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Marco Pala
Marco Pala
C2N, CNRS, Université Paris-Saclay
Adresse e-mail validée de c2n.upsaclay.fr
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Spin-orbit coupling and phase coherence in InAs nanowires
SE Hernández, M Akabori, K Sladek, C Volk, S Alagha, H Hardtdegen, ...
Physical Review B 82 (23), 235303, 2010
1162010
Strain-induced performance improvements in InAs nanowire tunnel FETs
F Conzatti, MG Pala, D Esseni, E Bano, L Selmi
IEEE transactions on electron devices 59 (8), 2085-2092, 2012
1132012
Superconducting proximity effect in interacting double-dot systems
J Eldridge, MG Pala, M Governale, J König
Physical Review B 82 (18), 184507, 2010
1032010
Real-time diagrammatic approach to transport through interacting quantum dots with normal and superconducting leads
M Governale, MG Pala, J König
Physical Review B 77 (13), 134513, 2008
1022008
Size dependence of surface-roughness-limited mobility in silicon-nanowire FETs
S Poli, MG Pala, T Poiroux, S Deleonibus, G Baccarani
IEEE Transactions on Electron Devices 55 (11), 2968-2976, 2008
982008
Interface traps in InAs nanowire tunnel-FETs and MOSFETs—Part I: Model description and single trap analysis in tunnel-FETs
MG Pala, D Esseni
IEEE transactions on electron devices 60 (9), 2795-2801, 2013
962013
On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations
H Sellier, B Hackens, MG Pala, F Martins, S Baltazar, X Wallart, ...
Semiconductor science and technology 26 (6), 064008, 2011
942011
Imaging electron wave functions inside open quantum rings
F Martins, B Hackens, MG Pala, T Ouisse, H Sellier, X Wallart, S Bollaert, ...
Physical review letters 99 (13), 136807, 2007
872007
Suppression of weak antilocalization in Ga x In 1− x As∕ InP narrow quantum wires
T Schäpers, VA Guzenko, MG Pala, U Zülicke, M Governale, J Knobbe, ...
Physical Review B 74 (8), 081301, 2006
822006
A review of selected topics in physics based modeling for tunnel field-effect transistors
D Esseni, M Pala, P Palestri, C Alper, T Rollo
Semiconductor Science and Technology 32 (8), 083005, 2017
742017
Impact of interface traps on the IV curves of InAs tunnel-FETs and MOSFETs: A full quantum study
MG Pala, D Esseni, F Conzatti
2012 international Electron devices meeting, 6.6. 1-6.6. 4, 2012
712012
Imaging Coulomb islands in a quantum Hall interferometer
B Hackens, F Martins, S Faniel, CA Dutu, H Sellier, S Huant, M Pala, ...
Nature communications 1 (1), 39, 2010
692010
Interface traps in InAs nanowire tunnel FETs and MOSFETs—Part II: Comparative analysis and trap-induced variability
D Esseni, MG Pala
IEEE transactions on electron devices 60 (9), 2802-2807, 2013
662013
Transport inefficiency in branched-out mesoscopic networks: An analog of the Braess paradox
MG Pala, S Baltazar, P Liu, H Sellier, B Hackens, F Martins, V Bayot, ...
Physical review letters 108 (7), 076802, 2012
662012
Three-dimensional real-space simulation of surface roughness in silicon nanowire FETs
C Buran, MG Pala, M Bescond, M Dubois, M Mouis
IEEE transactions on electron devices 56 (10), 2186-2192, 2009
632009
Phonon-and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs
K Rogdakis, S Poli, E Bano, K Zekentes, MG Pala
Nanotechnology 20 (29), 295202, 2009
622009
Nonlocal Andreev transport through an interacting quantum dot
D Futterer, M Governale, MG Pala, J König
Physical Review B 79 (5), 054505, 2009
612009
Superconducting proximity effect in interacting quantum dots revealed by shot noise
A Braggio, M Governale, MG Pala, J König
Solid State Communications 151 (2), 155-158, 2011
592011
Local density of states in mesoscopic samples from scanning gate microscopy
MG Pala, B Hackens, F Martins, H Sellier, V Bayot, S Huant, T Ouisse
Physical Review B 77 (12), 125310, 2008
562008
Surface-roughness-induced variability in nanowire InAs tunnel FETs
F Conzatti, MG Pala, D Esseni
IEEE electron device letters 33 (6), 806-808, 2012
552012
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