Sandrine Lhostis
Sandrine Lhostis
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Electrical behavior of phase-change memory cells based on GeTe
L Perniola, V Sousa, A Fantini, E Arbaoui, A Bastard, M Armand, ...
IEEE Electron Device Letters 31 (5), 488-490, 2010
Carbon-doped GeTe: a promising material for phase-change memories
GB Beneventi, L Perniola, V Sousa, E Gourvest, S Maitrejean, JC Bastien, ...
Solid-State Electronics 65, 197-204, 2011
Reliable 300 mm wafer level hybrid bonding for 3D stacked CMOS image sensors
S Lhostis, A Farcy, E Deloffre, F Lorut, S Mermoz, Y Henrion, L Berthier, ...
2016 IEEE 66th Electronic Components and Technology Conference (ECTC), 869-876, 2016
Evidence of Germanium precipitation in phase-change thin films by Raman scattering
E Gourvest, S Lhostis, J Kreisel, M Armand, S Maitrejean, A Roule, ...
Applied Physics Letters 95 (3), 031908, 2009
Thin films of the double perovskite Sr2FeMoO6 deposited by pulsed laser deposition
RP Borges, S Lhostis, MA Bari, JJ Versluijs, JG Lunney, JMD Coey, ...
Thin Solid Films 429 (1-2), 5-12, 2003
Thin films of the double perovskite Sr2FeMoO6 deposited by pulsed laser deposition
RP Borges, S Lhostis, MA Bari, JJ Versluijs, JG Lunney, JMD Coey, ...
Thin Solid Films 429 (1-2), 5-12, 2003
Impact of oxidation on Ge2Sb2Te5 and GeTe phase-change properties
E Gourvest, B Pelissier, C Vallée, A Roule, S Lhostis, S Maitrejean
Journal of The Electrochemical Society 159 (4), H373-H377, 2012
Comparative assessment of GST and GeTe materials for application to embedded phase-change memory devices
A Fantini, L Perniola, M Armand, JF Nodin, V Sousa, A Persico, J Cluzel, ...
2009 IEEE International Memory Workshop, 1-2, 2009
Addition of yttrium into films: Microstructure and electrical properties
C Dubourdieu, E Rauwel, H Roussel, F Ducroquet, B Holländer, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 27 (3 …, 2009
Observation of HfO2 thin films by deep UV spectroscopic ellipsometry
F Ferrieu, K Dabertrand, S Lhostis, V Ivanova, E Martinez, C Licitra, ...
Journal of Non-Crystalline Solids 353 (5-7), 658-662, 2007
Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies
C Dubourdieu, H Roussel, C Jimenez, M Audier, JP Sénateur, S Lhostis, ...
Materials Science and Engineering: B 118 (1-3), 105-111, 2005
Angular and polarization properties of cross-holes nanostructured metallic filters
R Girard-Desprolet, S Boutami, S Lhostis, G Vitrant
Optics express 21 (24), 29412-29424, 2013
Chemical interface analysis of as grown ultrathin films on
C Maunoury, K Dabertrand, E Martinez, M Saadoune, D Lafond, F Pierre, ...
Journal of applied physics 101 (3), 034112, 2007
Theoretical and experimental study of a thermal damper based on a CNT/PCM composite structure for transient electronic cooling
C Kinkelin, S Lips, U Soupremanien, V Remondière, J Dijon, H Le Poche, ...
Energy conversion and management 142, 257-271, 2017
Hybrid bonding for 3D stacked image sensors: impact of pitch shrinkage on interconnect robustness
J Jourdon, S Lhostis, S Moreau, J Chossat, M Arnoux, C Sart, Y Henrion, ...
2018 IEEE International Electron Devices Meeting (IEDM), 7.3. 1-7.3. 4, 2018
Crystallization study of “melt quenched” amorphous GeTe by transmission electron microscopy for phase change memory applications
A Bastard, JC Bastien, B Hyot, S Lhostis, F Mompiou, C Bonafos, ...
Applied physics letters 99 (24), 243103, 2011
On Carbon doping to improve GeTe-based Phase-Change Memory data retention at high temperature
GB Beneventi, E Gourvest, A Fantini, L Perniola, V Sousa, S Maitrejean, ...
2010 IEEE International Memory Workshop, 1-4, 2010
1μm pitch direct hybrid bonding with< 300nm Wafer-to-Wafer overlay accuracy
A Jouve, V Balan, N Bresson, C Euvrard-Colnat, F Fournel, Y Exbrayat, ...
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2017
Proximity sensor including reference detector for stray radiation detection
A Caley, PJ Parodi-Keravec, O Le Briz, S Lhostis
US Patent 9,535,157, 2017
Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application
BS Sahu, F Gloux, A Slaoui, M Carrada, D Muller, J Groenen, C Bonafos, ...
Nanoscale research letters 6 (1), 177, 2011
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