Shiheng Liang

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Stephane ManginInstitut Jean Lamour / Universite de LorraineAdresse e-mail validée de univ-lorraine.fr
henri JAFFRESUnite Mixte de Physique CNRS-ThalesAdresse e-mail validée de thalesgroup.com
Xavier MARIEProfessor of Physics, Institut National des Sciences Appliquées, LPCNO ToulouseAdresse e-mail validée de insa-toulouse.fr
Julien FrougierIBM ResearchAdresse e-mail validée de ibm.com
Hongxin YangNingbo Institute of Materials Technology and Engineering, Chinese Academy of SciencesAdresse e-mail validée de nimte.ac.cn
Mairbek ChshievProfessor of Physics, Univ. Grenoble Alpes, CEA, CNRS, IRIG/Spintec, GrenobleAdresse e-mail validée de univ-grenoble-alpes.fr
Xiaoguang Liuniversity of science and technology of chinaAdresse e-mail validée de ustc.edu.cn
Ram Chandra Subedi (RC)King Abdullah University of Science and TechnologyAdresse e-mail validée de kaust.edu.sa
Fabian CadizEcole PolytechniqueAdresse e-mail validée de polytechnique.edu
Baishun YangCSRCAdresse e-mail validée de mails.jlu.edu.cn
Piotr LaczkowskiPost-doc Unite Mixte CNRS/Thales PalaisauAdresse e-mail validée de thalesgroup.com
Daniel LacourUMR7198 CNRS ULAdresse e-mail validée de univ-lorraine.fr
Gang WangBeijing Institute of TechnologyAdresse e-mail validée de bit.edu.cn
Qinli MaHFC SemiconductorAdresse e-mail validée de hefechip.com
Thorsten HesjedalProfessor of Experimental Condensed Matter Physics, Clarendon Laboratory, University of OxfordAdresse e-mail validée de physics.ox.ac.uk
XG ZhangProfessor of Physics, Quantum Theory Project, University of FloridaAdresse e-mail validée de ufl.edu
Yunpeng WangCentral South University, ChinaAdresse e-mail validée de csu.edu.cn
Jia ZhangSchool of Physics, Huazhong University of Science and TechonologyAdresse e-mail validée de hust.edu.cn
Lu YouSoochow UniversityAdresse e-mail validée de suda.edu.cn
Junling WANGChair Professor, Department of Physics, Southern University of Science and Technology (SUSTech)Adresse e-mail validée de sustech.edu.cn

Shiheng Liang

Hubei University

Adresse e-mail validée de hubu.edu.cn

Spintronics Spin injection Nano-Fabrication


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
The study of interaction between graphene and metals by Raman spectroscopy WX Wang, SH Liang, T Yu, DH Li, YB Li, XF Han Journal of Applied Physics 109 (7), 07C501, 2011	178	2011
All-electric magnetization switching and Dzyaloshinskii–Moriya interaction in WTe 2/ferromagnet heterostructures S Shi, S Liang, Z Zhu, K Cai, SD Pollard, Y Wang, J Wang, Q Wang, P He, ... Nature nanotechnology 14 (10), 945-949, 2019	77	2019
Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector SH Liang, TT Zhang, P Barate, J Frougier, M Vidal, P Renucci, B Xu, ... Physical Review B 90 (8), 085310, 2014	50	2014
Electrical spin injection and detection in molybdenum disulfide multilayer channel S Liang, H Yang, P Renucci, B Tao, P Laczkowski, S Mc-Murtry, G Wang, ... Nature communications 8 (1), 1-9, 2017	49	2017
Curvature-enhanced spin-orbit coupling and spinterface effect in fullerene-based spin valves S Liang, R Geng, B Yang, W Zhao, RC Subedi, X Li, X Han, TD Nguyen Scientific reports 6 (1), 1-9, 2016	49	2016
Ferroelectric control of organic/ferromagnetic spinterface S Liang, H Yang, H Yang, B Tao, A Djeffal, M Chshiev, W Huang, X Li, ... Advanced Materials 28 (46), 10204-10210, 2016	43	2016
MgO (001) barrier based magnetic tunnel junctions and their device applications XF Han, SS Ali, SH Liang Science China Physics, Mechanics and Astronomy 56 (1), 29-60, 2013	30	2013
Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods P Barate, S Liang, TT Zhang, J Frougier, M Vidal, P Renucci, X Devaux, ... Applied Physics Letters 105 (1), 012404, 2014	29	2014
Organic magnetic tunnel junctions: The role of metal-molecule interface SH Liang, DP Liu, LL Tao, XF Han, H Guo Physical Review B 86 (22), 224419, 2012	28	2012
Tunneling magnetoresistance in Fe₃Si/MgO/Fe₃Si(001) magnetic tunnel junctions LL Tao, SH Liang, DP Liu, HX Wei, J Wang, XF Han Applied Physics Letters 104 (17), 172406, 2014	25	2014
Effect of interfacial structures on spin dependent tunneling in epitaxial L1₀-FePt/MgO/FePt perpendicular magnetic tunnel junctions G Yang, DL Li, SG Wang, QL Ma, SH Liang, HX Wei, XF Han, T Hesjedal, ... Journal of Applied Physics 117 (8), 083904, 2015	19	2015
First-principles study of MnAl for its application in MgO-based perpendicular magnetic tunnel junctions X Zhang, LL Tao, J Zhang, SH Liang, L Jiang, XF Han Applied Physics Letters 110 (25), 252403, 2017	15	2017
Characterization of stearic acid adsorption on Ni (111) surface by experimental and first-principles study approach SH Liang, T Yu, DP Liu, WX Wang, YP Wang, XF Han Journal of Applied Physics 109 (7), 07C115, 2011	15	2011
Tunneling magnetoresistance of FePt/NaCl/FePt (001) LL Tao, DP Liu, SH Liang, XF Han, H Guo EPL (Europhysics Letters) 105 (5), 58003, 2014	14	2014
Sparse neuromorphic computing based on spin-torque diodes J Cai, L Zhang, B Fang, W Lv, B Zhang, G Finocchio, R Xiong, S Liang, ... Applied Physics Letters 114 (19), 192402, 2019	13	2019
Bias dependence of the electrical spin injection into GaAs from Co-Fe-B/MgO injectors with different MgO growth processes P Barate, SH Liang, TT Zhang, J Frougier, B Xu, P Schieffer, M Vidal, ... Physical Review Applied 8, 054027, 2017	12	2017
Electrical initialization of electron and nuclear spins in a single quantum dot at zero magnetic field F Cadiz, A Djeffal, D Lagarde, A Balocchi, B Tao, B Xu, S Liang, M Stoffel, ... Nano letters 18 (4), 2381-2386, 2018	11	2018
Atomic-scale understanding of high thermal stability of the Mo/CoFeB/MgO spin injector for spin-injection in remanence B Tao, P Barate, X Devaux, P Renucci, J Frougier, A Djeffal, S Liang, B Xu, ... Nanoscale 10 (21), 10213-10220, 2018	11	2018
Large magnetoresistance of paracyclophane-based molecular tunnel junctions: a first-principles study LL Tao, SH Liang, DP Liu, XF Han Journal of Applied Physics 114 (21), 213906, 2013	11	2013
Spin orbit torque driven magnetization switching with sputtered Bi2Se3 spin current source R Ramaswamy, T Dutta, S Liang, G Yang, MSM Saifullah, H Yang Journal of Physics D: Applied Physics 52 (22), 224001, 2019	9	2019

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