| Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy Z Chine, H Fitouri, I Zaied, A Rebey, B El Jani Semiconductor Science and Technology 25 (6), 065009, 2010 | 63 | 2010 |
| Effect of thermal annealing on structural and optical properties of the GaAs0. 963Bi0. 037 alloy I Moussa, H Fitouri, Z Chine, A Rebey, B El Jani Semiconductor science and technology 23 (12), 125034, 2008 | 54 | 2008 |
| Heavily silicon-doped GaN by MOVPE I Halidou, Z Benzarti, Z Chine, T Boufaden, B El Jani Microelectronics journal 32 (2), 137-142, 2001 | 41 | 2001 |
| Stress and density of defects in Si‐doped GaN Z Chine, A Rebey, H Touati, E Goovaerts, M Oueslati, BE Jani, S Laugt physica status solidi (a) 203 (8), 1954-1961, 2006 | 34 | 2006 |
| Growth of GaAsBi alloy under alternated bismuth flows by metalorganic vapor phase epitaxy Z Chine, H Fitouri, I Zaied, A Rebey, B El Jani Journal of crystal growth 330 (1), 35-38, 2011 | 29 | 2011 |
| Photoreflectance investigation of band gap renormalization and the Burstein–Moss effect in Si doped GaN grown by MOVPE M Bouzidi, Z Benzarti, I Halidou, S Soltani, Z Chine, BEL Jani Materials Science in Semiconductor Processing 42, 273-276, 2016 | 27 | 2016 |
| Time-resolved photoluminescence and photoreflectance spectroscopy of GaN layers grown on SiN-treated sapphire substrate: Optical properties evolution at different growth stages M Bouzidi, S Soltani, Z Chine, A Rebey, MK Shakfa optical materials 73, 252-259, 2017 | 19 | 2017 |
| Photoreflectance study of GaN grown on SiN treated sapphire substrate by MOVPE M Bouzidi, Z Benzarti, I Halidou, Z Chine, A Bchetnia, B El Jani Superlattices and Microstructures 84, 13-23, 2015 | 17 | 2015 |
| Photoluminescence of V-doped GaN thin films grown by MOVPE technique M Souissi, Z Chine, A Bchetnia, H Touati, B El Jani Microelectronics journal 37 (1), 1-4, 2006 | 16 | 2006 |
| Anti-stokes photoluminescence of yellow band in GaN: evidence of two-photon excitation process Z Chine, B Piriou, M Oueslati, T Boufaden, B El Jani Journal of luminescence 82 (1), 81-84, 1999 | 15 | 1999 |
| Optical properties study of In. 08Ga. 92As/GaAs using spectral reflectance, photoreflectance and near-infrared Photoluminescence N Tounsi, MM Habchi, Z Chine, A Rebey, B El Jani Superlattices and Microstructures 59, 133-143, 2013 | 12 | 2013 |
| Atmospheric-pressure metal–organic vapor-phase epitaxy of GaAsBi alloys on high-index GaAs substrates I Zaied, H Fitouri, Z Chine, A Rebey, B El Jani Journal of Physics and Chemistry of solids 75 (2), 244-251, 2014 | 10 | 2014 |
| Near-infrared photoluminescence of V-doped GaN H Touati, M Souissi, Z Chine, B El Jani Microelectronics journal 39 (12), 1457-1460, 2008 | 10 | 2008 |
| Photoluminescence of GaAsBi/GaAs quantum dots grown by metalorganic vapor phase epitaxy H Fitouri, K Chakir, Z Chine, A Rebey, B El Jani Materials Letters 152, 45-47, 2015 | 9 | 2015 |
| Photoreflectance investigation of exciton-acoustic phonon scattering in GaN grown by MOVPE M Bouzidi, S Soltani, I Halidou, Z Chine, B El Jani Solid State Sciences 54, 59-63, 2016 | 6 | 2016 |
| The GaN Growth by a Hot Filament Metalorganic Vapor Phase Deposition Technique T Boufaden, A Rebey, I Halidou, Z Chine, S Haffouz, B El Jani physica status solidi (a) 176 (1), 411-414, 1999 | 6 | 1999 |
| Very high silicon concentration by MOVPE in GaAs L Beji, Z Chine, B El Jani, M Oueslati physica status solidi (a) 168 (2), 453-462, 1998 | 6 | 1998 |
| Luminescence dynamics in AlGaN with AlN content of 20% S Soltani, M Bouzidi, A Touré, M Gerhard, I Halidou, Z Chine, B El Jani, ... physica status solidi (a) 214 (4), 1600481, 2017 | 5 | 2017 |
| Comparative study between electrical, optical and structural properties of annealed heavily carbon doped GaAs A Rebey, Z Chine, W Fathallah, B El Jani, E Goovaerts, S Laugt Microelectronics journal 35 (11), 875-880, 2004 | 4 | 2004 |
| Comprehensive study of the structural, optical and electrical properties of InAlAs: Mg films lattice matched to InP grown by MOVPE M Ezzedini, M Bouzidi, MM Qaid, Z Chine, A Rebey, L Sfaxi Journal of Materials Science: Materials in Electronics 28, 18221-18227, 2017 | 3 | 2017 |
