Electrical behavior of phase-change memory cells based on GeTe L Perniola, V Sousa, A Fantini, E Arbaoui, A Bastard, M Armand, ...
IEEE Electron Device Letters 31 (5), 488-490, 2010
162 2010 Reliable 300 mm wafer level hybrid bonding for 3D stacked CMOS image sensors S Lhostis, A Farcy, E Deloffre, F Lorut, S Mermoz, Y Henrion, L Berthier, ...
2016 IEEE 66th Electronic Components and Technology Conference (ECTC), 869-876, 2016
102 2016 Carbon-doped GeTe: a promising material for phase-change memories GB Beneventi, L Perniola, V Sousa, E Gourvest, S Maitrejean, JC Bastien, ...
Solid-State Electronics 65, 197-204, 2011
98 2011 Impact of oxidation on Ge2Sb2Te5 and GeTe phase-change properties E Gourvest, B Pelissier, C Vallée, A Roule, S Lhostis, S Maitrejean
Journal of The Electrochemical Society 159 (4), H373-H377, 2012
72 2012 Hybrid bonding for 3D stacked image sensors: impact of pitch shrinkage on interconnect robustness J Jourdon, S Lhostis, S Moreau, J Chossat, M Arnoux, C Sart, Y Henrion, ...
2018 IEEE International Electron Devices Meeting (IEDM), 7.3. 1-7.3. 4, 2018
68 2018 Evidence of Germanium precipitation in phase-change thin films by Raman scattering E Gourvest, S Lhostis, J Kreisel, M Armand, S Maitrejean, A Roule, ...
Applied Physics Letters 95 (3), 031908, 2009
59 2009 Comparative assessment of GST and GeTe materials for application to embedded phase-change memory devices A Fantini, L Perniola, M Armand, JF Nodin, V Sousa, A Persico, J Cluzel, ...
2009 IEEE International Memory Workshop, 1-2, 2009
55 2009 Thin films of the double perovskite Sr2FeMoO6 deposited by pulsed laser deposition RP Borges, S Lhostis, MA Bari, JJ Versluijs, JG Lunney, JMD Coey, ...
Thin Solid Films 429 (1-2), 5-12, 2003
55 2003 Thin films of the double perovskite Sr2FeMoO6 deposited by pulsed laser deposition RP Borges, S Lhostis, MA Bari, JJ Versluijs, JG Lunney, JMD Coey, ...
Thin Solid Films 429 (1-2), 5-12, 2003
55 2003 Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies C Dubourdieu, H Roussel, C Jimenez, M Audier, JP Sénateur, S Lhostis, ...
Materials Science and Engineering: B 118 (1-3), 105-111, 2005
50 2005 1μm pitch direct hybrid bonding with< 300nm Wafer-to-Wafer overlay accuracy A Jouve, V Balan, N Bresson, C Euvrard-Colnat, F Fournel, Y Exbrayat, ...
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2017
47 2017 Addition of yttrium into films: Microstructure and electrical properties C Dubourdieu, E Rauwel, H Roussel, F Ducroquet, B Holländer, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 27 (3 …, 2009
44 2009 Observation of HfO2 thin films by deep UV spectroscopic ellipsometry F Ferrieu, K Dabertrand, S Lhostis, V Ivanova, E Martinez, C Licitra, ...
Journal of Non-Crystalline Solids 353 (5-7), 658-662, 2007
44 2007 Proximity sensor including reference detector for stray radiation detection A Caley, PJ Parodi-Keravec, O Le Briz, S Lhostis
US Patent 9,535,157, 2017
43 2017 Angular and polarization properties of cross-holes nanostructured metallic filters R Girard-Desprolet, S Boutami, S Lhostis, G Vitrant
Optics express 21 (24), 29412-29424, 2013
41 2013 Theoretical and experimental study of a thermal damper based on a CNT/PCM composite structure for transient electronic cooling C Kinkelin, S Lips, U Soupremanien, V Remondière, J Dijon, H Le Poche, ...
Energy conversion and management 142, 257-271, 2017
39 2017 Chemical interface analysis of as grown ultrathin films on C Maunoury, K Dabertrand, E Martinez, M Saadoune, D Lafond, F Pierre, ...
Journal of applied physics 101 (3), 034112, 2007
35 2007 Global Shutter Quantum Dot Image Sensor Optimized for Near and Shortwave InfraredJS Steckel, E Josse, AG Pattantyus-Abraham, M Bidaud, B Mortini, ...
2021 IEEE International Electron Devices Meeting (IEDM), 23.4. 1-23.4. 4, 2021
30 2021 Crystallization study of “melt quenched” amorphous GeTe by transmission electron microscopy for phase change memory applications A Bastard, JC Bastien, B Hyot, S Lhostis, F Mompiou, C Bonafos, ...
Applied physics letters 99 (24), 243103, 2011
29 2011 < 200 nm Wafer-to-wafer overlay accuracy in wafer level Cu/SiO2 hybrid bonding for BSI CIS B Rebhan, M Bernauer, T Wagenleitner, M Heilig, F Kurz, S Lhostis, ...
2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC), 1-4, 2015
26 2015