Thanh, C Robert, W Guo, A Létoublon, C Cornet, G Elias, ...
Journal of applied physics 112 (5), 2012
502012
Room temperature operation of GaAsP (N)/GaP (N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen
C Robert, A Bondi, TN Thanh, J Even, C Cornet, O Durand, JP Burin, ...
Applied Physics Letters 98 (25), 2011
472011
X-ray study of antiphase domains and their stability in MBE grown GaP on Si
A Létoublon, W Guo, C Cornet, A Boulle, M Véron, A Bondi, O Durand, ...
Journal of Crystal Growth 323 (1), 409-412, 2011
452011
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