| Radiation-induced interface traps in hardened MOS transistors: an improved charge-pumping study JL Autran, C Chabrerie, P Paillet, O Flament, JL Leray, JC Boudenot IEEE Transactions on Nuclear Science 43 (6), 2547-2557, 1996 | 40 | 1996 |
| Use of the charge pumping technique with a sinusoidal gate waveform JL Autran, C Chabrerie Solid State Electronics 9 (39), 1394-1395, 1996 | 28 | 1996 |
| Isothermal and isochronal annealing methodology to study post-irradiation temperature activated phenomena C Chabrerie, JL Autran, P Paillet, O Flament, JL Leray, JC Boudenot IEEE Transactions on Nuclear Science 44 (6), 2007-2012, 1997 | 18 | 1997 |
| A methodology study lateral parasitic transistors in CMOS technologies O Flament, C Chabrerie, V Ferlet-Cavrois, JL Leray, F Faccio, P Jarron RADECS 97. Fourth European Conference on Radiation and its Effects on …, 1997 | 18 | 1997 |
| Method and device for the transmission of data between communicating mobile terminals C Chabrerie US Patent App. 12/095,571, 2010 | 14 | 2010 |
| Post-irradiation effects in a rad-hard technology C Chabrerie, O Musseau, O Flament, JL Leray, JC Boudenot, B Shipman, ... Proceedings of the Third European Conference on Radiation and its Effects on …, 1995 | 10 | 1995 |
| De l'utilisation des recuits isothermes et isochrones pour la caracterisation de structures mos irradiees. Application aux cinetiques des effets post-irradiation dans … C Chabrerie Paris 7, 1997 | 5 | 1997 |
| Annealing of stress-induced interface and border traps in MOS devices: a charge-pumping study JL Autran, O Flament, C Chabrerie, O Musseau, JL Leray ESSDERC'96: Proceedings of the 26th European Solid State Device Research …, 1996 | 5 | 1996 |
| Surface potential determination in irradiated MOS transistors combining current-voltage and charge pumping measurements P Masson, JL Autran, C Raynaud, O Flament, P Paillet, C Chabrerie IEEE Transactions on Nuclear Science 45 (3), 1355-1364, 1998 | 2 | 1998 |
| A new integrated test structure for on-chip post-irradiation annealing in MOS devices C Chabrerie, JL Autran, O Flamente, JC Boudenot IEEE Transactions on Nuclear Science 45 (3), 1438-1443, 1998 | 1 | 1998 |
| Methodology of Isochronal and Isothermal Anneals applied to Irradiated MOS Structures. Application to Post-Irradiation Effects (in Space, Accelerators) and Standard Test … C Chabrerie | 1 | 1997 |
| Modélisation et simulation numérique de phénomènes activés par la température: Application aux effets post-irradiation (PIE): Composants électroniques soumis à ridiations C Chabrerie, JL AUTRAN, P Paillet, O Flament, JL Leray, JC Boudenot REE. Revue de l'électricité et de l'électronique, 75-78, 1997 | | 1997 |
Jean-Luc AutranProfessor, Aix-Marseille University & Université de RennesAdresse e-mail validée de univ-amu.fr
