Alexandre Tallaire
Alexandre Tallaire
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Characterisation of high-quality thick single-crystal diamond grown by CVD with a low nitrogen addition
A Tallaire, AT Collins, D Charles, J Achard, R Sussmann, A Gicquel, ...
Diamond and related materials 15 (10), 1700-1707, 2006
High quality MPACVD diamond single crystal growth: high microwave power density regime
J Achard, F Silva, A Tallaire, X Bonnin, G Lombardi, K Hassouni, ...
Journal of Physics D: Applied Physics 40 (20), 6175, 2007
Growth of large size diamond single crystals by plasma assisted chemical vapour deposition: Recent achievements and remaining challenges
A Tallaire, J Achard, F Silva, O Brinza, A Gicquel
Comptes Rendus Physique 14 (2-3), 169-184, 2013
Perfect preferential orientation of nitrogen-vacancy defects in a synthetic diamond sample
M Lesik, JP Tetienne, A Tallaire, J Achard, V Mille, A Gicquel, JF Roch, ...
Applied Physics Letters 104 (11), 2014
Diamond-based RF power transistors: Fundamentals and applications
M Kasu, K Ueda, Y Yamauchi, A Tallaire, T Makimoto
Diamond and Related Materials 16 (4-7), 1010-1015, 2007
The control of growth parameters in the synthesis of high-quality single crystalline diamond by CVD
J Achard, A Tallaire, R Sussmann, F Silva, A Gicquel
Journal of Crystal Growth 284 (3-4), 396-405, 2005
Coupled effect of nitrogen addition and surface temperature on the morphology and the kinetics of thick CVD diamond single crystals
J Achard, F Silva, O Brinza, A Tallaire, A Gicquel
Diamond and related materials 16 (4-7), 685-689, 2007
Homoepitaxial deposition of high-quality thick diamond films: effect of growth parameters
A Tallaire, J Achard, F Silva, RS Sussmann, A Gicquel
Diamond and related materials 14 (3-7), 249-254, 2005
Magnetic imaging with an ensemble of nitrogen-vacancy centers in diamond
M Chipaux, A Tallaire, J Achard, S Pezzagna, J Meijer, V Jacques, ...
The European Physical Journal D 69, 1-10, 2015
Surface transfer doping of diamond by MoO3: A combined spectroscopic and Hall measurement study
SAO Russell, L Cao, D Qi, A Tallaire, KG Crawford, ATS Wee, DAJ Moran
Applied Physics Letters 103 (20), 2013
Photonic nano-structures on (111)-oriented diamond
E Neu, P Appel, M Ganzhorn, J Miguel-Sánchez, M Lesik, V Mille, ...
Applied Physics Letters 104 (15), 2014
Oxygen plasma pre‐treatments for high quality homoepitaxial CVD diamond deposition
A Tallaire, J Achard, F Silva, RS Sussmann, A Gicquel, E Rzepka
physica status solidi (a) 201 (11), 2419-2424, 2004
Thick boron doped diamond single crystals for high power electronics
J Achard, F Silva, R Issaoui, O Brinza, A Tallaire, H Schneider, K Isoird, ...
Diamond and Related Materials 20 (2), 145-152, 2011
Microwave device characterization using a widefield diamond microscope
A Horsley, P Appel, J Wolters, J Achard, A Tallaire, P Maletinsky, ...
Physical Review Applied 10 (4), 044039, 2018
Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability
KG Crawford, L Cao, D Qi, A Tallaire, E Limiti, C Verona, ATS Wee, ...
Applied Physics Letters 108 (4), 2016
Screening and engineering of colour centres in diamond
T Lühmann, N Raatz, R John, M Lesik, J Rödiger, M Portail, D Wildanger, ...
Journal of Physics D: Applied Physics 51 (48), 483002, 2018
Etch‐pit formation mechanism induced on HPHT and CVD diamond single crystals by H2/O2 plasma etching treatment: Part of Topical Section on Fundamentals …
M Naamoun, A Tallaire, F Silva, J Achard, P Doppelt, A Gicquel
physica status solidi (a) 209 (9), 1715-1720, 2012
Origin of growth defects in CVD diamond epitaxial films
A Tallaire, M Kasu, K Ueda, T Makimoto
Diamond and Related Materials 17 (1), 60-65, 2008
Initialization and readout of nuclear spins via a negatively charged silicon-vacancy center in diamond
MH Metsch, K Senkalla, B Tratzmiller, J Scheuer, M Kern, J Achard, ...
Physical review letters 122 (19), 190503, 2019
Chemical vapour deposition diamond single crystals with nitrogen-vacancy centres: a review of material synthesis and technology for quantum sensing applications
J Achard, V Jacques, A Tallaire
Journal of Physics D: Applied Physics 53 (31), 313001, 2020
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