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Koji Watanabe
Koji Watanabe
Tokyo Electron Limited, Japan
Verified email at tel.com
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Cited by
Cited by
Year
STM study of the Ge growth mode on Si(001) substrates
M Tomitori, K Watanabe, M Kobayashi, F Iwawaki, O Nishikawa
Appl. Surf. Sci., 322-328, 1994
1821994
Intestinal flora induces the expression of Cyp3a in the mouse liver
T Toda, N Saito, N Ikarashi, K Ito, M Yamamoto, A Ishige, K Watanabe, ...
Xenobiotica 39 (4), 323-334, 2009
942009
LKM512 yogurt consumption improves the intestinal environment and induces the T‐helper type 1 cytokine in adult patients with intractable atopic dermatitis
M Matsumoto, A Aranami, A Ishige, K Watanabe, Y Benno
Clinical & experimental allergy 37 (3), 358-370, 2007
912007
A novel dry selective etch of SiGe for the enablement of high performance logic stacked gate-all-around nanosheet devices
N Loubet, S Kal, C Alix, S Pancharatnam, H Zhou, C Durfee, M Belyansky, ...
2019 IEEE International Electron Devices Meeting (IEDM), 11.4. 1-11.4. 4, 2019
632019
Full bottom dielectric isolation to enable stacked nanosheet transistor for low power and high performance applications
J Zhang, J Frougier, A Greene, X Miao, L Yu, R Vega, P Montanini, ...
2019 IEEE International Electron Devices Meeting (IEDM), 11.6. 1-11.6. 4, 2019
632019
High-resolution Transmission Electron Microscopy of an Atomic Structure at a Si(001) Oxidation Front
N Ikarashi, K Watanabe
Physical Review B 62, 15989, 2000
572000
Layered heteroepitaxial growth of germanium on Si(015) observed by scanning tunneling microscopy
M Tomitori, K Watanabe, M Kobayashi, F Iwawaki, O Nishikawa
Surface Science 301, 214-222, 1994
561994
A highly manufacturable low power and high speed HfSiO CMOS FET with dual poly-Si gate electrodes
T Iwamoto, T Ogura, M Terai, H Watanabe, H Watanabe, N Ikarashi, ...
IEEE International Electron Devices Meeting 2003, 27.5. 1-27.5. 4, 2003
362003
Quantitative gallium-67 scanning for predictive value in primary lung carcinoma
T Higashi, H Wakao, K Nakamura, A Shimura, T Yokoyama, S Suzuki, ...
Journal of Nuclear Medicine 21 (7), 628-632, 1980
361980
The influence of incorporated nitrogen on the thermal stability of amorphous HfO2 and Hf silicate
N Ikarashi, K Watanabe, K Masuzaki, T Nakagawa, M Miyamura
J. Appl. Phys. 100, 063507, 2006
282006
Electron mobility in monolayer WS2 encapsulated in hexagonal boron-nitride
Y Wang, T Sohier, K Watanabe, T Taniguchi, MJ Verstraete, E Tutuc
Applied Physics Letters 118 (10), 2021
262021
Multiple-Vt solutions in nanosheet technology for high performance and low power applications
R Bao, K Watanabe, J Zhang, J Guo, H Zhou, A Gaul, M Sankarapandian, ...
2019 IEEE International Electron Devices Meeting (IEDM), 11.2. 1-11.2. 4, 2019
252019
Effect of Nitrogen Profile and Fluorine Incorporation on Negative-Bias Temperature Instability of Ultrathin Plasma-Nitrided SiON MOSFETs
M Terai, K Watanabe, S Fujieda
IEEE TRANSACTIONS ON ELECTRON DEVICES 54, 1658-1665, 2007
252007
1.2nm HfSiON/SiON Stacked Gate Insulators for 65nm-node MISFETs
M Saitoh, N Ikarashi, H Watanabe, S Fujieda, H Watanabe, T Iwamoto, ...
International Conference on Solid State Devices and Materials, 2004
252004
Dependence of electrical properties on nitrogen profile in ultrathin oxynitride gate dielectrics formed by using oxygen and nitrogen radicals
K Watanabe
Journal of Applied Physics 90, 4701-4707, 2001
252001
Quantitative Characterization of Roughness at SiO2/Si Interfaces by Using Cross-sectional High-resolution Transmission Electron Microscopy
N Ikarashi, K Watanabe
Japan Journal of Applied Physics 39, 1278, 2000
252000
Simple water treating apparatus
K Watanabe
US Patent 3,746,174, 1973
231973
Thermal stability of a HfO2/SiO2 interface
N Ikarashi, K Watanabe, K Masuzaki, T Nakagawa
Appl. Phys. Lett. 88, 101912, 2006
222006
Low-Leakage and Highly-Reliable 1.5nm SiON Gate-Dielectric Using Radical Oxynitridation for Sub-0.1mm CMOS,
M Togo, K Watanabe, T Yamamoto, N Ikarashi, K Shiba, T Tatsumi, H Ono, ...
Symposium on VLSI Technology, 2000
212000
Controlling the concentration and position of nitrogen in ultrathin oxynitride films formed by using oxygen and nitrogen radicals
K Watanabe
Applied Physics Letters, 2940, 2000
182000
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