Comparative performance analysis of the dielectrically modulated full-gate and short-gate tunnel FET-based biosensors S Kanungo, S Chattopadhyay, PS Gupta, H Rahaman
IEEE Transactions on Electron Devices 62 (3), 994-1001, 2015
170 2015 Study and analysis of the effects of SiGe source and pocket-doped channel on sensing performance of dielectrically modulated tunnel FET-based biosensors S Kanungo, S Chattopadhyay, PS Gupta, K Sinha, H Rahaman
IEEE Transactions on Electron Devices 63 (6), 2589-2596, 2016
156 2016 Strained-Si heterostructure field effect transistors CK Maiti, LK Bera, S Chattopadhyay
Semiconductor science and technology 13 (11), 1225, 1999
148 1999 A model for capacitance reconstruction from measured lossy MOS capacitance–voltage characteristics KSK Kwa, S Chattopadhyay, ND Jankovic, SH Olsen, LS Driscoll, ...
Semiconductor science and technology 18 (2), 82, 2002
125 2002 Strained-Si heterostructure field effect devices CK Maiti, S Chattopadhyay, LK Bera
Taylor & Francis, 2007
100 2007 Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs GK Dalapati, S Chattopadhyay, KSK Kwa, SH Olsen, YL Tsang, R Agaiby, ...
IEEE Transactions on Electron Devices 53 (5), 1142-1152, 2006
95 2006 High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture SH Olsen, AG O'Neill, LS Driscoll, KSK Kwa, S Chattopadhyay, AM Waite, ...
IEEE Transactions on Electron Devices 50 (9), 1961-1969, 2003
94 2003 Chemical bath deposited (CBD) CuO thin films on n-silicon substrate for electronic and optical applications: Impact of growth time J Sultana, S Paul, A Karmakar, R Yi, GK Dalapati, S Chattopadhyay
Applied surface science 418, 380-387, 2017
84 2017 Thermal reaction of nickel and KL Pey, WK Choi, S Chattopadhyay, HB Zhao, EA Fitzgerald, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 20 (6 …, 2002
79 2002 Interfacial reactions of Ni on Si 1-x Ge x (x= 0.2, 0.3) at low temperature by rapid thermal annealing HB Zhao, KL Pey, WK Choi, S Chattopadhyay, EA Fitzgerald, ...
Journal of applied physics 92 (1), 214-217, 2002
79 2002 Synthesis and characterization of graphene from waste dry cell battery for electronic applications I Roy, G Sarkar, S Mondal, D Rana, A Bhattacharyya, NR Saha, ...
RSC advances 6 (13), 10557-10564, 2016
78 2016 Green synthesis of cadmium oxide decorated reduced graphene oxide nanocomposites and its electrical and antibacterial properties S Sadhukhan, TK Ghosh, I Roy, D Rana, A Bhattacharyya, R Saha, ...
Materials Science and Engineering: C 99, 696-709, 2019
75 2019 Physical and electrochemical characterization of reduced graphene oxide/silver nanocomposites synthesized by adopting a green approach I Roy, D Rana, G Sarkar, A Bhattacharyya, NR Saha, S Mondal, ...
RSC Advances 5 (32), 25357-25364, 2015
75 2015 Leakage current and charge trapping behavior in TiO2∕ SiO2 high-κ gate dielectric stack on 4H‐SiC substrate R Mahapatra, AK Chakraborty, N Poolamai, A Horsfall, S Chattopadhyay, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
72 2007 FT-MIR supported Electrical Impedance Spectroscopy based study of sugar adulterated honeys from different floral origin C Das, S Chakraborty, K Acharya, NK Bera, D Chattopadhyay, ...
Talanta 171, 327-334, 2017
64 2017 Study of single-and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs SH Olsen, AG O'Neill, S Chattopadhyay, LS Driscoll, KSK Kwa, DJ Norris, ...
IEEE Transactions on Electron Devices 51 (8), 1245-1253, 2004
51 2004 Clustered vacancies in ZnO: chemical aspects and consequences on physical properties S Pal, N Gogurla, A Das, SS Singha, P Kumar, D Kanjilal, A Singha, ...
Journal of Physics D: Applied Physics 51 (10), 105107, 2018
49 2018 Green synthesis of silver nanoparticles-based nanofluids and investigation of their antimicrobial activities MMR Mollick, B Bhowmick, D Maity, D Mondal, I Roy, J Sarkar, D Rana, ...
Microfluidics and nanofluidics 16, 541-551, 2014
49 2014 A semianalytical description of the hole band structure in inversion layers for the physically based modeling of pMOS transistors M De Michielis, D Esseni, YL Tsang, P Palestri, L Selmi, AG O'Neill, ...
IEEE transactions on electron devices 54 (9), 2164-2173, 2007
49 2007 Design, fabrication and characterisation of strained Si/SiGe MOS transistors SH Olsen, KSK Kwa, LS Driscoll, S Chattopadhyay, AG O'Neill
IEE Proceedings-Circuits, Devices and Systems 151 (5), 431-437, 2004
38 2004 
Anthony O'NeillNewcastle UniversityAdresse e-mail validée de ncl.ac.uk
