Nicolas LOUBET
Nicolas LOUBET
IBM Research
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Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET
N Loubet, T Hook, P Montanini, CW Yeung, S Kanakasabapathy, ...
2017 Symposium on VLSI Technology, T230-T231, 2017
0.13 m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications
G Avenier, M Diop, P Chevalier, G Troillard, N Loubet, J Bouvier, ...
IEEE journal of solid-state circuits 44 (9), 2312-2321, 2009
Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications
K Cheng, A Khakifirooz, P Kulkarni, S Ponoth, J Kuss, D Shahrjerdi, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
FDSOI devices with thin BOX and ground plane integration for 32 nm node and below
C Fenouillet-Beranger, S Denorme, P Perreau, C Buj, O Faynot, F Andrieu, ...
Solid-State Electronics 53 (7), 730-734, 2009
High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET
K Cheng, A Khakifirooz, N Loubet, S Luning, T Nagumo, M Vinet, Q Liu, ...
2012 International Electron Devices Meeting, 18.1. 1-18.1. 4, 2012
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
R Xie, P Montanini, K Akarvardar, N Tripathi, B Haran, S Johnson, T Hook, ...
2016 IEEE International Electron Devices Meeting (IEDM), 2.7. 1-2.7. 4, 2016
Method of forming a fully substrate-isolated FinFET transistor
N Loubet, P Khare
US Patent 8,956,942, 2015
14nm FDSOI technology for high speed and energy efficient applications
O Weber, E Josse, F Andrieu, A Cros, E Richard, P Perreau, E Baylac, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
Fully-depleted SOI technology using high-k and single-metal gate for 32 nm node LSTP applications featuring 0.179 μm26T-SRAM bitcell
C Fenouillet-Beranger, S Denorme, B Icard, F Boeuf, J Coignus, O Faynot, ...
2007 IEEE International Electron Devices Meeting, 267-270, 2007
Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond
Q Liu, A Yagishita, N Loubet, A Khakifirooz, P Kulkarni, T Yamamoto, ...
2010 Symposium on VLSI Technology, 61-62, 2010
Device and method for treating skin
Z Karni
US Patent 6,981,970, 2006
Defect-free strain relaxed buffer layer
P Morin, K Cheng, J Fronheiser, X Cai, J Li, S Mochizuki, R Xie, H He, ...
US Patent App. 14/588,221, 2016
Ice maker for refrigerator and control method thereof
IS Kim, SY An
US Patent 6,637,217, 2003
Method to co-integrate SiGe and Si channels for finFET devices
N Loubet, P Khare, Q Liu
US Patent 9,685,380, 2017
Method to enable compressively strained pFET channel in a FinFET structure by implant and thermal diffusion
NC Berliner, P Kulkarni, N Loubet, K Maitra, SC Mehta, PA Ronsheim, ...
US Patent 8,900,973, 2014
UTBB FDSOI transistors with dual STI for a multi-Vt strategy at 20nm node and below
L Grenouillet, M Vinet, J Gimbert, B Giraud, JP Noel, Q Liu, P Khare, ...
2012 International Electron Devices Meeting, 3.6. 1-3.6. 4, 2012
High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond
Q Liu, M Vinet, J Gimbert, N Loubet, R Wacquez, L Grenouillet, Y Le Tiec, ...
2013 IEEE International Electron Devices Meeting, 9.2. 1-9.2. 4, 2013
Impact of back bias on ultra-thin body and BOX (UTBB) devices
Q Liu, F Monsieur, A Kumar, T Yamamoto, A Yagishita, P Kulkarni, ...
2011 Symposium on VLSI Technology-Digest of Technical Papers, 160-161, 2011
Cut-very-last dual-epi flow
VS Basker, H Bu, K Cheng, BS Haran, N Loubet, S Ponoth, S Schmitz, ...
US Patent 8,569,152, 2013
Thermoplastic silicone elastomers from compatibilized polyamide resins
CM Brewer, I Chorvath, FM Fournier, CS Gross, MKJ Lee, D Li, RL Rabe
US Patent 6,569,955, 2003
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