Analytical model and parameter extraction to account for the pad parasitics in RF-CMOS R Torres-Torres, R Murphy-Arteaga, JA Reynoso-Hernández
IEEE Transactions on Electron Devices 52 (7), 1335-1342, 2005
96 2005 MOSFET bias dependent series resistance extraction from RF measurements R Torres-Torres, RS Murphy-Arteaga, S Decoutere
Electronics Letters 39 (20), 1476-1478, 2003
56 2003 A review of DC extraction methods for MOSFET series resistance and mobility degradation model parameters A Ortiz-Conde, A Sucre-González, F Zárate-Rincón, R Torres-Torres, ...
Microelectronics Reliability 69, 1-16, 2017
49 2017 On the origin of light emission in silicon rich oxide obtained by low-pressure chemical vapor deposition M Aceves-Mijares, AA González-Fernández, R López-Estopier, ...
Journal of Nanomaterials 2012, 5-5, 2012
38 2012 MOSFET gate resistance determination R Torres-Torres, RS Murphy-Arteaga, S Decoutere
Electronics Letters 39 (2), 1, 2003
27 2003 RF low-noise amplifiers in BiCMOS technologies F Carreto-Castro, J Silva-Martinez, R Murphy-Arteaga
IEEE Transactions on Circuits and Systems II: Analog and Digital Signal …, 1999
27 1999 Straightforward determination of small-signal model parameters for bulk RF-MOSFETs R Torres-Torres, R Murphy-Arteaga
Proceedings of the Fifth IEEE International Caracas Conference on Devices …, 2004
26 2004 Miniature patch and slot microstrip arrays for IoT and ISM band applications KN Olan-Nuñez, RS Murphy-Arteaga, E Colín-Beltrán
IEEE Access 8, 102846-102854, 2020
25 2020 A DC method to extract mobility degradation and series resistance of multifinger microwave MOSFETs A Sucre-González, F Zárate-Rincón, A Ortiz-Conde, R Torres-Torres, ...
IEEE Transactions on Electron Devices 63 (5), 1821-1826, 2016
21 2016 Electrical characterization of n-type a-SiGe: H/p-type crystalline-silicon heterojunctions P Rosales-Quintero, A Torres-Jacome, R Murphy-Arteaga, ...
Semiconductor science and technology 19 (3), 366, 2003
21 2003 Impact of technology scaling on the input and output features of RF-MOSFETs: effects and modeling R Torres-Torres, R Murphy-Arteaga, E Augendre, S Decoutere
ESSDERC'03. 33rd Conference on European Solid-State Device Research, 2003 …, 2003
17 2003 A novel metamaterial-based antenna for on-chip applications for the 72.5–81 GHz frequency range KN Olan-Nuñez, RS Murphy-Arteaga
Scientific Reports 12 (1), 1699, 2022
16 2022 Using S-parameter measurements to determine the threshold voltage, gain factor, and mobility degradation factor for microwave bulk-MOSFETs G Álvarez-Botero, R Torres-Torres, R Murphy-Arteaga
Microelectronics Reliability 51 (2), 342-349, 2011
16 2011 Characterization of Hot-Carrier-Induced RF-MOSFET Degradation at Different Bulk Biasing Conditions From F Zárate-Rincón, D Garcia-Garcia, VH Vega-Gonzalez, R Torres-Torres, ...
IEEE Transactions on Microwave Theory and Techniques 64 (1), 125-132, 2015
14 2015 Modeling the impact of multi-fingering microwave MOSFETs on the source and drain resistances F Zárate-Rincón, RS Murphy-Arteaga, R Torres-Torres, A Ortiz-Conde, ...
IEEE Transactions on Microwave Theory and Techniques 62 (12), 3255-3261, 2014
14 2014 A new analytical method to calculate the characteristic impedance ZC of uniform transmission lines JE Zúñiga-Juárez, JA Reynoso-Hernández, MC Maya-Sánchez, ...
Computación y Sistemas 16 (3), 277-285, 2012
14 2012 Fabrication, characterisation and modelling of integrated on-silicon inductors R Murphy-Arteaga, J Huerta-Chua, A Dı́az-Sánchez, A Torres-Jácome, ...
Microelectronics Reliability 43 (2), 195-201, 2003
14 2003 Conductance-to-current-ratio-based parameter extraction in MOS leakage current models A Ortiz-Conde, A Sucre-González, R Torres-Torres, J Molina, ...
IEEE Transactions on Electron Devices 63 (10), 3844-3850, 2016
13 2016 Characterization of RF-MOSFETs in common-source configuration at different source-to-bulk voltages from S-Parameters F Zárate-Rincón, GA Álvarez-Botero, R Torres-Torres, ...
IEEE transactions on electron devices 60 (8), 2450-2456, 2013
13 2013 Modeling Transmission Lines on Silicon in the Frequency and Time Domains from SC Sejas-Garcia, R Torres-Torres, RS Murphy-Arteaga
IEEE transactions on electron devices 59 (6), 1803-1806, 2012
12 2012 