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Hassan El Dirani
Hassan El Dirani
PhD Student, STMicroelectronics
Adresse e-mail validée de st.com
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Année
A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters
S Cristoloveanu, KH Lee, MS Parihar, H El Dirani, J Lacord, S Martinie, ...
Solid-State Electronics 143, 10-19, 2018
572018
Extended Analysis of the -FET: Operation as Capacitorless eDRAM
C Navarro, J Lacord, MS Parihar, F Adamu-Lema, M Duan, N Rodriguez, ...
IEEE Transactions on Electron Devices 64 (11), 4486-4491, 2017
442017
-FET as Capacitor-Less eDRAM Cell For High-Density Integration
C Navarro, M Duan, MS Parihar, F Adamu-Lema, S Coseman, J Lacord, ...
IEEE Transactions on Electron Devices 64 (12), 4904-4909, 2017
352017
Experimental Demonstration of Operational Z2-FET Memory Matrix
S Navarro, C Navarro, C Marquez, H El Dirani, P Galy, M Bawedin, ...
IEEE Electron Device Letters 39 (5), 660-663, 2018
322018
Properties and mechanisms of Z2-FET at variable temperature
H El Dirani, Y Solaro, P Fonteneau, P Ferrari, S Cristoloveanu
Solid-State Electronics 115, 201-206, 2016
282016
Sharp-switching band-modulation back-gated devices in advanced FDSOI technology
H El Dirani, P Fonteneau, Y Solaro, CA Legrand, D Marin-Cudraz, ...
Solid-State Electronics 128, 180-186, 2017
212017
Sharp-switching Z2-FET device in 14 nm FDSOI technology
H El Dirani, Y Solaro, P Fonteneau, P Ferrari, S Cristoloveanu
2015 45th European Solid State Device Research Conference (ESSDERC), 250-253, 2015
212015
Low-power Z2-FET capacitorless 1T-DRAM
MS Parihar, KH Lee, H El Dirani, C Navarro, J Lacord, S Martinie, ...
2017 IEEE International Memory Workshop (IMW), 1-4, 2017
182017
Insight into carrier lifetime impact on band-modulation devices
MS Parihar, KH Lee, HJ Park, J Lacord, S Martinie, JC Barbé, Y Xu, ...
Solid-State Electronics 143, 41-48, 2018
172018
Competitive 1T-DRAM in 28 nm FDSOI technology for low-power embedded memory
H El Dirani, M Bawedin, K Lee, M Parihar, X Mescot, P Fonteneau, P Galy, ...
2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2016
162016
Ultra-low power 1T-DRAM in FDSOI technology
H El Dirani, KH Lee, MS Parihar, J Lacord, S Martinie, JC Barbe, X Mescot, ...
Microelectronic Engineering 178, 245-249, 2017
142017
Sharp logic switch based on band modulation
KH Lee, H El Dirani, P Fonteneau, M Bawedin, S Cristoloveanu
IEEE Electron Device Letters 40 (11), 1852-1855, 2019
122019
Novel FDSOI band-modulation device: Z2-FET with Dual Ground Planes
H El Dirani, P Fonteneau, Y Solaro, P Ferrari, S Cristoloveanu
2016 46th European Solid-State Device Research Conference (ESSDERC), 210-213, 2016
122016
A sharp-switching gateless device (Z3-FET) in advanced FDSOI technology
H El Dirani, Y Solaro, P Fonteneau, CA Legrand, D Marin-Cudraz, ...
2016 Joint International EUROSOI Workshop and International Conference on …, 2016
122016
A band-modulation device in advanced FDSOI technology: Sharp switching characteristics
H El Dirani, Y Solaro, P Fonteneau, CA Legrand, D Marin-Cudraz, ...
Solid-State Electronics 125, 103-110, 2016
112016
Sharp switching, hysteresis-free characteristics of Z2-FET for fast logic applications
KH Lee, H El Dirani, P Fonteneau, M Bawedin, S Sato, S Cristoloveanu
2018 48th European Solid-State Device Research Conference (ESSDERC), 74-77, 2018
102018
Memory cell
H El Dirani, Y Solaro, P Fonteneau
US Patent 9,905,565, 2018
72018
The mystery of the Z2-FET 1T-DRAM memory
M Bawedin, H El Dirani, K Lee, MS Parihar, J Lacord, S Martinie, ...
2017 Joint International EUROSOI Workshop and International Conference on …, 2017
32017
Inverting circuit
H El Dirani, P Fonteneau
US Patent 10,978,487, 2021
22021
Memory array comprising memory cells of Z2-FET type
H El Dirani, T Bedecarrats, P Galy
US Patent 10,804,275, 2020
12020
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