| The influence of AlN buffer over the polarity and the nucleation of self-organized GaN nanowires T Auzelle, B Haas, A Minj, C Bougerol, JL Rouvière, A Cros, J Colchero, ... Journal of Applied Physics 117 (24), 2015 | 62 | 2015 |
| Indium segregation in AlInN/AlN/GaN heterostructures A Minj, D Cavalcoli, A Cavallini Applied Physics Letters 97 (13), 2010 | 61 | 2010 |
| Assessment of polarity in GaN self-assembled nanowires by electrical force microscopy A Minj, A Cros, N Garro, J Colchero, T Auzelle, B Daudin Nano Letters 15 (10), 6770-6776, 2015 | 46 | 2015 |
| Impact of Charge trapping on Imprint and its Recovery in HfO2 based FeFET Y Higashi, N Ronchi, B Kaczer, K Banerjee, SRC McMitchell, ... 2019 IEEE International Electron Devices Meeting (IEDM), 15.6. 1-15.6. 4, 2019 | 35 | 2019 |
| Engineering wafer-scale epitaxial two-dimensional materials through sapphire template screening for advanced high-performance nanoelectronics Y Shi, B Groven, J Serron, X Wu, A Nalin Mehta, A Minj, S Sergeant, ... ACS nano 15 (6), 9482-9494, 2021 | 34 | 2021 |
| Epitaxial strain and thickness dependent structural, electrical and magnetic properties of La0. 67Sr0. 33MnO3 films SK Chaluvadi, F Ajejas, P Orgiani, S Lebargy, A Minj, S Flament, ... Journal of Physics D: Applied Physics 53 (37), 375005, 2020 | 28 | 2020 |
| Direct assessment of p–n junctions in single GaN nanowires by Kelvin probe force microscopy A Minj, A Cros, T Auzelle, J Pernot, B Daudin Nanotechnology 27 (38), 385202, 2016 | 25 | 2016 |
| Two-dimensional electron gas properties by current-voltage analyses of Al0. 86In0. 14N/AlN/GaN heterostructures S Pandey, B Fraboni, D Cavalcoli, A Minj, A Cavallini Applied Physics Letters 99 (1), 2011 | 23 | 2011 |
| First solar cells on exfoliated silicon foils obtained at room temperature by the SLIM-cut technique using an epoxy layer P Bellanger, A Slaoui, A Minj, R Martini, M Debucquoy, JM Serra IEEE Journal of Photovoltaics 6 (5), 1115-1122, 2016 | 22 | 2016 |
| Photoinduced Persistent Electron Accumulation and Depletion in Quantum Wells Y Chen, Y Lechaux, B Casals, B Guillet, A Minj, J Gazquez, L Méchin, ... Physical Review Letters 124 (24), 246804, 2020 | 15 | 2020 |
| Electrical properties of extended defects in III-nitrides A Minj, D Cavalcoli, GRM Popuri, A Vilalta-Clemente, P Ruterana, ... Acta Materialia 89, 290-297, 2015 | 15 | 2015 |
| Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure H Ben Ammar, A Minj, P Gamarra, C Lacam, M Tordjman, ... physica status solidi (a) 214 (4), 1600441, 2017 | 14 | 2017 |
| Interface dislocations in InxGa1–xN/GaN heterostructures QT Li, A Minj, MP Chauvat, J Chen, P Ruterana physica status solidi (a) 214 (4), 1600442, 2017 | 12 | 2017 |
| Surface properties of AlInGaN/GaN heterostructure A Minj, D Skuridina, D Cavalcoli, A Cros, P Vogt, M Kneissl, C Giesen, ... Materials Science in Semiconductor Processing 55, 26-31, 2016 | 12 | 2016 |
| Strain distribution and defect analysis in III-nitrides by dynamical AFM analysis A Minj, D Cavalcoli, A Cavallini, P Gamarra, MA di Forte Poisson Nanotechnology 24 (14), 145701, 2013 | 12 | 2013 |
| Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD P Chauhan, S Hasenöhrl, E Dobročka, MP Chauvat, A Minj, F Gucmann, ... Journal of Applied Physics 125 (10), 2019 | 11 | 2019 |
| Mobility-limiting mechanisms in polar semiconductor heterostructures S Pandey, D Cavalcoli, A Minj, B Fraboni, A Cavallini, D Skuridina, P Vogt, ... Acta materialia 60 (6-7), 3176-3180, 2012 | 10 | 2012 |
| Thermionic emission from the 2DEG assisted by image-charge-induced barrier lowering in AlInN/AlN/GaN heterostructures A Minj, D Cavalcoli, A Cavallini Nanotechnology 23 (11), 115701, 2012 | 10 | 2012 |
| Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer P Chauhan, S Hasenöhrl, A Minj, MP Chauvat, P Ruterana, J Kuzmík Applied Surface Science 502, 144086, 2020 | 9 | 2020 |
| Nanocrack-induced leakage current in AlInN/AlN/GaN A Minj, D Cavalcoli, S Pandey, B Fraboni, A Cavallini, T Brazzini, F Calle Scripta Materialia 66 (6), 327-330, 2012 | 9 | 2012 |
Daniela CavalcoliPhysics and Astronomy Dept University of BolognaVerified email at bo.infn.it
