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Engineered substrates for future More Moore and More than Moore integrated devices
L Clavelier, C Deguet, L Di Cioccio, E Augendre, A Brugere, P Gueguen, ...
2010 International Electron Devices Meeting, 2.6. 1-2.6. 4, 2010
Multiple gate devices: advantages and challenges
T Poiroux, M Vinet, O Faynot, J Widiez, J Lolivier, T Ernst, B Previtali, ...
Microelectronic Engineering 80, 378-385, 2005
3DVLSI with CoolCube process: An alternative path to scaling
P Batude, C Fenouillet-Beranger, L Pasini, V Lu, F Deprat, L Brunet, ...
2015 Symposium on VLSI Technology (VLSI Technology), T48-T49, 2015
Bonded planar double-metal-gate NMOS transistors down to 10 nm
M Vinet, T Poiroux, J Widiez, J Lolivier, B Previtali, C Vizioz, B Guillaumot, ...
IEEE Electron Device Letters 26 (5), 317-319, 2005
Lasing in strained germanium microbridges
FT Armand Pilon, A Lyasota, YM Niquet, V Reboud, V Calvo, N Pauc, ...
Nature communications 10 (1), 2724, 2019
Experimental evaluation of gate architecture influence on DG SOI MOSFETs performance
J Widiez, J Lolivier, M Vinet, T Poiroux, B Previtali, F Daugé, M Mouis, ...
IEEE Transactions on Electron Devices 52 (8), 1772-1779, 2005
1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications
A Gassenq, K Guilloy, G Osvaldo Dias, N Pauc, D Rouchon, JM Hartmann, ...
Applied Physics Letters 107 (19), 2015
Manufacturing method for a semiconductor on insulator type substrate for radiofrequency applications
F Allibert, J Widiez
US Patent 9,129,800, 2015
Germanium based photonic components toward a full silicon/germanium photonic platform
V Reboud, A Gassenq, JM Hartmann, J Widiez, L Virot, J Aubin, K Guilloy, ...
Progress in Crystal growth and Characterization of Materials 63 (2), 1-24, 2017
Germanium under high tensile stress: nonlinear dependence of direct band gap vs strain
K Guilloy, N Pauc, A Gassenq, YM Niquet, JM Escalante, I Duchemin, ...
ACS photonics 3 (10), 1907-1911, 2016
Raman-strain relations in highly strained Ge: Uniaxial⟨ 100⟩,⟨ 110⟩ and biaxial (001) stress
A Gassenq, S Tardif, K Guilloy, I Duchemin, N Pauc, JM Hartmann, ...
Journal of Applied Physics 121 (5), 2017
Accurate strain measurements in highly strained Ge microbridges
A Gassenq, S Tardif, K Guilloy, G Osvaldo Dias, N Pauc, I Duchemin, ...
Applied Physics Letters 108 (24), 2016
Experimental determination of the channel backscattering coefficient on 10–70 nm-metal-gate double-gate transistors
V Barral, T Poiroux, M Vinet, J Widiez, B Previtali, P Grosgeorges, ...
Solid-State Electronics 51 (4), 537-542, 2007
Multigate silicon MOSFETs for 45 nm node and beyond
T Poiroux, M Vinet, O Faynot, J Widiez, J Lolivier, B Previtali, T Ernst, ...
Solid-state electronics 50 (1), 18-23, 2006
Silicon-On-Diamond layer integration by wafer bonding technology
M Rabarot, J Widiez, S Saada, JP Mazellier, C Lecouvey, JC Roussin, ...
Diamond and related materials 19 (7-9), 796-805, 2010
Internal photoemission over HfO2 and Hf (1-x) SixO2 high-k insulating barriers: Band offset and interfacial dipole characterization
J Widiez, K Kita, K Tomida, T Nishimura, A Toriumi
Japanese journal of applied physics 47 (4S), 2410, 2008
Experimental Comparison Between Sub-0.1-Ultrathin SOI Single- and Double-Gate MOSFETs: Performance and Mobility
J Widiez, T Poiroux, M Vinet, M Mouis, S Deleonibus
IEEE transactions on nanotechnology 5 (6), 643-648, 2006
Experimental gate misalignment analysis on double gate SOI MOSFETs
J Widiez, F Dauge, M Vinet, T Poiroux, B Previtali, M Mouis, S Deleonibus
2004 IEEE International SOI Conference (IEEE Cat. No. 04CH37573), 185-186, 2004
Spin transport in p-type germanium
F Rortais, S Oyarzún, F Bottegoni, JC Rojas-Sánchez, P Laczkowski, ...
Journal of Physics: Condensed Matter 28 (16), 165801, 2016
SOI-type bonded structures for advanced technology nodes
J Widiez, JM Hartmann, F Mazen, S Sollier, C Veytizou, Y Bogumilowicz, ...
ECS Transactions 64 (5), 35, 2014
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