Jiejie Zhu

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Xiaohua MaXidian UniversityAdresse e-mail validée de xidian.edu.cn
Ling YangXidian UniversityAdresse e-mail validée de xidian.edu.cn
Minhan MiXidian UniversityAdresse e-mail validée de xidian.edu.cn
Meng ZhangXidian UniversityAdresse e-mail validée de xidian.edu.cn
Pengfei WangXidian UniversityAdresse e-mail validée de stu.xidian.edu.cn
Yong Xie (ORCID: 0000-0001-7904-6...Visiting Professor @ ICMM CSIC, Case Western Reserve University, Ulm UniversityAdresse e-mail validée de xidian.edu.cn
Martin KuballUniversity of BristolAdresse e-mail validée de bristol.ac.uk
Fuchun JiaSchool of Microelectronics, Xidian UniversityAdresse e-mail validée de stu.xidian.edu.cn
Xiaoli LuProfessor of Microelectronics, Xidian UniversityAdresse e-mail validée de xidian.edu.cn
Yichun ZhouXidian UniversityAdresse e-mail validée de xidian.edu.cn
Mao-Chou, TaiNational Sun Yat Sen University, Department of PhotonicsAdresse e-mail validée de student.nsysu.edu.tw
jincheng zhangXidian University

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Jiejie Zhu

Xidian University

Adresse e-mail validée de mail.xidian.edu.cn - Page d'accueil

Wide Bandgap Semiconductor、Thin Film、Device Fabrication


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Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by dynamic capacitance dispersion technique XH Ma, JJ Zhu, XY Liao, T Yue, WW Chen, Y Hao Applied Physics Letters 103 (3), 2013	106	2013
Improved interface and transport properties of AlGaN/GaN MIS-HEMTs with PEALD-grown AlN gate dielectric JJ Zhu, XH Ma, Y Xie, B Hou, WW Chen, JC Zhang, Y Hao IEEE Transactions on Electron Devices 62 (2), 512-518, 2014	87	2014
Ferroelectric gate AlGaN/GaN E-mode HEMTs with high transport and sub-threshold performance J Zhu, L Chen, J Jiang, X Lu, L Yang, B Hou, M Liao, Y Zhou, X Ma, Y Hao IEEE Electron Device Letters 39 (1), 79-82, 2017	37	2017
Millimeter-wave power AlGaN/GaN HEMT using surface plasma treatment of access region M Mi, XH Ma, L Yang, Y Lu, B Hou, J Zhu, M Zhang, HS Zhang, Q Zhu, ... IEEE Transactions on Electron Devices 64 (12), 4875-4881, 2017	37	2017
Investigation of gate leakage mechanism in Al2O3/Al0. 55Ga0. 45N/GaN metal-oxide-semiconductor high-electron-mobility transistors JJ Zhu, XH Ma, B Hou, WW Chen, Y Hao Applied Physics Letters 104 (15), 2014	37	2014
90 nm gate length enhancement-mode AlGaN/GaN HEMTs with plasma oxidation technology for high-frequency application MH Mi, XH Ma, L Yang, BH Bin-Hou, JJ Zhu, YL He, M Zhang, S Wu, ... Applied Physics Letters 111 (17), 2017	31	2017
Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis JJ Zhu, XH Ma, B Hou, WW Chen, Y Hao Aip Advances 4 (3), 2014	31	2014
Influence of defects in n−-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors DG Zhao, DS Jiang, JJ Zhu, ZS Liu, SM Zhang, JW Liang, H Yang, X Li, ... Applied physics letters 90 (6), 2007	30	2007
Enhanced g_m and f_T With High Johnson’s Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge L Yang, M Mi, B Hou, H Zhang, J Zhu, Q Zhu, Y Lu, M Zhang, Y He, ... IEEE Electron Device Letters 38 (11), 1563-1566, 2017	29	2017
Influence of fin-like configuration parameters on the linearity of AlGaN/GaN HEMTs P Wang, X Ma, M Mi, M Zhang, J Zhu, Y Zhou, S Wu, J Liu, L Yang, B Hou, ... IEEE Transactions on Electron Devices 68 (4), 1563-1569, 2021	28	2021
High Channel Conductivity, Breakdown Field Strength, and Low Current Collapse in AlGaN/GaN/Si -Doped AlGaN/GaN:C HEMTs L Yang, M Zhang, B Hou, M Mi, M Wu, Q Zhu, J Zhu, Y Lu, L Chen, X Zhou, ... IEEE Transactions on Electron Devices 66 (3), 1202-1207, 2019	28	2019
High linearity and high power performance with barrier layer of sandwich structure and Al0. 05GaN back barrier for X-band application B Hou, L Yang, M Mi, M Zhang, C Yi, M Wu, Q Zhu, Y Lu, J Zhu, X Zhou, ... Journal of Physics D: Applied Physics 53 (14), 145102, 2020	25	2020
An overview on analyses and suppression methods of trapping effects in AlGaN/GaN HEMTs R Ye, X Cai, C Du, H Liu, Y Zhang, X Duan, J Zhu IEEE Access 10, 21759-21773, 2021	24	2021
Investigation of trap states under Schottky contact in GaN/AlGaN/AlN/GaN high electron mobility transistors XH Ma, WW Chen, B Hou, K Zhang, JJ Zhu, JC Zhang, XF Zheng, Y Hao Applied Physics Letters 104 (9), 2014	21	2014
Analysis of low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs for terminal applications Y Zhou, J Zhu, M Mi, M Zhang, P Wang, Y Han, S Wu, J Liu, Q Zhu, ... IEEE Journal of the Electron Devices Society 9, 756-762, 2021	19	2021
High-performance enhancement-mode AlGaN/GaN high electron mobility transistors combined with TiN-based source contact ledge and two-step fluorine treatment L Yang, B Hou, M Mi, Q Zhu, M Wu, J Zhu, Y Lu, M Zhang, L Chen, X Zhou, ... IEEE Electron Device Letters 39 (10), 1544-1547, 2018	18	2018
Impact of Recess Etching on the Temperature-Dependent Characteristics of GaN-Based MIS-HEMTs With Al₂O₃/AlN Gate-Stack J Zhu, Q Zhu, L Chen, B Hou, L Yang, X Zhou, X Ma, Y Hao IEEE Transactions on Electron Devices 64 (3), 840-847, 2017	18	2017
Polarization engineering in PZT/AlGaN/GaN high-electron-mobility transistors L Chen, X Ma, J Zhu, B Hou, F Song, Q Zhu, M Zhang, L Yang, Y Hao IEEE Transactions on Electron Devices 65 (8), 3149-3155, 2018	17	2018
0.9-A/mm, 2.6-V Flash-Like Normally-Off Al₂O₃/AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique B Hou, X Ma, J Zhu, L Yang, W Chen, M Mi, Q Zhu, L Chen, R Zhang, ... IEEE Electron Device Letters 39 (3), 397-400, 2018	17	2018
Variable range hopping mechanism and modeling of isolation leakage current in GaN-based high-electron-mobility transistors J Zhu, Y Zhang, MJ Uren, S Liu, P Wang, M Mi, B Hou, L Yang, M Kuball, ... Applied Physics Letters 116 (22), 2020	16	2020

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