A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters S Cristoloveanu, KH Lee, MS Parihar, H El Dirani, J Lacord, S Martinie, ...
Solid-State Electronics 143, 10-19, 2018
58 2018 Extended Analysis of the -FET: Operation as Capacitorless eDRAM C Navarro, J Lacord, MS Parihar, F Adamu-Lema, M Duan, N Rodriguez, ...
IEEE Transactions on Electron Devices 64 (11), 4486-4491, 2017
45 2017 -FET as Capacitor-Less eDRAM Cell For High-Density IntegrationC Navarro, M Duan, MS Parihar, F Adamu-Lema, S Coseman, J Lacord, ...
IEEE Transactions on Electron Devices 64 (12), 4904-4909, 2017
35 2017 Experimental Demonstration of Operational Z2 -FET Memory Matrix S Navarro, C Navarro, C Marquez, H El Dirani, P Galy, M Bawedin, ...
IEEE Electron Device Letters 39 (5), 660-663, 2018
32 2018 Properties and mechanisms of Z2-FET at variable temperature H El Dirani, Y Solaro, P Fonteneau, P Ferrari, S Cristoloveanu
Solid-State Electronics 115, 201-206, 2016
29 2016 Sharp-switching Z2 -FET device in 14 nm FDSOI technology H El Dirani, Y Solaro, P Fonteneau, P Ferrari, S Cristoloveanu
2015 45th European Solid State Device Research Conference (ESSDERC), 250-253, 2015
23 2015 Sharp-switching band-modulation back-gated devices in advanced FDSOI technology H El Dirani, P Fonteneau, Y Solaro, CA Legrand, D Marin-Cudraz, ...
Solid-State Electronics 128, 180-186, 2017
22 2017 Insight into carrier lifetime impact on band-modulation devices MS Parihar, KH Lee, HJ Park, J Lacord, S Martinie, JC Barbé, Y Xu, ...
Solid-State Electronics 143, 41-48, 2018
18 2018 Low-power Z2-FET capacitorless 1T-DRAM MS Parihar, KH Lee, H El Dirani, C Navarro, J Lacord, S Martinie, ...
2017 IEEE International Memory Workshop (IMW), 1-4, 2017
18 2017 Competitive 1T-DRAM in 28 nm FDSOI technology for low-power embedded memory H El Dirani, M Bawedin, K Lee, M Parihar, X Mescot, P Fonteneau, P Galy, ...
2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2016
16 2016 Novel FDSOI band-modulation device: Z2 -FET with Dual Ground Planes H El Dirani, P Fonteneau, Y Solaro, P Ferrari, S Cristoloveanu
2016 46th European Solid-State Device Research Conference (ESSDERC), 210-213, 2016
15 2016 Ultra-low power 1T-DRAM in FDSOI technology H El Dirani, KH Lee, MS Parihar, J Lacord, S Martinie, JC Barbe, X Mescot, ...
Microelectronic Engineering 178, 245-249, 2017
14 2017 A sharp-switching gateless device (Z3-FET) in advanced FDSOI technology H El Dirani, Y Solaro, P Fonteneau, CA Legrand, D Marin-Cudraz, ...
2016 Joint International EUROSOI Workshop and International Conference on …, 2016
14 2016 Sharp logic switch based on band modulation KH Lee, H El Dirani, P Fonteneau, M Bawedin, S Cristoloveanu
IEEE Electron Device Letters 40 (11), 1852-1855, 2019
12 2019 Sharp switching, hysteresis-free characteristics of Z2 -FET for fast logic applications KH Lee, H El Dirani, P Fonteneau, M Bawedin, S Sato, S Cristoloveanu
2018 48th European Solid-State Device Research Conference (ESSDERC), 74-77, 2018
11 2018 A band-modulation device in advanced FDSOI technology: Sharp switching characteristics H El Dirani, Y Solaro, P Fonteneau, CA Legrand, D Marin-Cudraz, ...
Solid-State Electronics 125, 103-110, 2016
11 2016 Memory cell H El Dirani, Y Solaro, P Fonteneau
US Patent 9,905,565, 2018
7 2018 The mystery of the Z2 -FET 1T-DRAM memory M Bawedin, H El Dirani, K Lee, MS Parihar, J Lacord, S Martinie, ...
2017 Joint International EUROSOI Workshop and International Conference on …, 2017
3 2017 Inverting circuit H El Dirani, P Fonteneau
US Patent 10,978,487, 2021
2 2021 Memory array comprising memory cells of Z2-FET type H El Dirani, T Bedecarrats, P Galy
US Patent 10,804,275, 2020
1 2020